IRF9620

Vishay Siliconix IRF9620

Part Number:
IRF9620
Manufacturer:
Vishay Siliconix
Ventron No:
2488225-IRF9620
Description:
MOSFET P-CH 200V 3.5A TO-220AB
ECAD Model:
Datasheet:
IRF9620

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Vishay Siliconix IRF9620 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF9620.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-220AB
  • Weight
    6.000006g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2011
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    40W Tc
  • Element Configuration
    Single
  • Power Dissipation
    40W
  • Turn On Delay Time
    15 ns
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    1.5Ohm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    350pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    3.5A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    22nC @ 10V
  • Rise Time
    25ns
  • Drain to Source Voltage (Vdss)
    200V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    15 ns
  • Turn-Off Delay Time
    20 ns
  • Continuous Drain Current (ID)
    3.5A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -200V
  • Input Capacitance
    350pF
  • Drain to Source Resistance
    1.5Ohm
  • Rds On Max
    1.5 Ω
  • Height
    9.01mm
  • Length
    10.41mm
  • Width
    4.7mm
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
IRF9620 Overview
A device's maximal input capacitance is 350pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 3.5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 20 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 1.5Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 15 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IRF9620 Features
a continuous drain current (ID) of 3.5A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 20 ns
single MOSFETs transistor is 1.5Ohm
a 200V drain to source voltage (Vdss)


IRF9620 Applications
There are a lot of Vishay Siliconix
IRF9620 applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IRF9620 More Descriptions
Trans MOSFET P-CH 200V 3.5A 3-Pin(3 Tab) TO-220AB
French Electronic Distributor since 1988
Product Comparison
The three parts on the right have similar specifications to IRF9620.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Surface Mount
    Transistor Element Material
    Series
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Operating Mode
    Transistor Application
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Factory Lead Time
    JESD-609 Code
    Subcategory
    Case Connection
    Lead Free
    Voltage - Rated DC
    Current Rating
    View Compare
  • IRF9620
    IRF9620
    Through Hole
    Through Hole
    TO-220-3
    3
    TO-220AB
    6.000006g
    -55°C~150°C TJ
    Tube
    2011
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    1
    40W Tc
    Single
    40W
    15 ns
    P-Channel
    1.5Ohm @ 1.5A, 10V
    4V @ 250μA
    350pF @ 25V
    3.5A Tc
    22nC @ 10V
    25ns
    200V
    10V
    ±20V
    15 ns
    20 ns
    3.5A
    20V
    -200V
    350pF
    1.5Ohm
    1.5 Ω
    9.01mm
    10.41mm
    4.7mm
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF9410
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    -
    -55°C~150°C TJ
    Tube
    1997
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    1
    -
    2.5W Ta
    -
    -
    -
    N-Channel
    30m Ω @ 7A, 10V
    1V @ 250μA
    550pF @ 25V
    7A Ta
    27nC @ 10V
    -
    30V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    YES
    SILICON
    HEXFET®
    8
    EAR99
    NOT SPECIFIED
    HIGH RELIABILITY
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-G8
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    SWITCHING
    MS-012AA
    7A
    0.03Ohm
    37A
    30V
    70 mJ
    -
    -
    -
    -
    -
    -
    -
  • IRF9383MTRPBF
    Surface Mount
    Surface Mount
    DirectFET™ Isometric MX
    7
    -
    -
    -40°C~150°C TJ
    Tape & Reel (TR)
    2011
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    1
    -
    2.1W Ta 113W Tc
    -
    2.1W
    29 ns
    P-Channel
    2.9m Ω @ 22A, 10V
    2.4V @ 150μA
    7305pF @ 15V
    22A Ta 160A Tc
    130nC @ 10V
    160ns
    30V
    4.5V 10V
    ±20V
    110 ns
    115 ns
    22A
    20V
    -30V
    -
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    -
    SILICON
    HEXFET®
    3
    EAR99
    Matte Tin (Sn)
    -
    BOTTOM
    -
    -
    -
    R-XBCC-N3
    -
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    SWITCHING
    -
    -
    0.0029Ohm
    -
    -
    -
    12 Weeks
    e3
    Other Transistors
    DRAIN
    Lead Free
    -
    -
  • IRF9510S
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    D2PAK
    1.437803g
    -55°C~175°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    MOSFET (Metal Oxide)
    -
    1
    3.7W Ta 43W Tc
    Single
    43W
    10 ns
    P-Channel
    1.2Ohm @ 2.4A, 10V
    4V @ 250μA
    200pF @ 25V
    4A Tc
    8.7nC @ 10V
    27ns
    100V
    10V
    ±20V
    17 ns
    15 ns
    4A
    20V
    -100V
    200pF
    1.2Ohm
    1.2 Ω
    4.83mm
    10.41mm
    9.65mm
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Contains Lead
    -100V
    -4A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • 20 October 2023

    TNY268PN Switcher: Symbol, Features, Manufacturer and Applications

    Ⅰ. Overview of TNY268PN switcherⅡ. TNY268PN symbol, footprint and pin configurationⅢ. Technical parameters of TNY268PN switcherⅣ. What are the features of TNY268PN switcher?Ⅴ. Manufacturer of TNY268PN switcherⅥ. What...
  • 20 October 2023

    A Comprehensive Introduction to MJE2955T Transistor

    Ⅰ. Overview of MJE2955T transistorⅡ. Symbol, footprint and pin configuration of MJE2955T transistorⅢ. Technical parameters of MJE2955T transistorⅣ. Features of MJE2955T transistorⅤ. Working principle of MJE2955T transistorⅥ. Absolute...
  • 23 October 2023

    UA741CP Operational Amplifier: Symbol, Equivalent, Dimensions and Applications

    Ⅰ. What is UA741CP operational amplifier?Ⅱ. Symbol and footprint of UA741CP operational amplifierⅢ. Technical parameters of UA741CP operational amplifierⅣ. What are the features of UA741CP operational amplifier?Ⅴ. Dimensions...
  • 23 October 2023

    A Basic Overview of SN74LS00N NAND Gates

    Ⅰ. What are logic gates and NAND gates?Ⅱ. Overview of SN74LS00N NAND gatesⅢ. Symbol and footprint of SN74LS00N NAND gatesⅣ. Technical parameters of SN74LS00N NAND gatesⅤ. Features of...
  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.