STMicroelectronics IRF820

Name: IRF820
Brand: STMicroelectronics
SKU: 2488463-IRF820
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF820

Manufacturer:: STMicroelectronics

Ventron No:: 2488463-IRF820

Description:: MOSFET N-CH 500V 4A TO-220

ECAD Model:

Datasheet:: IRF820

Specifications

STMicroelectronics IRF820 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics IRF820.

Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Reach Compliance Code
unknown
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
50W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
360pF @ 25V
Current - Continuous Drain (Id) @ 25°C
2.5A Tc
Gate Charge (Qg) (Max) @ Vgs
24nC @ 10V
Drain to Source Voltage (Vdss)
500V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
JEDEC-95 Code
TO-220AB
Drain Current-Max (Abs) (ID)
2.5A
Drain-source On Resistance-Max
3Ohm
Pulsed Drain Current-Max (IDM)
8A
DS Breakdown Voltage-Min
500V
RoHS Status
Non-RoHS Compliant

Description

IRF820 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 360pF @ 25V.2.5A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 8A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 500V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.

IRF820 Features
based on its rated peak drain current 8A.
a 500V drain to source voltage (Vdss)

IRF820 Applications
There are a lot of Rochester Electronics, LLC
IRF820 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

Product Comparison

The three parts on the right have similar specifications to IRF820.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Technology

Terminal Position

Reach Compliance Code

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

RoHS Status

Mount

Number of Pins

Supplier Device Package

Weight

Packaging

Published

Max Operating Temperature

Min Operating Temperature

Number of Channels

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Input Capacitance

Drain to Source Resistance

Rds On Max

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

Voltage - Rated DC

Current Rating

Drain to Source Breakdown Voltage

Lead Free

Vgs(th) (Max) @ Id:

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

View Compare
IRF820

STMicroelectronics

Through Hole

TO-220-3

NO

SILICON

-55°C~150°C TJ

Obsolete

1 (Unlimited)

3

MOSFET (Metal Oxide)

SINGLE

unknown

R-PSFM-T3

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

50W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

3 Ω @ 1.5A, 10V

4V @ 250μA

360pF @ 25V

2.5A Tc

24nC @ 10V

500V

10V

±20V

TO-220AB

2.5A

3Ohm

8A

500V

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF820A

Vishay Siliconix

Through Hole

TO-220-3

-

-

-55°C~150°C TJ

Obsolete

1 (Unlimited)

-

MOSFET (Metal Oxide)

-

-

-

-

1

-

50W Tc

-

-

N-Channel

-

3Ohm @ 1.5A, 10V

4.5V @ 250μA

340pF @ 25V

2.5A Tc

17nC @ 10V

500V

10V

±30V

-

-

-

-

-

Non-RoHS Compliant

Through Hole

3

TO-220AB

6.000006g

Tube

2011

150°C

-55°C

1

Single

50W

8.1 ns

12ns

13 ns

16 ns

2.5A

4.5V

30V

340pF

3Ohm

3 Ω

4.5 V

9.01mm

10.41mm

4.7mm

Unknown

No

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF820 vs IRF820A
IRF840L

Vishay Siliconix

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-55°C~150°C TJ

Obsolete

1 (Unlimited)

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

125W Tc

-

-

N-Channel

-

850mOhm @ 4.8A, 10V

4V @ 250μA

1300pF @ 25V

8A Tc

63nC @ 10V

500V

10V

±20V

-

-

-

-

-

Non-RoHS Compliant

Through Hole

3

I2PAK

6.000006g

Tube

2016

150°C

-55°C

1

Single

-

14 ns

23ns

20 ns

49 ns

8A

-

20V

1.3nF

850mOhm

850 mΩ

-

9.01mm

10.41mm

4.7mm

-

-

500V

8A

500V

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF820 vs IRF840L
IRF820

Vishay Siliconix

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4V @ 250µA

MOSFET (Metal Oxide)

TO-220AB

-

3 Ohm @ 1.5A, 10V

50W (Tc)

Tube

TO-220-3

-55°C ~ 150°C (TJ)

Through Hole

360pF @ 25V

24nC @ 10V

N-Channel

-

500V

2.5A (Tc)

-