Infineon Technologies IRF7351TRPBF
- Part Number:
- IRF7351TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3813544-IRF7351TRPBF
- Description:
- MOSFET 2N-CH 60V 8A 8-SOIC
- ECAD Model:
-
- Datasheet:
- IRF7351TRPBF
Infineon Technologies IRF7351TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7351TRPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2009
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- Max Power Dissipation2W
- Terminal FormGULL WING
- Base Part NumberIRF7351PBF
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- Turn On Delay Time5.1 ns
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs17.8m Ω @ 8A, 10V
- Vgs(th) (Max) @ Id4V @ 50μA
- Input Capacitance (Ciss) (Max) @ Vds1330pF @ 30V
- Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
- Rise Time5.9ns
- Drain to Source Voltage (Vdss)60V
- Fall Time (Typ)6.7 ns
- Turn-Off Delay Time17 ns
- Continuous Drain Current (ID)8A
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)8A
- Drain to Source Breakdown Voltage60V
- Pulsed Drain Current-Max (IDM)64A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Height1.4986mm
- Length4.9784mm
- Width3.9878mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF7351TRPBF Overview
This product is manufactured by Infineon Technologies and belongs to the category of obsolete (EOL) components. The images we provide are for reference only, for detailed product information please see specification sheet IRF7351TRPBF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IRF7351TRPBF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Infineon Technologies and belongs to the category of obsolete (EOL) components. The images we provide are for reference only, for detailed product information please see specification sheet IRF7351TRPBF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IRF7351TRPBF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IRF7351TRPBF More Descriptions
Dual N-Channel 60 V 17.8 mOhm 36 nC HEXFET® Power Mosfet - SOIC-8
Transistor MOSFET Array Dual N-CH 60V 8A 8-Pin SOIC T/R
N CHANNEL MOSFET, 60V, 8A, SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current, Id:8A; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):0.0178ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes
Power Field-Effect Transistor, 8A I(D), 60V, 0.0178ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Compatible with Existing Surface Mount Techniques; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Dual N-Channel MOSFET
MOSFET, DUAL N CH, 60V, 8A, SOIC-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0137ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Transistor MOSFET Array Dual N-CH 60V 8A 8-Pin SOIC T/R
N CHANNEL MOSFET, 60V, 8A, SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current, Id:8A; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):0.0178ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes
Power Field-Effect Transistor, 8A I(D), 60V, 0.0178ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Compatible with Existing Surface Mount Techniques; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Dual N-Channel MOSFET
MOSFET, DUAL N CH, 60V, 8A, SOIC-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0137ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
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