Infineon Technologies IRF3710ZLPBF
- Part Number:
- IRF3710ZLPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2483599-IRF3710ZLPBF
- Description:
- MOSFET N-CH 100V 59A TO-262
- Datasheet:
- IRF3710Z(S,L)PbF
Infineon Technologies IRF3710ZLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF3710ZLPBF.
- Factory Lead Time15 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2003
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- SubcategoryFET General Purpose Power
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)260
- Current Rating59A
- Time@Peak Reflow Temperature-Max (s)30
- Number of Elements1
- Power Dissipation-Max160W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation160W
- Case ConnectionDRAIN
- Turn On Delay Time17 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs18m Ω @ 35A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2900pF @ 25V
- Current - Continuous Drain (Id) @ 25°C59A Tc
- Gate Charge (Qg) (Max) @ Vgs120nC @ 10V
- Rise Time77ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)56 ns
- Turn-Off Delay Time41 ns
- Continuous Drain Current (ID)59A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Pulsed Drain Current-Max (IDM)240A
- Avalanche Energy Rating (Eas)200 mJ
- Nominal Vgs4 V
- Height9.65mm
- Length10.668mm
- Width4.826mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF3710ZLPBF Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 200 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2900pF @ 25V.This device has a continuous drain current (ID) of [59A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 41 ns.A maximum pulsed drain current of 240A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 17 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).
IRF3710ZLPBF Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 59A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 41 ns
based on its rated peak drain current 240A.
IRF3710ZLPBF Applications
There are a lot of Infineon Technologies
IRF3710ZLPBF applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 200 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2900pF @ 25V.This device has a continuous drain current (ID) of [59A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 41 ns.A maximum pulsed drain current of 240A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 17 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).
IRF3710ZLPBF Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 59A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 41 ns
based on its rated peak drain current 240A.
IRF3710ZLPBF Applications
There are a lot of Infineon Technologies
IRF3710ZLPBF applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRF3710ZLPBF More Descriptions
Single N-Channel 100 V 18 mOhm 120 nC HEXFET® Power Mosfet - TO-262
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHSInfineon SCT
Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:59A; On Resistance, Rds(on):18mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHSInfineon SCT
Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:59A; On Resistance, Rds(on):18mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
The three parts on the right have similar specifications to IRF3710ZLPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Number of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeDrain to Source Voltage (Vdss)Supplier Device PackageView Compare
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IRF3710ZLPBF15 WeeksThrough HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3SILICON-55°C~175°C TJTubeHEXFET®2003e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCEFET General Purpose Power100VMOSFET (Metal Oxide)26059A301160W TcSingleENHANCEMENT MODE160WDRAIN17 nsN-ChannelSWITCHING18m Ω @ 35A, 10V4V @ 250μA2900pF @ 25V59A Tc120nC @ 10V77ns10V±20V56 ns41 ns59A20V100V240A200 mJ4 V9.65mm10.668mm4.826mmNo SVHCNoROHS3 CompliantLead Free---
-
--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---Cut Tape (CT)HEXFET®2004-Obsolete1 (Unlimited)------MOSFET (Metal Oxide)----------N-Channel-45m Ω @ 25A, 10V4.5V @ 250μA2260pF @ 25V41A Tc107nC @ 10V------------------150V-
-
--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®2000-Obsolete1 (Unlimited)------MOSFET (Metal Oxide)----87W Tc-----N-Channel-9mOhm @ 15A, 10V3V @ 250μA1996pF @ 10V77A Tc19nC @ 4.5V-4.5V 10V±20V-------------Non-RoHS Compliant-20VD2PAK
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--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTubeHEXFET®2000-Obsolete1 (Unlimited)-EAR99----MOSFET (Metal Oxide)----87W Tc-----N-Channel-12.5m Ω @ 15A, 10V3V @ 250μA1990pF @ 15V62A Tc19nC @ 4.5V-4.5V 10V±20V-------------Non-RoHS Compliant-30V-
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