IRF3710STRR

Infineon Technologies IRF3710STRR

Part Number:
IRF3710STRR
Manufacturer:
Infineon Technologies
Ventron No:
2853664-IRF3710STRR
Description:
MOSFET N-CH 100V 57A D2PAK
ECAD Model:
Datasheet:
IRF3710STRR

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Infineon Technologies IRF3710STRR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF3710STRR.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2005
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    200W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    23m Ω @ 28A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3130pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    57A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    130nC @ 10V
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Drain Current-Max (Abs) (ID)
    57A
  • Drain-source On Resistance-Max
    0.023Ohm
  • Pulsed Drain Current-Max (IDM)
    180A
  • DS Breakdown Voltage-Min
    100V
  • Avalanche Energy Rating (Eas)
    280 mJ
  • RoHS Status
    Non-RoHS Compliant
Description
IRF3710STRR Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 280 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3130pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [57A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 180A.The DS breakdown voltage should be maintained above 100V to maintain normal operation.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IRF3710STRR Features
the avalanche energy rating (Eas) is 280 mJ
based on its rated peak drain current 180A.
a 100V drain to source voltage (Vdss)


IRF3710STRR Applications
There are a lot of Infineon Technologies
IRF3710STRR applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IRF3710STRR More Descriptions
Trans MOSFET N-CH 100V 57A 3-Pin(2 Tab) D2PAK T/R
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
CAP CER 1UF 16V X5R 0805
OEMs, CMs ONLY (NO BROKERS)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • 20 October 2023

    TNY268PN Switcher: Symbol, Features, Manufacturer and Applications

    Ⅰ. Overview of TNY268PN switcherⅡ. TNY268PN symbol, footprint and pin configurationⅢ. Technical parameters of TNY268PN switcherⅣ. What are the features of TNY268PN switcher?Ⅴ. Manufacturer of TNY268PN switcherⅥ. What...
  • 20 October 2023

    A Comprehensive Introduction to MJE2955T Transistor

    Ⅰ. Overview of MJE2955T transistorⅡ. Symbol, footprint and pin configuration of MJE2955T transistorⅢ. Technical parameters of MJE2955T transistorⅣ. Features of MJE2955T transistorⅤ. Working principle of MJE2955T transistorⅥ. Absolute...
  • 23 October 2023

    UA741CP Operational Amplifier: Symbol, Equivalent, Dimensions and Applications

    Ⅰ. What is UA741CP operational amplifier?Ⅱ. Symbol and footprint of UA741CP operational amplifierⅢ. Technical parameters of UA741CP operational amplifierⅣ. What are the features of UA741CP operational amplifier?Ⅴ. Dimensions...
  • 23 October 2023

    A Basic Overview of SN74LS00N NAND Gates

    Ⅰ. What are logic gates and NAND gates?Ⅱ. Overview of SN74LS00N NAND gatesⅢ. Symbol and footprint of SN74LS00N NAND gatesⅣ. Technical parameters of SN74LS00N NAND gatesⅤ. Features of...
  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.