IR IRF3710STRLPBF

Part Number:: IRF3710STRLPBF

Manufacturer:: IR

Ventron No:: 6226835-IRF3710STRLPBF

Description:

ECAD Model:

Datasheet:: IRF3710STRLPBF

Specifications

IR IRF3710STRLPBF technical specifications, attributes, parameters and parts with similar specifications to IR IRF3710STRLPBF.

Vgs(th) (Max) @ Id:
4V @ 250µA
Vgs (Max):
±20V
Technology:
MOSFET (Metal Oxide)
Supplier Device Package:
D2PAK
Series:
HEXFET®
Rds On (Max) @ Id, Vgs:
23 mOhm @ 28A, 10V
Power Dissipation (Max):
200W (Tc)
Packaging:
Cut Tape (CT)
Package / Case:
TO-263-3, D²Pak (2 Leads Tab), TO-263AB
Other Names:
IRF3710STRLPBFCT
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:
3130pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
130nC @ 10V
FET Type:
N-Channel
FET Feature:
-
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
100V
Detailed Description:
N-Channel 100V 57A (Tc) 200W (Tc) Surface Mount D2PAK
Current - Continuous Drain (Id) @ 25°C:
57A (Tc)

Description

The IRF3710STRLPBF is , it is part of HEXFET® series. they are designed to work as Housingless Welding Diode.IRF3710STRLPBF with pin details manufactured by . The IRF3710STRLPBF is available in D2PAK Package,it is part of the electronic component Chips.that includes HEXFET® Series. they are designed to operate as Housingless Welding Diode.it is with Operating Temperature -55°C ~ 175°C (TJ).IRF3710STRLPBF with original stock manufactured by . The IRF3710STRLPBF is available in D2PAK Package.Generally IC chips offer Mounting Style features such as SMD/SMT, Package Case of IRF3710STRLPBFis designed to work in TO-263-3, D²Pak (2 Leads Tab), TO-263AB, it's Operating Temperature is -55°C ~ 175°C (TJ).The IRF3710STRLPBF is available in TO-263-3, D²Pak (2 Leads Tab), TO-263AB Package, is part of the Housingless Welding Diode and belong to RF Semiconductors.IRF3710STRLPBF with EDA / CAD Models manufactured by . The IRF3710STRLPBF is available in D2PAKPackage, is part of the RF Semiconductors.The IRF3710STRLPBF is Housingless Welding Diode with package TO-263-3, D²Pak (2 Leads Tab), TO-263AB manufactured by . The IRF3710STRLPBF is available in D2PAK Package, is part of the .

IRF3710STRLPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 23Milliohms;ID 57A;D2Pak;PD 200W;VGS /-20
Single N-Channel 100V 23 mOhm 130 nC HEXFET® Power Mosfet - D2PAK
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Trans MOSFET N-CH Si 100V 57A 3-Pin(2 Tab) D2PAK T/R
Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:100V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:57A; Package / Case:D2-PAK; Power Dissipation Pd:200W; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 57 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 23 / Gate-Source Voltage V = 20 / Fall Time ns = 47 / Rise Time ns = 58 / Turn-OFF Delay Time ns = 45 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 200

Certification