IRF3710STRLPBF
- Part Number:
- IRF3710STRLPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2482843-IRF3710STRLPBF
- Description:
- MOSFET N-CH 100V 57A D2PAK
- Datasheet:
- IRF3710STRLPBF
Infineon Technologies IRF3710STRLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF3710STRLPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2009
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance23MOhm
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
- SubcategoryFET General Purpose Power
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating57A
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max200W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation200W
- Case ConnectionDRAIN
- Turn On Delay Time12 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs23m Ω @ 28A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3130pF @ 25V
- Current - Continuous Drain (Id) @ 25°C57A Tc
- Gate Charge (Qg) (Max) @ Vgs130nC @ 10V
- Rise Time58ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)47 ns
- Turn-Off Delay Time45 ns
- Continuous Drain Current (ID)57A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Dual Supply Voltage100V
- Avalanche Energy Rating (Eas)280 mJ
- Recovery Time220 ns
- Nominal Vgs4 V
- Height4.826mm
- Length10.668mm
- Width9.65mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead, Lead Free
- Description
- FAQs
- Shipping
IRF3710STRLPBF MOSFET Description
Advanced processing techniques create extraordinarily low on-resistance per silicon area in the IRF3710 57A 100V N-Channel Power MOSFET. This advantage, when paired with the high switching speed and ruggedized device architecture of HEXFET power MOSFETs, offers the designer a very efficient and dependable device for usage in many applications. At power dissipation levels of up to 50 watts, the TO-220 package is universally recommended for all commercial-industrial applications. The TO-220's low heat resistance and packaging cost contribute to its widespread use in the industry.
IRF3710STRLPBF MOSFET Features
Fast Switching 175°C Operating Temperature Fully Avalanche Rated Dynamic dv/dt Rating Ultra-Low On-Resistance Lead-Free
IRF3710STRLPBF MOSFET Applications
Low-profile applications Chopper Circuits Tone Control Audio Signals Modulation Switching Application Low Noise Applications Noise Generators
Advanced processing techniques create extraordinarily low on-resistance per silicon area in the IRF3710 57A 100V N-Channel Power MOSFET. This advantage, when paired with the high switching speed and ruggedized device architecture of HEXFET power MOSFETs, offers the designer a very efficient and dependable device for usage in many applications. At power dissipation levels of up to 50 watts, the TO-220 package is universally recommended for all commercial-industrial applications. The TO-220's low heat resistance and packaging cost contribute to its widespread use in the industry.
IRF3710STRLPBF MOSFET Features
Fast Switching 175°C Operating Temperature Fully Avalanche Rated Dynamic dv/dt Rating Ultra-Low On-Resistance Lead-Free
IRF3710STRLPBF MOSFET Applications
Low-profile applications Chopper Circuits Tone Control Audio Signals Modulation Switching Application Low Noise Applications Noise Generators
IRF3710STRLPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 23Milliohms;ID 57A;D2Pak;PD 200W;VGS /-20
Single N-Channel 100V 23 mOhm 130 nC HEXFET® Power Mosfet - D2PAK
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Trans MOSFET N-CH Si 100V 57A 3-Pin(2 Tab) D2PAK T/R
Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:100V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:57A; Package / Case:D2-PAK; Power Dissipation Pd:200W; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 57 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 23 / Gate-Source Voltage V = 20 / Fall Time ns = 47 / Rise Time ns = 58 / Turn-OFF Delay Time ns = 45 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 200
Single N-Channel 100V 23 mOhm 130 nC HEXFET® Power Mosfet - D2PAK
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Trans MOSFET N-CH Si 100V 57A 3-Pin(2 Tab) D2PAK T/R
Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:100V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:57A; Package / Case:D2-PAK; Power Dissipation Pd:200W; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 57 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 23 / Gate-Source Voltage V = 20 / Fall Time ns = 47 / Rise Time ns = 58 / Turn-OFF Delay Time ns = 45 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 200
The three parts on the right have similar specifications to IRF3710STRLPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageAvalanche Energy Rating (Eas)Recovery TimeNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeDrain to Source Voltage (Vdss)Supplier Device PackageView Compare
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IRF3710STRLPBF12 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~175°C TJTape & Reel (TR)HEXFET®2009e3Active1 (Unlimited)2SMD/SMTEAR9923MOhmMatte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCEFET General Purpose Power100VMOSFET (Metal Oxide)GULL WING26057A30R-PSSO-G21200W TcSingleENHANCEMENT MODE200WDRAIN12 nsN-ChannelSWITCHING23m Ω @ 28A, 10V4V @ 250μA3130pF @ 25V57A Tc130nC @ 10V58ns10V±20V47 ns45 ns57A4V20V100V100V280 mJ220 ns4 V4.826mm10.668mm9.65mmNo SVHCNoROHS3 CompliantContains Lead, Lead Free---
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--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---Cut Tape (CT)HEXFET®2004-Obsolete1 (Unlimited)--------MOSFET (Metal Oxide)------------N-Channel-45m Ω @ 25A, 10V4.5V @ 250μA2260pF @ 25V41A Tc107nC @ 10V--------------------150V-
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--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®2004-Obsolete1 (Unlimited)--------MOSFET (Metal Oxide)------88W Tc-----N-Channel-8.5m Ω @ 15A, 10V2V @ 250μA2410pF @ 10V77A Tc35nC @ 4.5V-2.8V 10V±12V---------------Non-RoHS Compliant-20V-
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--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®2000-Obsolete1 (Unlimited)--------MOSFET (Metal Oxide)------87W Tc-----N-Channel-9mOhm @ 15A, 10V3V @ 250μA1996pF @ 10V77A Tc19nC @ 4.5V-4.5V 10V±20V---------------Non-RoHS Compliant-20VD2PAK
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