Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRF3710SPBF
IRF3710SPBF

Infineon Technologies IRF3710SPBF

Part Number:
IRF3710SPBF
Manufacturer:
Infineon Technologies
Ventron No:
3813684-IRF3710SPBF
Description:
MOSFET N-CH 100V 57A D2PAK
ECAD Model:
Datasheet:
IRF3710SPBF

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Infineon Technologies IRF3710SPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF3710SPBF.
  • Factory Lead Time
    52 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2005
  • JESD-609 Code
    e3
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    200W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    23m Ω @ 28A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3130pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    57A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    130nC @ 10V
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Drain Current-Max (Abs) (ID)
    57A
  • Drain-source On Resistance-Max
    0.023Ohm
  • Pulsed Drain Current-Max (IDM)
    180A
  • DS Breakdown Voltage-Min
    100V
  • Avalanche Energy Rating (Eas)
    280 mJ
  • RoHS Status
    ROHS3 Compliant
Description
IRF3710SPBF Description
The IRF3710SPBF from International Rectifier is a 100V single N channel HEXFET power MOSFET in the D2-PAK package. This IRF3710SPBF MOSFET features extremely low on-resistance per silicon area, rugged, fast switching, and fully avalanche rated. As a result, The IRF3710SPBF is well known to provide extreme efficiency and reliability which can be used in a wide variety of applications.

IRF3710SPBF Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free

IRF3710SPBF Applications
Power Management
Industria 
Portable Devices
Consumer Electronics
IRF3710SPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 23Milliohms;ID 57A;D2Pak;PD 200W;VGS /-20
Single N-Channel 100 V 23 mOhm 130 nC HEXFET® Power Mosfet - D2PAK
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Trans MOSFET N-CH Si 100V 57A 3-Pin(2 Tab) D2PAK Tube
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 38 W
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 100V, 57A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:46A; Drain Source Voltage Vds:100V; On Resistance Rds(on):28mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:57A; Current Temperature:25°C; External Depth:15.49mm; External Length / Height:4.69mm; External Width:10.54mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; No. of Transistors:1; Package / Case:D2-PAK; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Power Dissipation on 1 Sq. PCB:3.7W; Pulse Current Idm:180A; SMD Marking:IRF3601S; Termination Type:SMD; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Product Comparison
The three parts on the right have similar specifications to IRF3710SPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Mount
    Number of Pins
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Element Configuration
    Power Dissipation
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Voltage - Rated DC
    Current Rating
    Lead Free
    View Compare
  • IRF3710SPBF
    IRF3710SPBF
    Infineon Technologies
    52 Weeks
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    YES
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2005
    e3
    Discontinued
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    260
    not_compliant
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    200W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    23m Ω @ 28A, 10V
    4V @ 250μA
    3130pF @ 25V
    57A Tc
    130nC @ 10V
    100V
    10V
    ±20V
    57A
    0.023Ohm
    180A
    100V
    280 mJ
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF3706STRLPBF
    IRF3706STRLPBF
    Infineon Technologies
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    88W Tc
    -
    -
    N-Channel
    -
    8.5mOhm @ 15A, 10V
    2V @ 250μA
    2410pF @ 10V
    77A Tc
    35nC @ 4.5V
    20V
    2.8V 10V
    ±12V
    -
    -
    -
    -
    -
    RoHS Compliant
    Surface Mount
    3
    D2PAK
    175°C
    -55°C
    Single
    88W
    87ns
    4.8 ns
    17 ns
    77A
    12V
    20V
    2.41nF
    10.5mOhm
    8.5 mΩ
    -
    -
    -
    IRF3710SPBF vs IRF3706STRLPBF
  • IRF3704STRLPBF
    IRF3704STRLPBF
    Infineon Technologies
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    1
    -
    87W Tc
    -
    -
    N-Channel
    -
    9mOhm @ 15A, 10V
    3V @ 250μA
    1996pF @ 10V
    77A Tc
    19nC @ 4.5V
    20V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    RoHS Compliant
    Surface Mount
    3
    D2PAK
    175°C
    -55°C
    -
    90W
    98ns
    -
    -
    77A
    20V
    20V
    1.996nF
    13.5mOhm
    9 mΩ
    20V
    77A
    Lead Free
    IRF3710SPBF vs IRF3704STRLPBF
  • IRF3707S
    IRF3707S
    Infineon Technologies
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2000
    -
    Obsolete
    1 (Unlimited)
    -
    EAR99
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    87W Tc
    -
    -
    N-Channel
    -
    12.5m Ω @ 15A, 10V
    3V @ 250μA
    1990pF @ 15V
    62A Tc
    19nC @ 4.5V
    30V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRF3710SPBF vs IRF3707S
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Related parts for IRF3710SPBF
Popular Search Part Number Related Keywords Search Tags

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.