Infineon Technologies IRF3710L

Name: IRF3710L
Brand: Infineon Technologies
SKU: 2492493-IRF3710L
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF3710L

Manufacturer:: Infineon Technologies

Ventron No:: 2492493-IRF3710L

Description:: MOSFET N-CH 100V 57A TO-262

ECAD Model:

Datasheet:: IRF3710L

Specifications

Infineon Technologies IRF3710L technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF3710L.

Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2007
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
HTS Code
8541.29.00.95
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
225
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSIP-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
200W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
23m Ω @ 28A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3130pF @ 25V
Current - Continuous Drain (Id) @ 25°C
57A Tc
Gate Charge (Qg) (Max) @ Vgs
130nC @ 10V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
57A
Drain-source On Resistance-Max
0.023Ohm
Pulsed Drain Current-Max (IDM)
180A
DS Breakdown Voltage-Min
100V
Avalanche Energy Rating (Eas)
280 mJ
RoHS Status
Non-RoHS Compliant

Description

IRF3710L Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 280 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3130pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 57A.Peak drain current is 180A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 100V.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IRF3710L Features
the avalanche energy rating (Eas) is 280 mJ
based on its rated peak drain current 180A.
a 100V drain to source voltage (Vdss)

IRF3710L Applications
There are a lot of Infineon Technologies
IRF3710L applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

Product Comparison

The three parts on the right have similar specifications to IRF3710L.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Mount

Number of Pins

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Element Configuration

Power Dissipation

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Voltage - Rated DC

Current Rating

Lead Free

View Compare
IRF3710L

Infineon Technologies

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

NO

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2007

e0

Obsolete

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

8541.29.00.95

MOSFET (Metal Oxide)

SINGLE

225

30

R-PSIP-T3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

200W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

23m Ω @ 28A, 10V

4V @ 250μA

3130pF @ 25V

57A Tc

130nC @ 10V

100V

10V

±20V

57A

0.023Ohm

180A

100V

280 mJ

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF3706STRLPBF

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

88W Tc

-

-

N-Channel

-

8.5mOhm @ 15A, 10V

2V @ 250μA

2410pF @ 10V

77A Tc

35nC @ 4.5V

20V

2.8V 10V

±12V

-

-

-

-

-

RoHS Compliant

Surface Mount

3

D2PAK

175°C

-55°C

Single

88W

87ns

4.8 ns

17 ns

77A

12V

20V

2.41nF

10.5mOhm

8.5 mΩ

-

-

-

IRF3710L vs IRF3706STRLPBF
IRF3704STRLPBF

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

1

-

87W Tc

-

-

N-Channel

-

9mOhm @ 15A, 10V

3V @ 250μA

1996pF @ 10V

77A Tc

19nC @ 4.5V

20V

4.5V 10V

±20V

-

-

-

-

-

RoHS Compliant

Surface Mount

3

D2PAK

175°C

-55°C

-

90W

98ns

-

-

77A

20V

20V

1.996nF

13.5mOhm

9 mΩ

20V

77A

Lead Free

IRF3710L vs IRF3704STRLPBF
IRF3707S

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tube

HEXFET®

2000

-

Obsolete

1 (Unlimited)

-

EAR99

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

87W Tc

-

-

N-Channel

-

12.5m Ω @ 15A, 10V

3V @ 250μA

1990pF @ 15V

62A Tc

19nC @ 4.5V

30V

4.5V 10V

±20V

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF3710L vs IRF3707S

Certification

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Part Number	Manufacturers	Description	Stock	Price
IRF3710LPBF DISTI #V99:2348_13890156	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 57A 3-Pin(3 Tab) TO-262 RoHS: Compliant	1000	1 $2.0153 10 $1.5407 100 $1.2274 500 $1.067 1000 $0.8792
IRF3710LPBF DISTI #V36:1790_13890156	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 57A 3-Pin(3 Tab) TO-262 RoHS: Compliant	0
IRF3710L DISTI #IRF3710L-ND	Infineon Technologies AG	MOSFET N-CH 100V 57A TO-262 RoHS: Not Compliant	0
IRF3710LPBF DISTI #IRF3710LPBF-ND	Infineon Technologies AG	MOSFET N-CH 100V 57A TO-262 RoHS: Compliant	0	1000 $0.95918
IRF3710LPBF DISTI #31025093	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 57A 3-Pin(3 Tab) TO-262 RoHS: Compliant	1000	9 $2.1664 10 $1.6563 100 $1.3195 500 $1.147 1000 $0.9451
IRF3710LPBF DISTI #IRF3710LPBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 57A 3-Pin(3 Tab) TO-262 - B	0	715 $0.5099 1430 $0.4899 2145 $0.4709 3575 $0.4529 7150 $0.4449
IRF3710LPBF DISTI #IRF3710LPBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 57A 3-Pin(3 Tab) TO-262 - R RoHS: Compliant	0	1000 $0.7259 2000 $0.6999 4000 $0.6739 6000 $0.6519 10000 $0.6399
IRF3710LPBF DISTI #57AC2281	Infineon Technologies AG	MOSFET, N-CH, 100V, 57A, TO-262, Transistor Polar	1884	1 $1.87 10 $1.59 100 $1.27 500 $1.11 1000 $0.923
IRF3710LPBF DISTI #70018207	Infineon Technologies AG	IRF3710LPBF N-channel MOSFET Module, 57A, 100 V, RoHS: Compliant	0	5 $1.42
IRF3710LPBF DISTI #942-IRF3710LPBF	Infineon Technologies AG	MOSFET MOSFT 100V 57A 23mOhm 86.7nC RoHS: Compliant	113	1 $1.85 10 $1.57 100 $1.26 500 $1.1 1000 $0.914
IRF3710LPBF DISTI #	International Rectifier	Power Field-Effect Transistor, 57A I(D), 100V, 0.0 RoHS: Compliant	46	1 $0.57 25 $0.53 100 $0.51 500 $0.49 1000 $0.46
IRF3710LPBF DISTI #8655752P	Infineon Technologies AG	MOSFET N-CH 100V 57A HEXFET TO-262, TU	155	100 $0.9 250 $0.846 500 $0.794 1000 $0.654
IRF3710LPBF DISTI #IRF3710LPBF	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 100V, 57A, 200	37	1 $1.61 3 $1.47 10 $1.19 100 $1.03
IRF3710LPBF DISTI #	International Rectifier	RoHS: Compliant	150
IRF3710LPBF DISTI #2860248	Infineon Technologies AG	MOSFET, N-CH, 100V, 57A, TO-262	1894	5 $1.33 25 $1.22 100 $0.981 250 $0.919 500 $0.856
IRF3710LPBF DISTI #2860248	Infineon Technologies AG	MOSFET, N-CH, 100V, 57A, TO-262 RoHS: Compliant	1884	1 $2.1 10 $1.82 100 $1.49 250 $1.26 500 $1.09 1000 $1.03

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Infineon Technologies IRF3710L

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