Infineon Technologies IR2132JTRPBF
- Part Number:
- IR2132JTRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3255899-IR2132JTRPBF
- Description:
- IC DRIVER BRIDGE 3PHASE 44-PLCC
- Datasheet:
- IR2132JTRPBF
Infineon Technologies IR2132JTRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IR2132JTRPBF.
- Factory Lead Time18 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case44-LCC (J-Lead), 32 Leads
- Number of Pins44
- Operating Temperature-40°C~150°C TJ
- PackagingTape & Reel (TR)
- Published1996
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations32
- ECCN CodeEAR99
- Resistance75Ohm
- Terminal FinishMatte Tin (Sn)
- HTS Code8542.39.00.01
- SubcategoryMOSFET Drivers
- Max Power Dissipation2W
- TechnologyBICMOS
- Voltage - Supply10V~20V
- Terminal PositionQUAD
- Terminal FormJ BEND
- Number of Functions3
- Supply Voltage15V
- Terminal Pitch1.27mm
- Base Part NumberIR2132JPBF
- JESD-30 CodeS-PQCC-J32
- Max Output Current500mA
- Power Supplies15V
- Power Dissipation2W
- Output Current500mA
- Propagation Delay850 ns
- Input TypeInverting
- Turn On Delay Time850 ns
- Rise Time125ns
- Fall Time (Typ)55 ns
- Rise / Fall Time (Typ)80ns 35ns
- Channel Type3-Phase
- Number of Drivers6
- Turn On Time0.85 μs
- Output Peak Current Limit-Nom0.5A
- Driven ConfigurationHalf-Bridge
- Gate TypeIGBT, N-Channel MOSFET
- Current - Peak Output (Source, Sink)250mA 500mA
- High Side DriverYES
- Logic Voltage - VIL, VIH0.8V 2.2V
- Turn Off Time0.55 μs
- High Side Voltage - Max (Bootstrap)600V
- Height4.572mm
- Length16.6624mm
- Width16.6624mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
IR2132JTRPBF Overview
This particular component is manufactured by Infineon Technologies and falls under the category of PMIC - Gate Drivers. It is specifically a chip designed for power management and control, and is classified under the JESD-609 Code as e3 and the ECCN Code as EAR99. The maximum amount of power it can dissipate is 2 watts and it has a total of 3 functions. The rise time for this chip is 125 nanoseconds and it is designed for 3-phase channels. Additionally, it has a high side driver feature. In terms of physical dimensions, it has a height of 4.572 millimeters and a length of 16.6624 millimeters. It is also compliant with the RoHS3 standard.
IR2132JTRPBF Features
Embedded in the Tape & Reel (TR) package
6 drivers
Employing a gate type of IGBT, N-Channel MOSFET
44 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 2W
Resistance of 75Ohm
IR2132JTRPBF Applications
There are a lot of Infineon Technologies IR2132JTRPBF gate drivers applications.
High frequency line drivers
3-Phase Motor Inverter Driver
Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
A/D drivers
Automotive Applications
Isolated Supplies for Motor Control
High current laser/LED systems
Refrigerator
Isolated switch mode power supplies (SMPS)
Industrial Motor Inverter - Power Tools, Robotics
This particular component is manufactured by Infineon Technologies and falls under the category of PMIC - Gate Drivers. It is specifically a chip designed for power management and control, and is classified under the JESD-609 Code as e3 and the ECCN Code as EAR99. The maximum amount of power it can dissipate is 2 watts and it has a total of 3 functions. The rise time for this chip is 125 nanoseconds and it is designed for 3-phase channels. Additionally, it has a high side driver feature. In terms of physical dimensions, it has a height of 4.572 millimeters and a length of 16.6624 millimeters. It is also compliant with the RoHS3 standard.
IR2132JTRPBF Features
Embedded in the Tape & Reel (TR) package
6 drivers
Employing a gate type of IGBT, N-Channel MOSFET
44 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 2W
Resistance of 75Ohm
IR2132JTRPBF Applications
There are a lot of Infineon Technologies IR2132JTRPBF gate drivers applications.
High frequency line drivers
3-Phase Motor Inverter Driver
Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
A/D drivers
Automotive Applications
Isolated Supplies for Motor Control
High current laser/LED systems
Refrigerator
Isolated switch mode power supplies (SMPS)
Industrial Motor Inverter - Power Tools, Robotics
IR2132JTRPBF More Descriptions
Tape & Reel (TR) IR2132JPBF Half-Bridge 1996 gate driver 125ns -40C~150C TJ 250mA 500mA 2W
Half-Bridge Gate Driver IC Inverting 44-PLCC, 32 Leads (16.58x16.58)
600 V three-phase gate driver IC with over current protection, OPAMP and fault reporting, PLCC44, RoHSInfineon SCT
Surface Mount Tape & Reel (TR) Active EAR99 Gate Drivers ICs Inverting 6 600V V 44-LCC (J-Lead), 32 Leads IR2132JPBF Half-Bridge
600 V Three Phase Driver IC with typical 0.25 A source and 0.5 A sink currents in 44 Lead PLCC package for IGBTs and MOSFETs. Also available in 28 Lead PIDP and 28 Lead SOICWB. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage; dV/dt immune; Gate drive supply range from 10 to 20 V; Undervoltage lockout for all channels; Typical deadtime 0.8 s (IR2132) option available; Typical deadtime 2.5 s (IR2130 ); Over-current shutdown turns off all six drivers; Independent half-bridge drivers; Matched propagation delay for all channels; 2.5 V logic compatible; Outputs out of phase with inputs; Cross-conduction prevention logic
Half-Bridge Gate Driver IC Inverting 44-PLCC, 32 Leads (16.58x16.58)
600 V three-phase gate driver IC with over current protection, OPAMP and fault reporting, PLCC44, RoHSInfineon SCT
Surface Mount Tape & Reel (TR) Active EAR99 Gate Drivers ICs Inverting 6 600V V 44-LCC (J-Lead), 32 Leads IR2132JPBF Half-Bridge
600 V Three Phase Driver IC with typical 0.25 A source and 0.5 A sink currents in 44 Lead PLCC package for IGBTs and MOSFETs. Also available in 28 Lead PIDP and 28 Lead SOICWB. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage; dV/dt immune; Gate drive supply range from 10 to 20 V; Undervoltage lockout for all channels; Typical deadtime 0.8 s (IR2132) option available; Typical deadtime 2.5 s (IR2130 ); Over-current shutdown turns off all six drivers; Independent half-bridge drivers; Matched propagation delay for all channels; 2.5 V logic compatible; Outputs out of phase with inputs; Cross-conduction prevention logic
The three parts on the right have similar specifications to IR2132JTRPBF.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishHTS CodeSubcategoryMax Power DissipationTechnologyVoltage - SupplyTerminal PositionTerminal FormNumber of FunctionsSupply VoltageTerminal PitchBase Part NumberJESD-30 CodeMax Output CurrentPower SuppliesPower DissipationOutput CurrentPropagation DelayInput TypeTurn On Delay TimeRise TimeFall Time (Typ)Rise / Fall Time (Typ)Channel TypeNumber of DriversTurn On TimeOutput Peak Current Limit-NomDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)High Side DriverLogic Voltage - VIL, VIHTurn Off TimeHigh Side Voltage - Max (Bootstrap)HeightLengthWidthRadiation HardeningRoHS StatusSupplier Device PackageSurface MountPeak Reflow Temperature (Cel)Reflow Temperature-Max (s)Qualification StatusOutput CharacteristicsOutput PolarityInput CharacteristicsHeight Seated (Max)View Compare
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IR2132JTRPBF18 WeeksSurface MountSurface Mount44-LCC (J-Lead), 32 Leads44-40°C~150°C TJTape & Reel (TR)1996e3Active3 (168 Hours)32EAR9975OhmMatte Tin (Sn)8542.39.00.01MOSFET Drivers2WBICMOS10V~20VQUADJ BEND315V1.27mmIR2132JPBFS-PQCC-J32500mA15V2W500mA850 nsInverting850 ns125ns55 ns80ns 35ns3-Phase60.85 μs0.5AHalf-BridgeIGBT, N-Channel MOSFET250mA 500mAYES0.8V 2.2V0.55 μs600V4.572mm16.6624mm16.6624mmNoROHS3 Compliant----------
-
--Through Hole8-DIP (0.300, 7.62mm)--40°C~150°C TJTube2000-Obsolete1 (Unlimited)--------10V~20V-----IR2107------Inverting---150ns 50nsIndependent2--Half-BridgeIGBT, N-Channel MOSFET200mA 350mA-0.8V 2.7V-600V----Non-RoHS Compliant---------
-
--Surface Mount14-SOIC (0.154, 3.90mm Width)--40°C~150°C TJTube2000-Obsolete1 (Unlimited)--------10V~20V-----IR21074S------Inverting---150ns 50nsIndependent2--Half-BridgeIGBT, N-Channel MOSFET200mA 350mA-0.8V 2.7V-600V----Non-RoHS Compliant14-SOIC--------
-
--Surface Mount8-SOIC (0.154, 3.90mm Width)--40°C~150°C TJTube1996-Obsolete1 (Unlimited)8EAR99-----CMOS10V~20VDUALGULL WING115V-IR2104SR-PDSO-G8-----Non-Inverting---100ns 50nsSynchronous2-0.36AHalf-BridgeIGBT, N-Channel MOSFET210mA 360mAYES0.8V 3V-600V-4.9mm3.9mm-Non-RoHS Compliant-YESNOT SPECIFIEDNOT SPECIFIEDNot QualifiedTOTEM-POLETRUESCHMITT TRIGGER1.75mm
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