Infineon Technologies IPP100N08S2L07AKSA1

Name: IPP100N08S2L07AKSA1
Brand: Infineon Technologies
SKU: 2851825-IPP100N08S2L07AKSA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPP100N08S2L07AKSA1

Manufacturer:: Infineon Technologies

Ventron No:: 2851825-IPP100N08S2L07AKSA1

Description:: MOSFET N-CH 75V 100A TO220-3

ECAD Model:

Datasheet:: IPP100N08S2L07AKSA1

Specifications

Infineon Technologies IPP100N08S2L07AKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP100N08S2L07AKSA1.

Factory Lead Time
10 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
OptiMOS™
Published
2006
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
LOGIC LEVEL COMPATIBLE
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
300W Tc
Operating Mode
ENHANCEMENT MODE
Turn On Delay Time
19 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
6.8m Ω @ 80A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
5400pF @ 25V
Current - Continuous Drain (Id) @ 25°C
100A Tc
Gate Charge (Qg) (Max) @ Vgs
246nC @ 10V
Rise Time
56ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
22 ns
Turn-Off Delay Time
85 ns
Continuous Drain Current (ID)
100A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
75V
Drain-source On Resistance-Max
0.0068Ohm
Pulsed Drain Current-Max (IDM)
400A
Avalanche Energy Rating (Eas)
810 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead

Description

IPP100N08S2L07AKSA1 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 810 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5400pF @ 25V.This device has a continuous drain current (ID) of [100A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 85 ns.A maximum pulsed drain current of 400A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 19 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 75V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

IPP100N08S2L07AKSA1 Features
the avalanche energy rating (Eas) is 810 mJ
a continuous drain current (ID) of 100A
the turn-off delay time is 85 ns
based on its rated peak drain current 400A.

IPP100N08S2L07AKSA1 Applications
There are a lot of Infineon Technologies
IPP100N08S2L07AKSA1 applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

IPP100N08S2L07AKSA1 More Descriptions

Trans MOSFET N-CH 75V 100A Automotive 3-Pin(3 Tab) TO-220AB Tube
75V, N-Ch, 6.8 mΩ max, Automotive MOSFET, TO-220, OptiMOS™, PG-TO220-3, RoHSInfineon SCT
Transistor MOSFET N-Channel 75V 100A 3-Pin TO-220 Tube
Mosfet, N-Ch, 75V, 100A, To-220 Rohs Compliant: Yes |Infineon IPP100N08S2L07AKSA1
Power Field-Effect Transistor, 100A I(D), 75V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Summary of Features: N-channel Logic Level - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 75V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors

Product Comparison

The three parts on the right have similar specifications to IPP100N08S2L07AKSA1.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Surface Mount

Pbfree Code

Subcategory

Pin Count

JESD-30 Code

Qualification Status

Transistor Application

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

Supplier Device Package

View Compare
IPP100N08S2L07AKSA1

Infineon Technologies

10 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

OptiMOS™

2006

e3

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

LOGIC LEVEL COMPATIBLE

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

not_compliant

NOT SPECIFIED

1

SINGLE WITH BUILT-IN DIODE

300W Tc

ENHANCEMENT MODE

19 ns

N-Channel

6.8m Ω @ 80A, 10V

2V @ 250μA

Halogen Free

5400pF @ 25V

100A Tc

246nC @ 10V

56ns

4.5V 10V

±20V

22 ns

85 ns

100A

TO-220AB

20V

75V

0.0068Ohm

400A

810 mJ

ROHS3 Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-
IPP114N03L G

Infineon Technologies

-

-

Through Hole

TO-220-3

-

SILICON

-55°C~175°C TJ

Tube

OptiMOS™

2008

e3

Obsolete

1 (Unlimited)

3

EAR99

MATTE TIN

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

MOSFET (Metal Oxide)

SINGLE

260

compliant

NOT SPECIFIED

1

SINGLE WITH BUILT-IN DIODE

38W Tc

ENHANCEMENT MODE

-

N-Channel

11.4m Ω @ 30A, 10V

2.2V @ 250μA

-

1500pF @ 15V

30A Tc

14nC @ 10V

-

4.5V 10V

±20V

-

-

-

TO-220AB

-

-

0.0114Ohm

210A

30 mJ

RoHS Compliant

-

NO

yes

FET General Purpose Power

3

R-PSFM-T3

Not Qualified

SWITCHING

30V

30A

30V

-

IPP100N08S2L07AKSA1 vs IPP114N03L G
IPP10N03LB G

Infineon Technologies

-

-

Through Hole

TO-220-3

-

SILICON

-55°C~175°C TJ

Tube

OptiMOS™

2008

e3

Obsolete

1 (Unlimited)

3

EAR99

MATTE TIN

LOGIC LEVEL COMPATIBLE

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

compliant

NOT SPECIFIED

1

SINGLE WITH BUILT-IN DIODE

58W Tc

ENHANCEMENT MODE

-

N-Channel

9.9m Ω @ 50A, 10V

2V @ 20μA

-

1639pF @ 15V

50A Tc

13nC @ 5V

-

4.5V 10V

±20V

-

-

-

TO-220AB

-

-

0.0099Ohm

200A

57 mJ

RoHS Compliant

-

NO

-

FET General Purpose Power

3

R-PSFM-T3

Not Qualified

SWITCHING

30V

50A

30V

-

IPP100N08S2L07AKSA1 vs IPP10N03LB G
IPP100N06S205AKSA1

Infineon Technologies

-

-

Through Hole

TO-220-3

-

-

-55°C~175°C TJ

Tube

OptiMOS™

-

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

300W Tc

-

-

N-Channel

5mOhm @ 80A, 10V

4V @ 250μA

-

5.11pF @ 25V

100A Tc

170nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

55V

-

-

PG-TO220-3-1

IPP100N08S2L07AKSA1 vs IPP100N06S205AKSA1

Certification

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IPP100N~~(41)~~
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Part Number	Manufacturers	Description	Stock	Price
IPP100N08S2L07AKSA1 DISTI #V99:2348_06383026	Infineon Technologies AG	Trans MOSFET N-CH 75V 100A Automotive 3-Pin(3 Tab) RoHS: Compliant	490	1 $2.2522 10 $1.9309 100 $1.5971 500 $1.4552 1000 $1.2078 2500 $1.1186 5000 $1.0789 10000 $1.0659
IPP100N08S2L07AKSA1 DISTI #IPP100N08S2L07AKSA1-ND	Infineon Technologies AG	MOSFET N-CH 75V 100A TO220-3 RoHS: Compliant	498	1 $2.85 10 $2.572 100 $2.0666 500 $1.60738 1000 $1.33183
IPP100N08S2L07AKSA1 DISTI #31691468	Infineon Technologies AG	Trans MOSFET N-CH 75V 100A Automotive 3-Pin(3 Tab) RoHS: Compliant	490	6 $2.4211 10 $2.0757 100 $1.7169 500 $1.5643 1000 $1.2984 2500 $1.2025 5000 $1.1598 10000 $1.1458
IPP100N08S2L07XK DISTI #IPP100N08S2L07AKSA1	Infineon Technologies AG	Trans MOSFET N-CH 75V 100A 3-Pin(3 Tab) TO-220AB - RoHS: Compliant	0	500 $1.2029 1000 $1.1589 2000 $1.1169 3000 $1.0799 5000 $1.0599
IPP100N08S2L-07 DISTI #726-IPP100N08S2L07	Infineon Technologies AG	MOSFET N-Ch 75V 100A TO220-3 OptiMOS RoHS: Compliant	138	1 $2.45 10 $2.08 100 $1.67 500 $1.46 1000 $1.21 2500 $1.12 5000 $1.08
IPP100N08S2L07AKSA1 DISTI #726-IPP100N08S2L07AK	Infineon Technologies AG	MOSFET N-Ch 75V 100A TO220-3 OptiMOS RoHS: Compliant	570	1 $2.45 10 $2.08 100 $1.67 500 $1.46 1000 $1.21 2500 $1.12 5000 $1.08
IPP100N08S2L07AKSA1 DISTI #	Infineon Technologies AG	Power Field-Effect Transistor, 100A I(D), 75V, 0.0 RoHS: Compliant	490	1 $1.26 25 $1.17 100 $1.13 500 $1.08 1000 $1.03

Infineon Technologies IPP100N08S2L07AKSA1

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