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Infineon Technologies IPG20N06S415ATMA1
- Part Number:
- IPG20N06S415ATMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2475493-IPG20N06S415ATMA1
- Description:
- MOSFET 2N-CH 8TDSON
- ECAD Model:
-
- Datasheet:
- IPG20N06S415ATMA1
Infineon Technologies IPG20N06S415ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPG20N06S415ATMA1.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerVDFN
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101, OptiMOS™
- Published2010
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Max Power Dissipation50W
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Number of Elements2
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- Turn On Delay Time12 ns
- Power - Max50W
- FET Type2 N-Channel (Dual)
- Rds On (Max) @ Id, Vgs15.5m Ω @ 17A, 10V
- Vgs(th) (Max) @ Id4V @ 20μA
- Input Capacitance (Ciss) (Max) @ Vds2260pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
- Rise Time2ns
- Fall Time (Typ)9 ns
- Turn-Off Delay Time17 ns
- Continuous Drain Current (ID)20A
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage60V
- Drain-source On Resistance-Max0.0155Ohm
- Avalanche Energy Rating (Eas)90 mJ
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureStandard
- RoHS StatusROHS3 Compliant
IPG20N06S415ATMA1 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet IPG20N06S415ATMA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPG20N06S415ATMA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet IPG20N06S415ATMA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPG20N06S415ATMA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IPG20N06S415ATMA1 More Descriptions
Transistor MOSFET N-Channel 60V 20A Automotive 8-Pin TDSON EP T/R
Compliant Surface Mount 9 ns Tape & Reel (TR) 2 ns 15.5 mΩ 8 2.26 nF
2N-CH 60V 20A 15,5mOhm TDSON-8
IPG20N06S4-15- 55V-60V N-CHANNEL
Compliant Surface Mount 9 ns Tape & Reel (TR) 2 ns 15.5 mΩ 8 2.26 nF
2N-CH 60V 20A 15,5mOhm TDSON-8
IPG20N06S4-15- 55V-60V N-CHANNEL
The three parts on the right have similar specifications to IPG20N06S415ATMA1.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsConfigurationOperating ModeTurn On Delay TimePower - MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageDrain-source On Resistance-MaxAvalanche Energy Rating (Eas)FET TechnologyFET FeatureRoHS StatusFactory Lead TimeJESD-609 CodeTerminal FinishAdditional FeatureReach Compliance CodeHalogen FreeLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePower DissipationCurrent - Continuous Drain (Id) @ 25°CDrain to Source Voltage (Vdss)Input CapacitanceDrain to Source ResistanceRds On MaxElement ConfigurationDrain to Source Breakdown VoltageView Compare
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IPG20N06S415ATMA1Surface MountSurface Mount8-PowerVDFN8SILICON-55°C~175°C TJTape & Reel (TR)Automotive, AEC-Q101, OptiMOS™2010Discontinued1 (Unlimited)8EAR9950WFLATNOT SPECIFIEDNOT SPECIFIED2SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODE12 ns50W2 N-Channel (Dual)15.5m Ω @ 17A, 10V4V @ 20μA2260pF @ 25V29nC @ 10V2ns9 ns17 ns20A20V60V0.0155Ohm90 mJMETAL-OXIDE SEMICONDUCTORStandardROHS3 Compliant------------------- -
Surface MountSurface Mount8-PowerVDFN8SILICON-55°C~175°C TJTape & Reel (TR)Automotive, AEC-Q101, OptiMOS™2010Active1 (Unlimited)8EAR9954WFLATNOT SPECIFIEDNOT SPECIFIED2SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODE7 ns54W2 N-Channel (Dual)8.2m Ω @ 17A, 10V2.2V @ 22μA3050pF @ 25V39nC @ 10V3ns20 ns40 ns20A16V40V-145 mJMETAL-OXIDE SEMICONDUCTORLogic Level GateROHS3 Compliant12 Weekse3Tin (Sn)LOGIC LEVEL COMPATIBLEnot_compliantHalogen FreeContains Lead-----------
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Surface MountSurface Mount, Wettable Flank8-PowerVDFN8--55°C~175°C TJTape & Reel (TR)Automotive, AEC-Q101, OptiMOS™2013Active1 (Unlimited)--65W---2---65W2 N-Channel (Dual)35mOhm @ 15A, 10V2V @ 27μA790pF @ 25V23nC @ 10V---20A20V55V---Logic Level GateROHS3 Compliant10 Weeks----Halogen FreeContains LeadPG-TDSON-8-10175°C-55°C65W2A Tc55V790pF28mOhm35 mΩ--
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Surface MountSurface Mount, Wettable Flank8-PowerVDFN8--55°C~175°C TJTape & Reel (TR)Automotive, AEC-Q101, OptiMOS™1997Active1 (Unlimited)--51W-------51W2 N-Channel (Dual)50mOhm @ 15A, 10V2V @ 19μA560pF @ 25V17nC @ 10V3ns10 ns15 ns20A20V55V---Logic Level GateROHS3 Compliant10 Weeks----Halogen FreeContains LeadPG-TDSON-8-10175°C-55°C-20A55V560pF50mOhm50 mΩDual55V
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