IPD530N15N3GATMA1

Infineon Technologies IPD530N15N3GATMA1

Part Number:
IPD530N15N3GATMA1
Manufacturer:
Infineon Technologies
Ventron No:
2482496-IPD530N15N3GATMA1
Description:
MOSFET N-CH 150V 21A
ECAD Model:
Datasheet:
IPD530N15N3GATMA1

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Specifications
Infineon Technologies IPD530N15N3GATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD530N15N3GATMA1.
  • Factory Lead Time
    18 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    OptiMOS™
  • Published
    2008
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    68W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    53m Ω @ 18A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 35μA
  • Halogen Free
    Halogen Free
  • Input Capacitance (Ciss) (Max) @ Vds
    887pF @ 75V
  • Current - Continuous Drain (Id) @ 25°C
    21A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    12nC @ 10V
  • Drive Voltage (Max Rds On,Min Rds On)
    8V 10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    21A
  • Max Dual Supply Voltage
    150V
  • Pulsed Drain Current-Max (IDM)
    84A
  • Avalanche Energy Rating (Eas)
    60 mJ
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead
Description
IPD530N15N3GATMA1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 60 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 887pF @ 75V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 21A continuous drain current (ID).Peak drain current is 84A, which is the maximum pulsed drain current.In addition to 150V, it supports dual voltages up to the maximum.Using drive voltage (8V 10V), this device contributes to a reduction in overall power consumption.

IPD530N15N3GATMA1 Features
the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 21A
based on its rated peak drain current 84A.


IPD530N15N3GATMA1 Applications
There are a lot of Infineon Technologies
IPD530N15N3GATMA1 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IPD530N15N3GATMA1 More Descriptions
OptiMOS3 Power-Transistor / Trans MOSFET N-CH 150V 21A Automotive 3-Pin(2 Tab) DPAK T/R
N-Channel 150 V 53 mOhm 12 nC OptiMOS™3 Power-Transistor - PG-TO252-3-11
The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, PG-TO252-3, RoHSInfineon SCT
MOSFET, N CH, 150V, 21A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.044ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 68W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
Product Comparison
The three parts on the right have similar specifications to IPD530N15N3GATMA1.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Halogen Free
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    Max Dual Supply Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    RoHS Status
    Lead Free
    Surface Mount
    Pbfree Code
    Drain to Source Voltage (Vdss)
    JEDEC-95 Code
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    FET Feature
    JESD-609 Code
    Terminal Finish
    Subcategory
    Pin Count
    Qualification Status
    Drain Current-Max (Abs) (ID)
    Reference Standard
    Turn On Delay Time
    Rise Time
    Turn-Off Delay Time
    Gate to Source Voltage (Vgs)
    View Compare
  • IPD530N15N3GATMA1
    IPD530N15N3GATMA1
    18 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    OptiMOS™
    2008
    Active
    1 (Unlimited)
    2
    EAR99
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    68W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    53m Ω @ 18A, 10V
    4V @ 35μA
    Halogen Free
    887pF @ 75V
    21A Tc
    12nC @ 10V
    8V 10V
    ±20V
    21A
    150V
    84A
    60 mJ
    ROHS3 Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPD50R500CEBTMA1
    6 Weeks
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    CoolMOS™
    2013
    Discontinued
    1 (Unlimited)
    2
    -
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    NOT SPECIFIED
    -
    NOT SPECIFIED
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    57W Tc
    ENHANCEMENT MODE
    -
    N-Channel
    SWITCHING
    500m Ω @ 2.3A, 13V
    3.5V @ 200μA
    -
    433pF @ 100V
    7.6A Tc
    18.7nC @ 10V
    13V
    ±20V
    -
    -
    24A
    129 mJ
    ROHS3 Compliant
    -
    YES
    no
    500V
    TO-252AA
    0.5Ohm
    500V
    Super Junction
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPD50R399CP
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    CoolMOS™
    2007
    Obsolete
    1 (Unlimited)
    2
    -
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    NOT SPECIFIED
    compliant
    NOT SPECIFIED
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    83W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    399m Ω @ 4.9A, 10V
    3.5V @ 330μA
    -
    890pF @ 100V
    9A Tc
    23nC @ 10V
    10V
    ±20V
    -
    -
    20A
    215 mJ
    RoHS Compliant
    -
    YES
    yes
    550V
    TO-252AA
    0.399Ohm
    500V
    -
    e3
    TIN
    FET General Purpose Power
    4
    Not Qualified
    9A
    -
    -
    -
    -
    -
  • IPD50N10S3L16ATMA1
    14 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    OptiMOS™
    2011
    Active
    1 (Unlimited)
    2
    EAR99
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    100W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    -
    15m Ω @ 50A, 10V
    2.4V @ 60μA
    Halogen Free
    4180pF @ 25V
    50A Tc
    64nC @ 10V
    4.5V 10V
    ±20V
    50A
    100V
    200A
    -
    ROHS3 Compliant
    Contains Lead
    -
    -
    -
    -
    0.0199Ohm
    -
    -
    e3
    Matte Tin (Sn)
    -
    -
    -
    -
    AEC-Q101
    10 ns
    5ns
    29 ns
    20V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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