Infineon Technologies IPD530N15N3GATMA1
- Part Number:
- IPD530N15N3GATMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2482496-IPD530N15N3GATMA1
- Description:
- MOSFET N-CH 150V 21A
- Datasheet:
- IPD530N15N3GATMA1
Infineon Technologies IPD530N15N3GATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD530N15N3GATMA1.
- Factory Lead Time18 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesOptiMOS™
- Published2008
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max68W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs53m Ω @ 18A, 10V
- Vgs(th) (Max) @ Id4V @ 35μA
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds887pF @ 75V
- Current - Continuous Drain (Id) @ 25°C21A Tc
- Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On)8V 10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)21A
- Max Dual Supply Voltage150V
- Pulsed Drain Current-Max (IDM)84A
- Avalanche Energy Rating (Eas)60 mJ
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead
IPD530N15N3GATMA1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 60 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 887pF @ 75V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 21A continuous drain current (ID).Peak drain current is 84A, which is the maximum pulsed drain current.In addition to 150V, it supports dual voltages up to the maximum.Using drive voltage (8V 10V), this device contributes to a reduction in overall power consumption.
IPD530N15N3GATMA1 Features
the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 21A
based on its rated peak drain current 84A.
IPD530N15N3GATMA1 Applications
There are a lot of Infineon Technologies
IPD530N15N3GATMA1 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 60 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 887pF @ 75V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 21A continuous drain current (ID).Peak drain current is 84A, which is the maximum pulsed drain current.In addition to 150V, it supports dual voltages up to the maximum.Using drive voltage (8V 10V), this device contributes to a reduction in overall power consumption.
IPD530N15N3GATMA1 Features
the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 21A
based on its rated peak drain current 84A.
IPD530N15N3GATMA1 Applications
There are a lot of Infineon Technologies
IPD530N15N3GATMA1 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IPD530N15N3GATMA1 More Descriptions
OptiMOS3 Power-Transistor / Trans MOSFET N-CH 150V 21A Automotive 3-Pin(2 Tab) DPAK T/R
N-Channel 150 V 53 mOhm 12 nC OptiMOS3 Power-Transistor - PG-TO252-3-11
The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, PG-TO252-3, RoHSInfineon SCT
MOSFET, N CH, 150V, 21A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.044ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 68W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
N-Channel 150 V 53 mOhm 12 nC OptiMOS3 Power-Transistor - PG-TO252-3-11
The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, PG-TO252-3, RoHSInfineon SCT
MOSFET, N CH, 150V, 21A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.044ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 68W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
The three parts on the right have similar specifications to IPD530N15N3GATMA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Max Dual Supply VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusLead FreeSurface MountPbfree CodeDrain to Source Voltage (Vdss)JEDEC-95 CodeDrain-source On Resistance-MaxDS Breakdown Voltage-MinFET FeatureJESD-609 CodeTerminal FinishSubcategoryPin CountQualification StatusDrain Current-Max (Abs) (ID)Reference StandardTurn On Delay TimeRise TimeTurn-Off Delay TimeGate to Source Voltage (Vgs)View Compare
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IPD530N15N3GATMA118 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2008Active1 (Unlimited)2EAR99MOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSSO-G21SINGLE WITH BUILT-IN DIODE68W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING53m Ω @ 18A, 10V4V @ 35μAHalogen Free887pF @ 75V21A Tc12nC @ 10V8V 10V±20V21A150V84A60 mJROHS3 CompliantContains Lead-------------------
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6 Weeks-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-SILICON-55°C~150°C TJCut Tape (CT)CoolMOS™2013Discontinued1 (Unlimited)2-MOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIED-NOT SPECIFIEDR-PSSO-G21SINGLE WITH BUILT-IN DIODE57W TcENHANCEMENT MODE-N-ChannelSWITCHING500m Ω @ 2.3A, 13V3.5V @ 200μA-433pF @ 100V7.6A Tc18.7nC @ 10V13V±20V--24A129 mJROHS3 Compliant-YESno500VTO-252AA0.5Ohm500VSuper Junction-----------
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--Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-SILICON-55°C~150°C TJTape & Reel (TR)CoolMOS™2007Obsolete1 (Unlimited)2-MOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDcompliantNOT SPECIFIEDR-PSSO-G21SINGLE WITH BUILT-IN DIODE83W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING399m Ω @ 4.9A, 10V3.5V @ 330μA-890pF @ 100V9A Tc23nC @ 10V10V±20V--20A215 mJRoHS Compliant-YESyes550VTO-252AA0.399Ohm500V-e3TINFET General Purpose Power4Not Qualified9A-----
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14 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2011Active1 (Unlimited)2EAR99MOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSSO-G21SINGLE WITH BUILT-IN DIODE100W TcENHANCEMENT MODEDRAINN-Channel-15m Ω @ 50A, 10V2.4V @ 60μAHalogen Free4180pF @ 25V50A Tc64nC @ 10V4.5V 10V±20V50A100V200A-ROHS3 CompliantContains Lead----0.0199Ohm--e3Matte Tin (Sn)----AEC-Q10110 ns5ns29 ns20V
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