IMH3AT110

Rohm Semiconductor IMH3AT110

Part Number:
IMH3AT110
Manufacturer:
Rohm Semiconductor
Ventron No:
2461465-IMH3AT110
Description:
TRANS PREBIAS DUAL NPN SMT6
ECAD Model:
Datasheet:
IMH3AT110

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Specifications
Rohm Semiconductor IMH3AT110 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor IMH3AT110.
  • Factory Lead Time
    13 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-74, SOT-457
  • Number of Pins
    6
  • Packaging
    Tape & Reel (TR)
  • Published
    2004
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Additional Feature
    DIGITAL
  • HTS Code
    8541.21.00.75
  • Subcategory
    BIP General Purpose Small Signal
  • Voltage - Rated DC
    50V
  • Max Power Dissipation
    300mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    100mA
  • Time@Peak Reflow Temperature-Max (s)
    10
  • Base Part Number
    *MH3
  • Pin Count
    6
  • Max Output Current
    100mA
  • Operating Supply Voltage
    50V
  • Number of Elements
    2
  • Polarity
    NPN
  • Element Configuration
    Dual
  • Power Dissipation
    300mW
  • Transistor Application
    SWITCHING
  • Transistor Type
    2 NPN - Pre-Biased (Dual)
  • Collector Emitter Voltage (VCEO)
    300mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 1mA 5V
  • Current - Collector Cutoff (Max)
    500nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 250μA, 5mA
  • Collector Emitter Breakdown Voltage
    50V
  • Transition Frequency
    250MHz
  • Max Breakdown Voltage
    50V
  • Frequency - Transition
    250MHz
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    100
  • Resistor - Base (R1)
    4.7k Ω
  • Continuous Collector Current
    100mA
  • VCEsat-Max
    0.3 V
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IMH3AT110 Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet IMH3AT110 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IMH3AT110. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IMH3AT110 More Descriptions
Trans Digital BJT NPN 50V 100mA 300mW 6-Pin SMT T/R
IMH3A Series 50 V 100 mA Surface Mount Dual NPN Digital Transistor - SC-74
TRANSISTOR DUAL SC-74 NPN/NPN; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: -; Resistor Rat
TRANSISTOR DUAL SC-74 NPN/NPN; Transistor Type:General Purpose; Transistor Polarity:Dual NPN; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:5mA; Voltage, Vce Sat Max:300mV; Power Dissipation:300mW; Min ;RoHS Compliant: Yes
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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