Infineon Technologies IHW30N120R3FKSA1
- Part Number:
- IHW30N120R3FKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2494326-IHW30N120R3FKSA1
- Description:
- IGBT 1200V 60A 349W TO247-3
- Datasheet:
- IHW30N120R3FKSA1
Infineon Technologies IHW30N120R3FKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IHW30N120R3FKSA1.
- Factory Lead Time14 Weeks
- MountSurface Mount, Through Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Operating Temperature-40°C~175°C TJ
- PackagingTube
- SeriesTrenchStop®
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation349W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max349W
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)1.2kV
- Max Collector Current60A
- Collector Emitter Breakdown Voltage1.2kV
- Voltage - Collector Emitter Breakdown (Max)1200V
- Test Condition600V, 30A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic1.75V @ 15V, 30A
- Gate Charge263nC
- Current - Collector Pulsed (Icm)90A
- Td (on/off) @ 25°C-/326ns
- Switching Energy1.47mJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max6.4V
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IHW30N120R3FKSA1 Description
The IHW30N120R3FKSA1 is a Reverse conducting IGBT with a monolithic body diode.
IHW30N120R3FKSA1 Features
Powerful monolithic body diode with low forward voltage designed for soft commutation only
TRENCHSTOPTM technology offering: -very tight parameter distribution -high ruggedness, temperature stable behaviour -low VCEsat -easy parallel switching capability due to positive temperature coefficient in VCEsat
Low EMI
Qualified according to JESD-022 for target applications
Pb-free lead plating; RoHS compliant
Halogen-free(according to IEC61249-2-21)
IHW30N120R3FKSA1 Applications
Inductive cooking
Inverterized microwave ovens
Resonant converters
Soft switching applications
The IHW30N120R3FKSA1 is a Reverse conducting IGBT with a monolithic body diode.
IHW30N120R3FKSA1 Features
Powerful monolithic body diode with low forward voltage designed for soft commutation only
TRENCHSTOPTM technology offering: -very tight parameter distribution -high ruggedness, temperature stable behaviour -low VCEsat -easy parallel switching capability due to positive temperature coefficient in VCEsat
Low EMI
Qualified according to JESD-022 for target applications
Pb-free lead plating; RoHS compliant
Halogen-free(according to IEC61249-2-21)
IHW30N120R3FKSA1 Applications
Inductive cooking
Inverterized microwave ovens
Resonant converters
Soft switching applications
IHW30N120R3FKSA1 More Descriptions
Trans IGBT Chip N-CH 1200V 60A 349000mW 3-Pin(3 Tab) TO-247 Tube, PG-TO247-3, RoHSInfineon SCT
Transistor, Igbt, 1.2Kv, 60A, To-247; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):1.55V; Power Dissipation Pd:349W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins;rohs Compliant: Yes
The 3 rd generation of reverse conducting IGBTs has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs. | Summary of Features: Best-in-class conduction properties in V CE(sat) and V f; Lowest switching losses, highest efficiency; T j(max) = 175C; Soft current turn-off waveforms for low EMI | Benefits: Lowest power dissipation; Better thermal management; Surge current capability; Lower EMI filtering requirements; Reduced system costs; Excellent quality; Highest reliability against peak currents | Target Applications: Induction cooking stoves; Microwave ovens; Rice cookers; Solar; Other soft switching applications
Transistor, Igbt, 1.2Kv, 60A, To-247; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):1.55V; Power Dissipation Pd:349W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins;rohs Compliant: Yes
The 3 rd generation of reverse conducting IGBTs has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs. | Summary of Features: Best-in-class conduction properties in V CE(sat) and V f; Lowest switching losses, highest efficiency; T j(max) = 175C; Soft current turn-off waveforms for low EMI | Benefits: Lowest power dissipation; Better thermal management; Surge current capability; Lower EMI filtering requirements; Reduced system costs; Excellent quality; Highest reliability against peak currents | Target Applications: Induction cooking stoves; Microwave ovens; Rice cookers; Solar; Other soft switching applications
The three parts on the right have similar specifications to IHW30N120R3FKSA1.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishSubcategoryMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Element ConfigurationInput TypePower - MaxPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Test ConditionVce(on) (Max) @ Vge, IcGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxRoHS StatusLead FreeSurface MountTransistor Element MaterialNumber of TerminationsTerminal PositionReach Compliance CodePin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationCase ConnectionTransistor ApplicationJEDEC-95 CodeCurrent - Collector (Ic) (Max)Turn On TimeTurn Off Time-Nom (toff)IGBT TypePower Dissipation-Max (Abs)View Compare
-
IHW30N120R3FKSA114 WeeksSurface Mount, Through HoleThrough HoleTO-247-33-40°C~175°C TJTubeTrenchStop®2008e3yesObsolete1 (Unlimited)EAR99Tin (Sn)Insulated Gate BIP Transistors349WNOT SPECIFIEDNOT SPECIFIEDSingleStandard349WN-CHANNEL1.2kV60A1.2kV1200V600V, 30A, 10 Ω, 15V1.75V @ 15V, 30A263nC90A-/326ns1.47mJ (off)20V6.4VRoHS CompliantLead Free-------------------
-
--Through HoleTO-247-3--40°C~175°C TJTubeTrenchStop®2008-yesObsolete1 (Unlimited)----NOT SPECIFIEDNOT SPECIFIED-Standard412WN-CHANNEL---1000V600V, 30A, 15 Ω, 15V1.7V @ 15V, 30A217nC90A35ns/546ns1.6mJ (off)--RoHS Compliant-NOSILICON3SINGLEcompliant3R-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODECOLLECTORPOWER CONTROLTO-247AD60A90 ns702 nsTrench Field Stop-
-
14 Weeks-Through HoleTO-247-3--40°C~175°C TJTubeTrenchStop®2008e3yesObsolete1 (Unlimited)-Tin (Sn)Insulated Gate BIP Transistors-NOT SPECIFIEDNOT SPECIFIED-Standard187WN-CHANNEL---600V400V, 30A, 10.6 Ω, 15V2V @ 15V, 30A167nC90A23ns/254ns770μJ20V5.7VRoHS Compliant-NOSILICON3SINGLEcompliant3R-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODECOLLECTORMOTOR CONTROLTO-247AC60A50 ns382 nsTrench Field Stop187W
-
26 WeeksThrough HoleThrough HoleTO-247-33-40°C~175°C TJTube-2015e3yesActive1 (Unlimited)EAR99Tin (Sn)Insulated Gate BIP Transistors333WNOT SPECIFIEDNOT SPECIFIEDSingleStandard333WN-CHANNEL1.1kV60A1.1kV1100V600V, 30A, 15 Ω, 15V1.75V @ 15V, 30A180nC90A-/350ns1.15mJ (off)20V6.4VROHS3 CompliantLead Free-SILICON3--3-Not Qualified1--POWER CONTROL---470 nsTrench-
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
08 March 2024
In-depth Analysis of SS34 Schottky Diode
Ⅰ. Overview of SS34Ⅱ. Purpose of SS34 diodeⅢ. Technical parameters of SS34 diodeⅣ. Advantages of SS34 diodesⅤ. Working principle of SS34 diodeⅥ. Typical characteristics of SS34 diodesⅦ. Case... -
11 March 2024
BTS50085-1TMA Specifications, Functions, Purpose and More
Ⅰ. What is BTS50085-1TMA?Ⅱ. Specifications of BTS50085-1TMAⅢ. What are the functions of BTS50085-1TMA?Ⅳ. Inverse load current operation of BTS50085-1TMAⅤ. Externally adjustable current limit of BTS50085-1TMAⅥ. How to use... -
11 March 2024
LM317: Ideal for Adjustable, High-Efficiency Three-Terminal Regulators
Ⅰ. Introduction to LM317Ⅱ. The function of LM317 adjustable voltage stabilized power supply voltage stabilizing circuitⅢ. Soft-start circuit of LM317Ⅳ. Minimum stable operating current of LM317Ⅴ. Calculation of... -
12 March 2024
MPU-6050 Manufacturer, Working Principle, Application and Package
Ⅰ. Introduction to MPU-6050Ⅱ. Manufacturer of MPU-6050Ⅲ. Internal block diagram of MPU-6050Ⅳ. How does the MPU-6050 work?Ⅴ. Where is MPU-6050 used?Ⅵ. Package of MPU-6050Ⅶ. How to reduce the...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.