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IGW50N60TPXKSA1

Infineon Technologies IGW50N60TPXKSA1

Part Number:
IGW50N60TPXKSA1
Manufacturer:
Infineon Technologies
Ventron No:
2494334-IGW50N60TPXKSA1
Description:
IGBT 600V 80A 319.2W TO247
ECAD Model:
Datasheet:
IGW50N60TPXKSA1

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Specifications
Infineon Technologies IGW50N60TPXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IGW50N60TPXKSA1.
  • Factory Lead Time
    16 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -40°C~175°C TJ
  • Packaging
    Tube
  • Series
    TrenchStop™
  • Published
    2012
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    Not Applicable
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Additional Feature
    FAST SWITCHING
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PSFM-T3
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    319.2W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • JEDEC-95 Code
    TO-247AC
  • Voltage - Collector Emitter Breakdown (Max)
    600V
  • Current - Collector (Ic) (Max)
    80A
  • Turn On Time
    60 ns
  • Test Condition
    400V, 50A, 7 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    1.8V @ 15V, 50A
  • Turn Off Time-Nom (toff)
    396 ns
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    249nC
  • Current - Collector Pulsed (Icm)
    150A
  • Td (on/off) @ 25°C
    20ns/215ns
  • Switching Energy
    1.53mJ (on), 850μJ (off)
  • RoHS Status
    ROHS3 Compliant
Description
IGW50N60TPXKSA1 Description   IGW50N60TPXKSA1 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IGW50N60TPXKSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IGW50N60TPXKSA1 has the common source configuration.     IGW50N60TPXKSA1 Features   Gold metalization Excellent thermal stability Common source configuration Thermally enhanced packaging     IGW50N60TPXKSA1 Applications   ISM applications DC large signal applications Power factor correction Electronic lamp ballasts Flat panel display    
IGW50N60TPXKSA1 More Descriptions
IGW50N60TP Series 600 V 80 A Through Hole IGBT TrenchStop™ - PG-TO-247-3
Igbt, Single, 600V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.6V; Power Dissipation Pd:319.2W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
The new 600V TRENCHSTOP Performance has been developed based on 600V TRENCHSTOP IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off energy with outstanding robustness and excellent EMI behavior. | Summary of Features: Lower total switching losses (E ts) i.e. better efficiency IGBT 7% lower E ts for switching speed of 8kHz 11% lower E ts for switching speed of 15kHz; Low speed dV/dt switching (<5V/ns); Low EMI; Improved cell design for higher reliability | Target Applications: Motor control; Air conditioning compressors; HVAC motor drives; UPS; Solar power converters
Product Comparison
The three parts on the right have similar specifications to IGW50N60TPXKSA1.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Configuration
    Case Connection
    Input Type
    Power - Max
    Transistor Application
    Polarity/Channel Type
    JEDEC-95 Code
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    RoHS Status
    Mount
    Number of Pins
    JESD-609 Code
    Terminal Finish
    Max Power Dissipation
    Element Configuration
    Power Dissipation
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    REACH SVHC
    Lead Free
    Halogen Free
    Pin Count
    Qualification Status
    View Compare
  • IGW50N60TPXKSA1
    IGW50N60TPXKSA1
    Infineon Technologies
    16 Weeks
    Through Hole
    TO-247-3
    NO
    SILICON
    -40°C~175°C TJ
    Tube
    TrenchStop™
    2012
    yes
    Active
    Not Applicable
    3
    EAR99
    FAST SWITCHING
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    1
    SINGLE
    COLLECTOR
    Standard
    319.2W
    POWER CONTROL
    N-CHANNEL
    TO-247AC
    600V
    80A
    60 ns
    400V, 50A, 7 Ω, 15V
    1.8V @ 15V, 50A
    396 ns
    Trench Field Stop
    249nC
    150A
    20ns/215ns
    1.53mJ (on), 850μJ (off)
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IGW50N65F5FKSA1
    IGW50N65F5FKSA1
    Infineon Technologies
    16 Weeks
    Through Hole
    TO-247-3
    -
    -
    -40°C~175°C TJ
    Tube
    TrenchStop®
    2008
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    -
    Standard
    -
    -
    -
    -
    -
    -
    -
    400V, 25A, 12 Ω, 15V
    2.1V @ 15V, 50A
    -
    -
    120nC
    150A
    21ns/175ns
    490μJ (on), 160μJ (off)
    ROHS3 Compliant
    Through Hole
    3
    e3
    Tin (Sn)
    305W
    Single
    305W
    1.6V
    80A
    650V
    1.6V
    Unknown
    Lead Free
    -
    -
    -
    IGW50N60TPXKSA1 vs IGW50N65F5FKSA1
  • IGW50N65H5AXKSA1
    IGW50N65H5AXKSA1
    Infineon Technologies
    14 Weeks
    Through Hole
    TO-247-3
    -
    SILICON
    -40°C~175°C TJ
    Tube
    Automotive, AEC-Q101, TrenchStop™
    2015
    yes
    Not For New Designs
    1 (Unlimited)
    3
    EAR99
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    1
    -
    COLLECTOR
    Standard
    270W
    POWER CONTROL
    N-CHANNEL
    -
    -
    -
    33 ns
    400V, 25A, 12 Ω, 15V
    2.1V @ 15V, 50A
    213 ns
    Trench
    116nC
    150A
    21ns/173ns
    450μJ (on), 160μJ (off)
    ROHS3 Compliant
    Through Hole
    3
    -
    -
    270W
    Single
    -
    650V
    80A
    650V
    -
    -
    Lead Free
    Halogen Free
    -
    -
    IGW50N60TPXKSA1 vs IGW50N65H5AXKSA1
  • IGW50N60H3FKSA1
    IGW50N60H3FKSA1
    Infineon Technologies
    18 Weeks
    Through Hole
    TO-247-3
    NO
    SILICON
    -40°C~175°C TJ
    Tube
    TrenchStop®
    2005
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    1
    SINGLE
    -
    Standard
    333W
    POWER CONTROL
    N-CHANNEL
    -
    600V
    100A
    54 ns
    400V, 50A, 7 Ω, 15V
    2.3V @ 15V, 50A
    297 ns
    Trench Field Stop
    315nC
    200A
    23ns/235ns
    2.36mJ
    ROHS3 Compliant
    -
    -
    e3
    Tin (Sn)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    3
    Not Qualified
    IGW50N60TPXKSA1 vs IGW50N60H3FKSA1
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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