Infineon Technologies IGB30N60TATMA1
- Part Number:
- IGB30N60TATMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2494798-IGB30N60TATMA1
- Description:
- IGBT 600V 60A 187W TO263-3-2
- Datasheet:
- IGB30N60TATMA1
Infineon Technologies IGB30N60TATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IGB30N60TATMA1.
- Factory Lead Time26 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Supplier Device PackagePG-TO263-3-2
- Operating Temperature-40°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchStop®
- Published2006
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Base Part NumberGB30N60
- Input TypeStandard
- Power - Max187W
- Voltage - Collector Emitter Breakdown (Max)600V
- Current - Collector (Ic) (Max)60A
- Test Condition400V, 30A, 10.6Ohm, 15V
- Vce(on) (Max) @ Vge, Ic2.05V @ 15V, 30A
- IGBT TypeTrench
- Gate Charge167nC
- Current - Collector Pulsed (Icm)90A
- Td (on/off) @ 25°C23ns/254ns
- Switching Energy1.46mJ
- RoHS StatusROHS3 Compliant
IGB30N60TATMA1 Description
TRENCHSTOPTM and Fieldstop technology with IGBT
IGB30N60TATMA1 Features
The temperature coefficient in VCE is positive (sat)
Lower EMI
Pb-free lead plating; compatible with RoHS
JEDEC1-qualified for the intended applications
IGB30N60TATMA1 Applications
Switching applications
TRENCHSTOPTM and Fieldstop technology with IGBT
IGB30N60TATMA1 Features
The temperature coefficient in VCE is positive (sat)
Lower EMI
Pb-free lead plating; compatible with RoHS
JEDEC1-qualified for the intended applications
IGB30N60TATMA1 Applications
Switching applications
IGB30N60TATMA1 More Descriptions
Trans IGBT Chip N-CH 600V 45A 187000mW 3-Pin(2 Tab) D2PAK T/R
Infineon's 600 V, 30 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO263-3, RoHSInfineon SCT
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
Infineon's 600 V, 30 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO263-3, RoHSInfineon SCT
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
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