INFINEON HUF76105SK8T

Name: HUF76105SK8T
Brand: INFINEON
SKU: 6221572-HUF76105SK8T
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: HUF76105SK8T

Manufacturer:: INFINEON

Ventron No:: 6221572-HUF76105SK8T

Description:

ECAD Model:

Datasheet:: HUF76105SK8T

Specifications

INFINEON HUF76105SK8T technical specifications, attributes, parameters and parts with similar specifications to INFINEON HUF76105SK8T.

Surface Mount
YES
Number of Terminals
8
Transistor Element Material
SILICON
JESD-609 Code
e0
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Additional Feature
ULTRA-LOW RESISTANCE
Subcategory
FET General Purpose Power
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
8
JESD-30 Code
R-PDSO-G8
Qualification Status
Not Qualified
Operating Temperature (Max)
150°C
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Operating Mode
ENHANCEMENT MODE
Transistor Application
SWITCHING
Polarity/Channel Type
N-CHANNEL
JEDEC-95 Code
MS-012AA
Drain Current-Max (Abs) (ID)
5.5A
Drain-source On Resistance-Max
0.072Ohm
DS Breakdown Voltage-Min
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)
2.5W
RoHS Status
Non-RoHS Compliant

Description

HUF76105SK8T Overview
This product is manufactured by INFINEON and belongs to the category of Housingless Welding Diode. The images we provide are for reference only, for detailed product information please see specification sheet HUF76105SK8T or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of HUF76105SK8T. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

HUF76105SK8T More Descriptions

Not available to order 5a, 30V, 0.050 Ohm Logic Level N-Ch
N-CHANNEL POWER MOSFET
Power Field-Effect Transistor, 5.5A I(D), 30V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, MS-012AA, 8 PIN
MISCELLANEOUS MOSFETS;

Product Comparison

The three parts on the right have similar specifications to HUF76105SK8T.

Image

Part Number

Manufacturer

Surface Mount

Number of Terminals

Transistor Element Material

JESD-609 Code

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Number of Elements

Configuration

Operating Mode

Transistor Application

Polarity/Channel Type

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

FET Technology

Power Dissipation-Max (Abs)

RoHS Status

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Moisture Sensitivity Level (MSL):

Lead Free Status / RoHS Status:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Detailed Description:

Current - Continuous Drain (Id) @ 25°C:

View Compare
HUF76105SK8T

INFINEON

YES

8

SILICON

e0

EAR99

Tin/Lead (Sn/Pb)

ULTRA-LOW RESISTANCE

FET General Purpose Power

DUAL

GULL WING

NOT SPECIFIED

compliant

NOT SPECIFIED

8

R-PDSO-G8

Not Qualified

150°C

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

SWITCHING

N-CHANNEL

MS-012AA

5.5A

0.072Ohm

30V

METAL-OXIDE SEMICONDUCTOR

2.5W

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
HUF75639S3

fsc

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4V @ 250µA

±20V

MOSFET (Metal Oxide)

I2PAK (TO-262)

UltraFET™

25 mOhm @ 56A, 10V

200W (Tc)

Tube

TO-262-3 Long Leads, I²Pak, TO-262AA

-55°C ~ 175°C (TJ)

Through Hole

1 (Unlimited)

Lead free / RoHS Compliant

2000pF @ 25V

130nC @ 20V

N-Channel

-

10V

100V

N-Channel 100V 56A (Tc) 200W (Tc) Through Hole I2PAK (TO-262)

56A (Tc)

HUF76105SK8T vs HUF75639S3
HUF75333P3

fsc

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4V @ 250µA

±20V

MOSFET (Metal Oxide)

TO-220AB

UltraFET™

16 mOhm @ 66A, 10V

150W (Tc)

Tube

TO-220-3

-55°C ~ 175°C (TJ)

Through Hole

1 (Unlimited)

Lead free / RoHS Compliant

1300pF @ 25V

85nC @ 20V

N-Channel

-

10V

55V

N-Channel 55V 66A (Tc) 150W (Tc) Through Hole TO-220AB

66A (Tc)

HUF76105SK8T vs HUF75333P3
HUF75343G3

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4V @ 250µA

±20V

MOSFET (Metal Oxide)

TO-247

UltraFET™

9 mOhm @ 75A, 10V

270W (Tc)

Tube

TO-247-3

-55°C ~ 175°C (TJ)

Through Hole

1 (Unlimited)

Lead free / RoHS Compliant

3000pF @ 25V

205nC @ 20V

N-Channel

-

10V

55V

N-Channel 55V 75A (Tc) 270W (Tc) Through Hole TO-247

75A (Tc)

HUF76105SK8T vs HUF75343G3