INTERSIL HUF75545P3
- Part Number:
- HUF75545P3
- Manufacturer:
- INTERSIL
- Ventron No:
- 5470390-HUF75545P3
- Description:
- 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET
- Datasheet:
- TO220B03 Pkg Drawing
part No. HUF75545P3 Is this available? : YesShipped from : HK warehouseSame model may have different manufacturers, images only for reference.
HUF75545P3 More Descriptions
N-Channel 80 V 0.01 Ohm Flange Mount UltraFET Power Mosfet - TO-220AB
Fairchild HUF75545P3 N-channel MOSFET Transistor, 75 A, 55 V, 3-Pin TO-220AB | ON Semiconductor HUF75545P3
N-Channel UltraFET Power MOSFET 80V, 75A, 10mΩ
Trans MOSFET N-CH 80V 75A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
MOSFET,N CH,80V,75A,TO220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Diss
Power Field-Effect Transistor, 75A I(D), 80V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Fairchild HUF75545P3 N-channel MOSFET Transistor, 75 A, 55 V, 3-Pin TO-220AB | ON Semiconductor HUF75545P3
N-Channel UltraFET Power MOSFET 80V, 75A, 10mΩ
Trans MOSFET N-CH 80V 75A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
MOSFET,N CH,80V,75A,TO220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Diss
Power Field-Effect Transistor, 75A I(D), 80V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The three parts on the right have similar specifications to HUF75545P3.
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ImagePart NumberManufacturerVgs(th) (Max) @ Id:Vgs (Max):Technology:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power Dissipation (Max):Packaging:Package / Case:Operating Temperature:Mounting Type:Moisture Sensitivity Level (MSL):Lead Free Status / RoHS Status:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drive Voltage (Max Rds On, Min Rds On):Drain to Source Voltage (Vdss):Detailed Description:Current - Continuous Drain (Id) @ 25°C:Mounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Surface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinRoHS StatusView Compare
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HUF75545P3--------------------------------------------------------------
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FSC4V @ 250µA±20VMOSFET (Metal Oxide)D²PAK (TO-263AB)UltraFET™42 mOhm @ 43A, 10V230W (Tc)TubeTO-263-3, D²Pak (2 Leads Tab), TO-263AB-55°C ~ 175°C (TJ)Surface Mount1 (Unlimited)Lead free / RoHS Compliant2730pF @ 25V175nC @ 20VN-Channel-10V150VN-Channel 150V 43A (Tc) 230W (Tc) Surface Mount D²PAK (TO-263AB)43A (Tc)----------------------------------------
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---------------------Surface MountTO-252-3, DPak (2 Leads Tab), SC-63D-Pak-55°C~175°C TJTape & Reel (TR)UltraFET™2002Obsolete1 (Unlimited)MOSFET (Metal Oxide)55W TcN-Channel70mOhm @ 19A, 10V4V @ 250μA350pF @ 25V19A Tc24nC @ 20V55V10V±20V--------------------
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---------------------Through HoleTO-251-3 Short Leads, IPak, TO-251AA--55°C~175°C TJTubeUltraFET™-Obsolete1 (Unlimited)MOSFET (Metal Oxide)45W TcN-Channel90m Ω @ 15A, 10V4V @ 250μA250pF @ 25V15A Tc20nC @ 20V55V10V±20VNOSILICONe3yes3TINSINGLENOT SPECIFIEDNOT SPECIFIEDR-PSIP-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING15A0.09Ohm55VNon-RoHS Compliant
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