Intersil HIP2101EIB
- Part Number:
- HIP2101EIB
- Manufacturer:
- Intersil
- Ventron No:
- 3735659-HIP2101EIB
- Description:
- IC DRVR HALF BRDG 100V 8EP-SOIC
- Datasheet:
- HIP2101EIB
Intersil HIP2101EIB technical specifications, attributes, parameters and parts with similar specifications to Intersil HIP2101EIB.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width) Exposed Pad
- Surface MountYES
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)2 (1 Year)
- Number of Terminations8
- Terminal FinishTIN LEAD
- Voltage - Supply9V~14V
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)240
- Number of Functions1
- Supply Voltage12V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count8
- JESD-30 CodeR-PDSO-G8
- Qualification StatusCOMMERCIAL
- Input TypeNon-Inverting
- Rise / Fall Time (Typ)10ns 10ns
- Channel TypeIndependent
- Number of Drivers2
- Turn On Time0.056 µs
- Output Peak Current Limit-Nom2A
- Driven ConfigurationHalf-Bridge
- Gate TypeN-Channel MOSFET
- Current - Peak Output (Source, Sink)2A 2A
- High Side DriverYES
- Logic Voltage - VIL, VIH0.8V 2.2V
- Turn Off Time0.056 µs
- High Side Voltage - Max (Bootstrap)114V
- Height Seated (Max)1.68mm
- Length4.89mm
- Width3.9mm
- RoHS StatusNon-RoHS Compliant
HIP2101EIB Overview
The package or case for this electronic component is an 8-SOIC, with a width of 0.154 inches and 3.90mm. It also has an exposed pad, which allows for better heat dissipation and improved performance. The packaging for this component is in a tube, which provides protection during shipping and handling. The terminal finish is TIN LEAD, which is a common choice for electronic components due to its low cost and good solderability. The terminal form is GULL WING, which allows for easy mounting on a circuit board. The reflow temperature is not specified, so it is important to follow the manufacturer's recommendations. This component has 8 pins and a rise/fall time of 10ns 10ns, making it suitable for high-speed applications. It also has a peak output current of 2A 2A, making it a powerful component. The high side driver feature allows for efficient control of the output. The maximum seated height is 1.68mm, making it a compact and space-saving component. Overall, this package offers a combination of performance and convenience in a compact form.
HIP2101EIB Features
Embedded in the Tube package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 114V
HIP2101EIB Applications
There are a lot of Rochester Electronics, LLC HIP2101EIB gate drivers applications.
A/D drivers
Automotive Applications
Multicolor LED/laser displays
Industrial Power Supplies
Pulse transformer drivers
Isolated Supplies for Motor Control
PCMCIA applications
Isolated switch mode power supplies (SMPS)
Digitally controlled power supplies
AC-DC Inverters
The package or case for this electronic component is an 8-SOIC, with a width of 0.154 inches and 3.90mm. It also has an exposed pad, which allows for better heat dissipation and improved performance. The packaging for this component is in a tube, which provides protection during shipping and handling. The terminal finish is TIN LEAD, which is a common choice for electronic components due to its low cost and good solderability. The terminal form is GULL WING, which allows for easy mounting on a circuit board. The reflow temperature is not specified, so it is important to follow the manufacturer's recommendations. This component has 8 pins and a rise/fall time of 10ns 10ns, making it suitable for high-speed applications. It also has a peak output current of 2A 2A, making it a powerful component. The high side driver feature allows for efficient control of the output. The maximum seated height is 1.68mm, making it a compact and space-saving component. Overall, this package offers a combination of performance and convenience in a compact form.
HIP2101EIB Features
Embedded in the Tube package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 114V
HIP2101EIB Applications
There are a lot of Rochester Electronics, LLC HIP2101EIB gate drivers applications.
A/D drivers
Automotive Applications
Multicolor LED/laser displays
Industrial Power Supplies
Pulse transformer drivers
Isolated Supplies for Motor Control
PCMCIA applications
Isolated switch mode power supplies (SMPS)
Digitally controlled power supplies
AC-DC Inverters
HIP2101EIB More Descriptions
100V/2A Peak High-Frequency Half Bridge Driver with TTL Logic Inputs
Half Bridge MOSFET 2A 9V~14V 2A SOIC-8-EP Gate Drive ICs ROHS
100V HALF BRIDGE DRIVER, 8LD EPSOIC
IC,Dual MOSFET Driver,CMOS,SOP,8PIN,PLASTIC
IC DRVR HALF BRDG 100V 8EP-SOIC
Gate Drivers 100V H-BRDG DRVR 8LD EP
HALF BRIDGE BASED MOSFET DRIVER
Half Bridge MOSFET 2A 9V~14V 2A SOIC-8-EP Gate Drive ICs ROHS
100V HALF BRIDGE DRIVER, 8LD EPSOIC
IC,Dual MOSFET Driver,CMOS,SOP,8PIN,PLASTIC
IC DRVR HALF BRDG 100V 8EP-SOIC
Gate Drivers 100V H-BRDG DRVR 8LD EP
HALF BRIDGE BASED MOSFET DRIVER
The three parts on the right have similar specifications to HIP2101EIB.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishVoltage - SupplyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageReflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusInput TypeRise / Fall Time (Typ)Channel TypeNumber of DriversTurn On TimeOutput Peak Current Limit-NomDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)High Side DriverLogic Voltage - VIL, VIHTurn Off TimeHigh Side Voltage - Max (Bootstrap)Height Seated (Max)LengthWidthRoHS StatusTerminal PitchSupplier Device PackageFactory Lead TimeECCN CodeBase Part NumberView Compare
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HIP2101EIBSurface Mount8-SOIC (0.154, 3.90mm Width) Exposed PadYES-55°C~150°C TJTubee0noObsolete2 (1 Year)8TIN LEAD9V~14VDUALGULL WING240112VNOT SPECIFIED8R-PDSO-G8COMMERCIALNon-Inverting10ns 10nsIndependent20.056 µs2AHalf-BridgeN-Channel MOSFET2A 2AYES0.8V 2.2V0.056 µs114V1.68mm4.89mm3.9mmNon-RoHS Compliant------
-
Surface Mount12-VFDFN Exposed PadYES-55°C~150°C TJTubee3yesObsolete3 (168 Hours)12MATTE TIN9V~14VDUALNO LEAD260112V3012-COMMERCIALNon-Inverting10ns 10nsIndependent20.045 µs2AHalf-BridgeN-Channel MOSFET2A 2AYES4V 7V0.045 µs114V0.9mm4mm4mmROHS3 Compliant0.5mm----
-
Surface Mount10-WDFN Exposed Pad--55°C~150°C TJTube--Obsolete2 (1 Year)--8V~14V---------Inverting10ns 10nsSynchronous2--Half-BridgeN-Channel MOSFET2A 2A-1.4V 2.2V-114V---ROHS3 Compliant-10-TDFN (4x4)---
-
Surface Mount12-VFDFN Exposed PadYES-55°C~150°C TJTubee3-Active3 (168 Hours)12Matte Tin (Sn) - annealed9V~14VDUALNO LEADNOT SPECIFIED112VNOT SPECIFIED12--Non-Inverting10ns 10nsIndependent20.056 µs-Half-BridgeN-Channel MOSFET2A 2AYES0.8V 2.2V0.056 µs114V1mm4mm4mmROHS3 Compliant0.5mm-10 WeeksEAR99HIP2101
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