Fairchild/ON Semiconductor HGTG40N60A4

Name: HGTG40N60A4
Brand: Fairchild/ON Semiconductor
SKU: 2494802-HGTG40N60A4
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: HGTG40N60A4

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2494802-HGTG40N60A4

Description:: IGBT 600V 75A 625W TO247

ECAD Model:

Datasheet:: HGTG40N60A4

Specifications

Fairchild/ON Semiconductor HGTG40N60A4 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor HGTG40N60A4.

Lifecycle Status
ACTIVE, NOT REC (Last Updated: 2 days ago)
Factory Lead Time
44 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
6.39g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2015
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
LOW CONDUCTION LOSS
HTS Code
8541.29.00.95
Voltage - Rated DC
600V
Max Power Dissipation
625W
Current Rating
40A
Number of Elements
1
Element Configuration
Single
Power Dissipation
625W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
25 ns
Transistor Application
POWER CONTROL
Rise Time
18ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
145 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
75A
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.7V
Turn On Time
47 ns
Test Condition
390V, 40A, 2.2 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 40A
Continuous Collector Current
75A
Turn Off Time-Nom (toff)
240 ns
Gate Charge
350nC
Current - Collector Pulsed (Icm)
300A
Td (on/off) @ 25°C
25ns/145ns
Switching Energy
400μJ (on), 370μJ (off)
Height
20.82mm
Length
15.87mm
Width
4.82mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

HGTG40N60A4 Description HGTG40N60A4 IGBT is a MOS-gated switcher that operates the best features of high input impedance. ON Semiconductor HGTG40N60A4 features the high impedance at the input of a MOSFET and the reduced on-state conduction loss that is typical of the bipolar transistor. HGTG40N60A4 circuit is ideal for various high voltage switching applications that operate at moderate frequencies, where the lowest conduction losses can be essential. HGTG40N60A4 Features High input impedance Low Saturation Voltage Typical Fall Time Low Conduction Loss HGTG40N60A4 Applications Motion Control Sewing machine CNC Motor control Home appliances

HGTG40N60A4 More Descriptions

Trans IGBT Chip N=-CH 600V 75A 625000mW 3-Pin(3 Tab) TO-247 Rail
HGTG40N60A4 Series 600 V 75 A Flange Mount SMPS N-Channel IGBT - TO-247
Collector Current:75A; Power Dissipation:625W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Msl:- Rohs Compliant: Yes |Onsemi HGTG40N60A4.
IGBT, N TO-247; DC Collector Current: 75A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 625W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating
The HGTG40N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.

Product Comparison

The three parts on the right have similar specifications to HGTG40N60A4.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Voltage - Rated DC

Max Power Dissipation

Current Rating

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Input Type

Turn On Delay Time

Transistor Application

Rise Time

Polarity/Channel Type

Turn-Off Delay Time

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Continuous Collector Current

Turn Off Time-Nom (toff)

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Contact Plating

Subcategory

Base Part Number

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

REACH SVHC

Polarity

Reverse Recovery Time

Voltage - Collector Emitter Breakdown (Max)

IGBT Type

Fall Time-Max (tf)

Reach Compliance Code

Power - Max

Current - Collector (Ic) (Max)

View Compare
HGTG40N60A4

Fairchild/ON Semiconductor

ACTIVE, NOT REC (Last Updated: 2 days ago)

44 Weeks

Through Hole

Through Hole

TO-247-3

3

6.39g

SILICON

-55°C~150°C TJ

Tube

2015

e3

yes

Not For New Designs

1 (Unlimited)

3

EAR99

Tin (Sn)

LOW CONDUCTION LOSS

8541.29.00.95

600V

625W

40A

1

Single

625W

COLLECTOR

Standard

25 ns

POWER CONTROL

18ns

N-CHANNEL

145 ns

600V

75A

600V

1.7V

47 ns

390V, 40A, 2.2 Ω, 15V

2.7V @ 15V, 40A

75A

240 ns

350nC

300A

25ns/145ns

400μJ (on), 370μJ (off)

20.82mm

15.87mm

4.82mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
HGTG20N60A4

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

4 Weeks

Through Hole

Through Hole

TO-247-3

3

6.39g

SILICON

-55°C~150°C TJ

Tube

2011

e3

yes

Active

1 (Unlimited)

3

EAR99

-

LOW CONDUCTION LOSS

8541.29.00.95

600V

290W

70A

1

Single

290W

COLLECTOR

Standard

15 ns

POWER CONTROL

12ns

N-CHANNEL

73 ns

600V

70A

600V

1.8V

28 ns

390V, 20A, 3 Ω, 15V

2.7V @ 15V, 20A

-

160 ns

142nC

280A

15ns/73ns

105μJ (on), 150μJ (off)

20.82mm

15.87mm

4.82mm

No

ROHS3 Compliant

Lead Free

Tin

Insulated Gate BIP Transistors

HGTG20N60

20V

7V

No SVHC

-

-

-

-

-

-

-

-

HGTG40N60A4 vs HGTG20N60A4
HGTG18N120BND

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

10 Weeks

Through Hole

Through Hole

TO-247-3

3

6.39g

SILICON

-55°C~150°C TJ

Tube

2011

-

yes

Active

1 (Unlimited)

3

EAR99

-

LOW CONDUCTION LOSS

8541.29.00.95

1.2kV

390W

54A

1

Single

390W

-

Standard

23 μs

MOTOR CONTROL

22ns

-

170 μs

1.2kV

54A

1.2kV

2.45V

38 ns

960V, 18A, 3 Ω, 15V

2.7V @ 15V, 18A

-

345 ns

165nC

160A

23ns/170ns

1.9mJ (on), 1.8mJ (off)

20.82mm

15.87mm

4.82mm

No

ROHS3 Compliant

Lead Free

-

Insulated Gate BIP Transistors

-

20V

-

No SVHC

NPN

75 ns

1200V

NPT

200ns

-

-

-

HGTG40N60A4 vs HGTG18N120BND
HGTG11N120CN

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-247-3

-

-

-

-55°C~150°C TJ

Tube

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

Standard

-

-

-

-

-

-

-

-

-

-

960V, 11A, 10 Ω, 15V

2.4V @ 15V, 11A

-

-

100nC

80A

23ns/180ns

400μJ (on), 1.3mJ (off)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1200V

NPT

-

compliant

298W

43A

HGTG40N60A4 vs HGTG11N120CN