H11AG3W

Fairchild/ON Semiconductor H11AG3W

Part Number:
H11AG3W
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3318852-H11AG3W
Description:
OPTOISO 5.3KV TRANS W/BASE 6DIP
ECAD Model:
Datasheet:
H11AG1/2/3

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Specifications
Fairchild/ON Semiconductor H11AG3W technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor H11AG3W.
  • Mounting Type
    Through Hole
  • Package / Case
    6-DIP (0.400, 10.16mm)
  • Supplier Device Package
    6-DIP
  • Operating Temperature
    -55°C~100°C
  • Packaging
    Tube
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Voltage - Isolation
    5300Vrms
  • Output Type
    Transistor with Base
  • Number of Channels
    1
  • Voltage - Forward (Vf) (Typ)
    1.5V Max
  • Input Type
    DC
  • Current - Output / Channel
    50mA
  • Voltage - Output (Max)
    30V
  • Current - DC Forward (If) (Max)
    50mA
  • Current Transfer Ratio (Min)
    20% @ 1mA
  • Turn On / Turn Off Time (Typ)
    5μs, 5μs
  • Vce Saturation (Max)
    400mV
Description
H11AG3W Overview
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Optoisolators - Transistor, Photovoltaic Output. The images we provide are for reference only, for detailed product information please see specification sheet H11AG3W or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of H11AG3W. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
H11AG3W More Descriptions
OptoCouplers & OptoIsolators Optocoupler LC Phototransistor
OPTOISO 5.3KV TRANS W/BASE 6DIP
French Electronic Distributor since 1988
The H11AG series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled with a silicon photo transistor in a dual in-line package. This device provides the unique feature of the high current transfer ratio at both low output voltage and low input current. This makes it ideal for use in low power logic circuits, telecommunications equipment and portable electronics isolation applications.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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