Diodes Incorporated FZT558TA
- Part Number:
- FZT558TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2462770-FZT558TA
- Description:
- TRANS PNP 400V 0.2A SOT223
- Datasheet:
- FZT558TA
Diodes Incorporated FZT558TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FZT558TA.
- Factory Lead Time13 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2006
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-400V
- Max Power Dissipation2W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codenot_compliant
- Current Rating-200mA
- Frequency50MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFZT558
- JESD-30 CodeR-PDSO-G4
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation3W
- Case ConnectionCOLLECTOR
- Power - Max2W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product50MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)400V
- Max Collector Current200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 50mA 10V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic500mV @ 6mA, 50mA
- Collector Emitter Breakdown Voltage400V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage-500mV
- Max Breakdown Voltage400V
- Collector Base Voltage (VCBO)400V
- Emitter Base Voltage (VEBO)-5V
- Continuous Collector Current-200mA
- Height1.65mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FZT558TA Overview
DC current gain in this device equals 100 @ 50mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 6mA, 50mA.Single BJT transistor is essential to maintain the continuous collector voltage at -200mA to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -200mA current rating.As a result, the part has a transition frequency of 50MHz.Breakdown input voltage is 400V volts.In extreme cases, the collector current can be as low as 200mA volts.
FZT558TA Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 6mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 50MHz
FZT558TA Applications
There are a lot of Diodes Incorporated
FZT558TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 100 @ 50mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 6mA, 50mA.Single BJT transistor is essential to maintain the continuous collector voltage at -200mA to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -200mA current rating.As a result, the part has a transition frequency of 50MHz.Breakdown input voltage is 400V volts.In extreme cases, the collector current can be as low as 200mA volts.
FZT558TA Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 6mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 50MHz
FZT558TA Applications
There are a lot of Diodes Incorporated
FZT558TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FZT558TA More Descriptions
FZT558 Series 400 V 200 mA PNP Silicon Planar Medium Power Transistor SOT-223-3
Trans GP BJT PNP 400V 0.2A Automotive 4-Pin(3 Tab) SOT-223 T/R
PNP Transistor,200mA,400V,2W, SOT223 | Diodes Inc FZT558TA
PNP TRANSISTOR 400V 0,2A SOT223
Power Bipolar Transistor, 0.2A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
Bipolar Transistors - BJT PNP High Voltage
TRANSISTOR, PNP, 400V, SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency Typ ft:50MHz; Power Dissipation Pd:2W; DC Collector Current:200mA; DC Current Gain hFE:100; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:200mV; Current Ic Continuous a Max:200mA; Gain Bandwidth ft Typ:50MHz; Hfe Min:100; Package / Case:SOT-223; Power Dissipation Pd:2W; Termination Type:SMD
Trans GP BJT PNP 400V 0.2A Automotive 4-Pin(3 Tab) SOT-223 T/R
PNP Transistor,200mA,400V,2W, SOT223 | Diodes Inc FZT558TA
PNP TRANSISTOR 400V 0,2A SOT223
Power Bipolar Transistor, 0.2A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
Bipolar Transistors - BJT PNP High Voltage
TRANSISTOR, PNP, 400V, SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency Typ ft:50MHz; Power Dissipation Pd:2W; DC Collector Current:200mA; DC Current Gain hFE:100; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:200mV; Current Ic Continuous a Max:200mA; Gain Bandwidth ft Typ:50MHz; Hfe Min:100; Package / Case:SOT-223; Power Dissipation Pd:2W; Termination Type:SMD
The three parts on the right have similar specifications to FZT558TA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeQualification StatusNumber of ElementsElement ConfigurationPower DissipationCase ConnectionPower - MaxTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRoHS StatusLead FreeHTS CodeCurrent - Collector (Ic) (Max)Pin CountVoltage - Collector Emitter Breakdown (Max)Radiation HardeningContact PlatingView Compare
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FZT558TA13 WeeksSurface MountSurface MountTO-261-4, TO-261AA37.994566mgSILICON-55°C~150°C TJCut Tape (CT)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)Other Transistors-400V2WDUALGULL WING260not_compliant-200mA50MHz40FZT558R-PDSO-G4Not Qualified1Single3WCOLLECTOR2WSWITCHING50MHzPNPPNP400V200mA100 @ 50mA 10V100nA500mV @ 6mA, 50mA400V50MHz-500mV400V400V-5V-200mA1.65mm6.7mm3.7mmNo SVHCROHS3 CompliantLead Free-------
-
-Surface MountSurface MountTO-261-4, TO-261AA-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3-Obsolete1 (Unlimited)4EAR99MATTE TIN--60V2WDUALGULL WING260unknown-1A-40FZT591R-PDSO-G4Not Qualified1Single-COLLECTOR-SWITCHING150MHzPNPPNP600mV1A100 @ 500mA 5V100nA600mV @ 100mA, 1A60V150MHz--80V-5V-1A1.65mm6.7mm3.7mmNo SVHCRoHS CompliantLead Free8541.29.00.751A----
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-Surface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJCut Tape (CT)2012e3noDiscontinued1 (Unlimited)4EAR99Matte Tin (Sn)Other Transistors-40V2WDUALGULL WING260--1A150MHz40---1Single2WCOLLECTOR--150MHzPNPPNP40V1A300 @ 100mA 5V100nA500mV @ 100mA, 1A40V150MHz-500mV40V40V-7V-1A1.65mm6.7mm3.7mmNo SVHCROHS3 CompliantLead Free--4140VNo-
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15 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99---30V2WDUALGULL WING260--1A100MHz40FZT549--1Single2WCOLLECTOR-SWITCHING100MHzPNPPNP30V1A100 @ 500mA 2V100nA750mV @ 200mA, 2A30V100MHz-750mV30V35V5V-1A1.65mm6.7mm3.7mmNo SVHCROHS3 CompliantLead Free----NoTin
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