Diodes Incorporated FZT458TA
- Part Number:
- FZT458TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2462761-FZT458TA
- Description:
- TRANS NPN 400V 0.3A SOT-223
- Datasheet:
- FZT458TA
Diodes Incorporated FZT458TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FZT458TA.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2006
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC400V
- Max Power Dissipation2W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating300mA
- Frequency50MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFZT458
- JESD-30 CodeR-PDSO-G4
- Number of Elements1
- Voltage400V
- Element ConfigurationSingle
- Current3A
- Power Dissipation3W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product50MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)400V
- Max Collector Current300mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 50mA 10V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic500mV @ 6mA, 50mA
- Collector Emitter Breakdown Voltage400V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage400V
- Collector Base Voltage (VCBO)400V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current300mA
- Height1.65mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FZT458TA Overview
In this device, the DC current gain is 100 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 6mA, 50mA.Maintaining the continuous collector voltage at 300mA is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (300mA).50MHz is present in the transition frequency.An input voltage of 400V volts is the breakdown voltage.Maximum collector currents can be below 300mA volts.
FZT458TA Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 6mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 300mA
a transition frequency of 50MHz
FZT458TA Applications
There are a lot of Diodes Incorporated
FZT458TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 100 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 6mA, 50mA.Maintaining the continuous collector voltage at 300mA is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (300mA).50MHz is present in the transition frequency.An input voltage of 400V volts is the breakdown voltage.Maximum collector currents can be below 300mA volts.
FZT458TA Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 6mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 300mA
a transition frequency of 50MHz
FZT458TA Applications
There are a lot of Diodes Incorporated
FZT458TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FZT458TA More Descriptions
Trans Gp Bjt NPN 400V 0.3A 3000MW 4-PIN(3 TAB) SOT-223 T/r / Trans NPN 400V 0.3A SOT-223
FZT458 Series NPN 0.3 A 400 V SMT Silicon High Voltage Transistor - SOT-223
NPN Transistor,300mA,400V, SOT223 | Diodes Inc FZT458TA
Power Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
TRANSISTOR, NPN, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:2W; DC Collector Current:300mA; DC Current Gain hFE:100; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-223; No. of Pins:3; Collector Emitter Voltage Vces:200mV; Current Ic Continuous a Max:300mA; Gain Bandwidth ft Typ:50MHz; Hfe Min:100; Package / Case:SOT-223; Power Dissipation Pd:2W; Termination Type:SMD
FZT458 Series NPN 0.3 A 400 V SMT Silicon High Voltage Transistor - SOT-223
NPN Transistor,300mA,400V, SOT223 | Diodes Inc FZT458TA
Power Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
TRANSISTOR, NPN, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:2W; DC Collector Current:300mA; DC Current Gain hFE:100; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-223; No. of Pins:3; Collector Emitter Voltage Vces:200mV; Current Ic Continuous a Max:300mA; Gain Bandwidth ft Typ:50MHz; Hfe Min:100; Package / Case:SOT-223; Power Dissipation Pd:2W; Termination Type:SMD
The three parts on the right have similar specifications to FZT458TA.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeNumber of ElementsVoltageElement ConfigurationCurrentPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeFactory Lead TimeReach Compliance CodeQualification StatusHTS CodeConfigurationhFE MinView Compare
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FZT458TASurface MountSurface MountTO-261-4, TO-261AA37.994566mgSILICON-55°C~150°C TJCut Tape (CT)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)Other Transistors400V2WDUALGULL WING260300mA50MHz40FZT458R-PDSO-G41400VSingle3A3WCOLLECTORSWITCHING50MHzNPNNPN400V300mA100 @ 50mA 10V100nA500mV @ 6mA, 50mA400V50MHz500mV400V400V5V300mA1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free-------
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Surface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)Other Transistors60V2WDUALGULL WING2601A150MHz30FZT491-1-Single-3WCOLLECTORSWITCHING150MHzNPNNPN60V1A100 @ 500mA 5V100nA500mV @ 100mA, 1A60V150MHz160mV60V80V5V1A1.65mm6.7mm3.7mm--ROHS3 CompliantLead Free13 Weeksnot_compliantNot Qualified---
-
Surface MountSurface MountTO-261-4, TO-261AA-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3-Obsolete1 (Unlimited)4EAR99MATTE TIN-60V2WDUALGULL WING2601A-40FZT491R-PDSO-G41----COLLECTORSWITCHING150MHzNPNNPN500mV1A100 @ 500mA 5V100nA500mV @ 100mA, 1A60V150MHz160mV-80V5V1A-----RoHS CompliantLead Free-unknownNot Qualified8541.29.00.75SINGLE100
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Surface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJCut Tape (CT)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)Other Transistors30V2WDUALGULL WING2601A150MHz40FZT489-1-Single-2WCOLLECTOR-150MHzNPNNPN30V1A100 @ 1A 2V100nA600mV @ 200mA, 2A30V150MHz600mV30V50V5V-1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free15 Weeks-----
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