Fairchild/ON Semiconductor FQH90N15
- Part Number:
- FQH90N15
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 4538929-FQH90N15
- Description:
- MOSFET N-CH 150V 90A TO-247
- Datasheet:
- FQH90N15
Fairchild/ON Semiconductor FQH90N15 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQH90N15.
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Supplier Device PackageTO-247-3
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesQFET®
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max375W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs18mOhm @ 45A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds8700pF @ 25V
- Current - Continuous Drain (Id) @ 25°C90A Tc
- Gate Charge (Qg) (Max) @ Vgs285nC @ 10V
- Drain to Source Voltage (Vdss)150V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±25V
FQH90N15 Description
The N-Channel enhancement mode power field-effect transistors were created utilizing the exclusive planar stripe DMOS process developed by Fairchild. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high-energy pulses. These devices are ideal for low voltage tasks like DC motor control, high efficiency switching for DC/DC converters, and audio amplifiers. They also provide a steady supply of power.
FQH90N15 Features
90A, 150V, RDS(on) = 0.018Ω @VGS = 10 V
Low gate charge (typical 220 NC)
Low Cross (typical 200 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175°C maximum junction temperature rating
FQH90N15 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
The N-Channel enhancement mode power field-effect transistors were created utilizing the exclusive planar stripe DMOS process developed by Fairchild. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high-energy pulses. These devices are ideal for low voltage tasks like DC motor control, high efficiency switching for DC/DC converters, and audio amplifiers. They also provide a steady supply of power.
FQH90N15 Features
90A, 150V, RDS(on) = 0.018Ω @VGS = 10 V
Low gate charge (typical 220 NC)
Low Cross (typical 200 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175°C maximum junction temperature rating
FQH90N15 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
FQH90N15 More Descriptions
MOSFET N-CH 150V 90A TO-247
MOSFETs NCH/150V/90A/QFET
OEMs, CMs ONLY (NO BROKERS)
150V N-Channel QFET
MOSFETs NCH/150V/90A/QFET
OEMs, CMs ONLY (NO BROKERS)
150V N-Channel QFET
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