Diodes Incorporated FMMT625TA

FMMT625TA Overview
In this device, the DC current gain is 300 @ 200mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 180mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 50mA, 1A.A 1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 135MHz.Input voltage breakdown is available at 150V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

FMMT625TA Features
the DC current gain for this device is 300 @ 200mA 10V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 135MHz


FMMT625TA Applications
There are a lot of Diodes Incorporated
FMMT625TA applications of single BJT transistors.


Inverter
Interface
Driver
Muting