Diodes Incorporated FMMT596TA
- Part Number:
- FMMT596TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2462731-FMMT596TA
- Description:
- TRANS PNP 200V 0.3A SOT23-3
- Datasheet:
- FMMT596TA
Diodes Incorporated FMMT596TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FMMT596TA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- SubcategoryOther Transistors
- Voltage - Rated DC-200V
- Max Power Dissipation500mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-500mA
- Frequency150MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFMMT596
- Number of Elements1
- Voltage200V
- Element ConfigurationSingle
- Current3A
- Power Dissipation500mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product150MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)200V
- Max Collector Current300mA
- DC Current Gain (hFE) (Min) @ Ic, Vce85 @ 250mA 10V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic350mV @ 25mA, 250mA
- Collector Emitter Breakdown Voltage200V
- Transition Frequency150MHz
- Collector Emitter Saturation Voltage-350mV
- Max Breakdown Voltage200V
- Collector Base Voltage (VCBO)220V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current-300mA
- Height1.02mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FMMT596TA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 85 @ 250mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -350mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 350mV @ 25mA, 250mA.Single BJT transistor is recommended to keep the continuous collector voltage at -300mA in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 150MHz.The breakdown input voltage is 200V volts.Single BJT transistor is possible to have a collector current as low as 300mA volts at Single BJT transistors maximum.
FMMT596TA Features
the DC current gain for this device is 85 @ 250mA 10V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 350mV @ 25mA, 250mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 150MHz
FMMT596TA Applications
There are a lot of Diodes Incorporated
FMMT596TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 85 @ 250mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -350mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 350mV @ 25mA, 250mA.Single BJT transistor is recommended to keep the continuous collector voltage at -300mA in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 150MHz.The breakdown input voltage is 200V volts.Single BJT transistor is possible to have a collector current as low as 300mA volts at Single BJT transistors maximum.
FMMT596TA Features
the DC current gain for this device is 85 @ 250mA 10V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 350mV @ 25mA, 250mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 150MHz
FMMT596TA Applications
There are a lot of Diodes Incorporated
FMMT596TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FMMT596TA More Descriptions
200V 500mW 85@250mA,10V 300mA PNP SOT-23 Bipolar Transistors - BJT ROHS
FMMT596 Series PNP 0.3 A 200 V SMT Silicon High Voltage Transistor - SOT-23
Small Signal Bipolar Transistor, 0.3A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 200V 0.3A Automotive 3-Pin SOT-23 T/R
PNP High Voltage Transistor; 300mA; SOT23
Bipolar Transistors - BJT PNP Medium Power
FMMT596 Series PNP 0.3 A 200 V SMT Silicon High Voltage Transistor - SOT-23
Small Signal Bipolar Transistor, 0.3A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 200V 0.3A Automotive 3-Pin SOT-23 T/R
PNP High Voltage Transistor; 300mA; SOT23
Bipolar Transistors - BJT PNP Medium Power
The three parts on the right have similar specifications to FMMT596TA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberNumber of ElementsVoltageElement ConfigurationCurrentPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeHTS CodeReach Compliance CodePin CountReference StandardJESD-30 CodeQualification StatusConfigurationPower - MaxFrequency - TransitionVCEsat-MaxTurn Off Time-Max (toff)Turn On Time-Max (ton)Collector-Base Capacitance-MaxPolarityView Compare
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FMMT596TA15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJCut Tape (CT)2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealedOther Transistors-200V500mWDUALGULL WING260-500mA150MHz40FMMT5961200VSingle3A500mWSWITCHING150MHzPNPPNP200V300mA85 @ 250mA 10V100nA350mV @ 25mA, 250mA200V150MHz-350mV200V220V5V-300mA1.02mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free---------------
-
-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)3EAR99MATTE TIN-80V330mWDUALGULL WING260500mA-40FMMTA061-Single---100MHzNPNNPN250mV500mA50 @ 10mA 1V100nA250mV @ 10mA, 100mA80V100MHz250mV-80V4V500mA1mm3.05mm1.4mmNo SVHC-RoHS CompliantLead Free8541.21.00.95unknown3CECC50002-240R-PDSO-G3Not Qualified--------
-
13 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJTape & Reel (TR)2014e3-Active1 (Unlimited)3EAR99Matte Tin (Sn)--625mWDUALGULL WING-----1----SWITCHING-PNPPNP330mV1A250 @ 500mA 10V100nA330mV @ 150mA, 1A100V200MHz----------ROHS3 Compliant----AEC-Q101R-PDSO-G3-SINGLE625mW200MHz0.33 V760ns50ns20pF-
-
15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed-100V330mWDUALGULL WING260500mA40MHz40FMMT4151-Single-330mWSWITCHING40MHz-NPN - Avalanche Mode100V500mA25 @ 10mA 10V100nA ICBO500mV @ 1mA, 10mA100V40MHz500mV100V320V6V500mA1.1mm3mm1.4mmNo SVHCNoROHS3 CompliantLead Free-------------NPN
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