Diodes Incorporated FMMT593TA
- Part Number:
- FMMT593TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2462767-FMMT593TA
- Description:
- TRANS PNP 100V 1A SOT23-3
- Datasheet:
- FMMT593TA
Diodes Incorporated FMMT593TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FMMT593TA.
- Factory Lead Time15 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published1997
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-100V
- Max Power Dissipation500mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-1A
- Frequency50MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFMMT593
- Number of Elements1
- Voltage100V
- Element ConfigurationSingle
- Current1A
- Power Dissipation500mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product50MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)-100V
- Max Collector Current-1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 500mA 5V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic300mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage-100V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage-300mV
- Max Breakdown Voltage100V
- Collector Base Voltage (VCBO)-120V
- Emitter Base Voltage (VEBO)-7V
- hFE Min100
- Max Junction Temperature (Tj)150°C
- Continuous Collector Current-1A
- Height1.1mm
- Length3mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FMMT593TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 500mA 5V.With a collector emitter saturation voltage of -300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 50mA, 500mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -1A.If the emitter base voltage is kept at -7V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1A.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 100V volts that it can take.Collector current can be as low as -1A volts at its maximum.
FMMT593TA Features
the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 50mA, 500mA
the emitter base voltage is kept at -7V
the current rating of this device is -1A
a transition frequency of 50MHz
FMMT593TA Applications
There are a lot of Diodes Incorporated
FMMT593TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 500mA 5V.With a collector emitter saturation voltage of -300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 50mA, 500mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -1A.If the emitter base voltage is kept at -7V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1A.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 100V volts that it can take.Collector current can be as low as -1A volts at its maximum.
FMMT593TA Features
the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 50mA, 500mA
the emitter base voltage is kept at -7V
the current rating of this device is -1A
a transition frequency of 50MHz
FMMT593TA Applications
There are a lot of Diodes Incorporated
FMMT593TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FMMT593TA More Descriptions
Bipolar (BJT) Transistor PNP 100V 1A 50MHz 500mW Surface Mount SOT-23-3
100V 500mW 100@500mA,5V 1A PNP SOT-23-3 Bipolar Transistors - BJT ROHS
FMMT593 Series PNP 1 A 100 V SMT Silicon High Voltage Transistor - SOT-23
Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 100V 1A 500mW 3-Pin SOT-23 T/R
Transistor, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:150MHz; Power Dissipation
Bipolar Transistor, Pnp, -100V; Transistor Polarity:Pnp; Collector Emitter Voltage Max:100V; Continuous Collector Current:1A; Power Dissipation:500Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:150Mhz Rohs Compliant: Yes |Diodes Inc. FMMT593TA
TRANSISTOR, PNP, SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 150MHz; Power Dissipation Pd: 500mW; DC Collector Current: -1A; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): -200mV; Continuous Collector Current Ic Max: 1A; Current Ic Continuous a Max: 1A; Current Ic hFE: 250mA; Device Marking: MT593; Gain Bandwidth ft Min: 50MHz; Gain Bandwidth ft Typ: 150MHz; Hfe Min: 100; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Ptot Max: 500mW; SMD Marking: 593; Tape Width: 8mm; Voltage Vcbo: 120V
100V 500mW 100@500mA,5V 1A PNP SOT-23-3 Bipolar Transistors - BJT ROHS
FMMT593 Series PNP 1 A 100 V SMT Silicon High Voltage Transistor - SOT-23
Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 100V 1A 500mW 3-Pin SOT-23 T/R
Transistor, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:150MHz; Power Dissipation
Bipolar Transistor, Pnp, -100V; Transistor Polarity:Pnp; Collector Emitter Voltage Max:100V; Continuous Collector Current:1A; Power Dissipation:500Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:150Mhz Rohs Compliant: Yes |Diodes Inc. FMMT593TA
TRANSISTOR, PNP, SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 150MHz; Power Dissipation Pd: 500mW; DC Collector Current: -1A; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): -200mV; Continuous Collector Current Ic Max: 1A; Current Ic Continuous a Max: 1A; Current Ic hFE: 250mA; Device Marking: MT593; Gain Bandwidth ft Min: 50MHz; Gain Bandwidth ft Typ: 150MHz; Hfe Min: 100; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Ptot Max: 500mW; SMD Marking: 593; Tape Width: 8mm; Voltage Vcbo: 120V
The three parts on the right have similar specifications to FMMT593TA.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberNumber of ElementsVoltageElement ConfigurationCurrentPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinMax Junction Temperature (Tj)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishJESD-30 CodeQualification StatusHTS CodeReach Compliance CodePin CountReference StandardPolarityCurrent - Collector (Ic) (Max)View Compare
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FMMT593TA15 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJCut Tape (CT)1997e3yesActive1 (Unlimited)3EAR99Other Transistors-100V500mWDUALGULL WING260-1A50MHz40FMMT5931100VSingle1A500mWSWITCHING50MHzPNPPNP-100V-1A100 @ 500mA 5V100nA300mV @ 50mA, 500mA-100V50MHz-300mV100V-120V-7V100150°C-1A1.1mm3mm1.4mmNo SVHCNoROHS3 CompliantLead Free----------
-
--Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)3EAR99-150V625mWDUALGULL WING2601A-40FMMT6251-Single--SWITCHING135MHzNPNNPN300mV1A300 @ 200mA 10V100nA300mV @ 50mA, 1A150V135MHz--150V5V--1A1mm3.05mm1.4mmNo SVHC-RoHS CompliantLead FreeMatte Tin (Sn) - annealedR-PDSO-G3Not Qualified------
-
--Surface MountSurface MountTO-236-3, SC-59, SOT-23-33-SILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)3EAR99-30V330mWDUALGULL WING260300mA-40FMMTA131-Single-330mWSWITCHING--NPN - Darlington900mV300mA10000 @ 100mA 5V100nA900mV @ 100μA, 100mA40V100MHz--40V10V--300mA---No SVHC-RoHS CompliantLead FreeMATTE TIN-Not Qualified8541.21.00.95unknown3CECCNPN-
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--Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mg--55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)--Other Transistors-12V625mW----2.5A--FMMT717--Single---110MHzPNPPNP220mV2.5A300 @ 100mA 2V100nA220mV @ 50mA, 2.5A12V80MHz-180mV--12V5V---2.5A1mm3.05mm1.4mmNo SVHC-RoHS CompliantLead FreeMatte Tin (Sn) - annealed----3--2.5A
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