Diodes Incorporated FMMT495TA
- Part Number:
- FMMT495TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2462711-FMMT495TA
- Description:
- TRANS NPN 150V 1A SOT23-3
- Datasheet:
- FMMT495TA
Diodes Incorporated FMMT495TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FMMT495TA.
- Factory Lead Time15 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC150V
- Max Power Dissipation500mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating1A
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFMMT495
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation500mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)150V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 250mA 10V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic300mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage150V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage300mV
- Max Breakdown Voltage150V
- Collector Base Voltage (VCBO)170V
- Emitter Base Voltage (VEBO)7V
- hFE Min100
- Max Junction Temperature (Tj)150°C
- Continuous Collector Current1A
- Height1.1mm
- Length3mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FMMT495TA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 250mA 10V DC current gain.As it features a collector emitter saturation voltage of 300mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 1A.Keeping the emitter base voltage at 7V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 150V volts.When collector current reaches its maximum, it can reach 1A volts.
FMMT495TA Features
the DC current gain for this device is 10 @ 250mA 10V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
the current rating of this device is 1A
a transition frequency of 100MHz
FMMT495TA Applications
There are a lot of Diodes Incorporated
FMMT495TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 250mA 10V DC current gain.As it features a collector emitter saturation voltage of 300mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 1A.Keeping the emitter base voltage at 7V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 150V volts.When collector current reaches its maximum, it can reach 1A volts.
FMMT495TA Features
the DC current gain for this device is 10 @ 250mA 10V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
the current rating of this device is 1A
a transition frequency of 100MHz
FMMT495TA Applications
There are a lot of Diodes Incorporated
FMMT495TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FMMT495TA More Descriptions
FMMT495 Series NPN 1 A 150 V SMT Silicon Medium Power Transistor - SOT-23
Small Signal Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon
Transistor NPN 1A 150V 100hfe SOT23 | Diodes Inc FMMT495TA
Trans GP BJT NPN 150V 1A 500mW 3-Pin SOT-23 T/R
Transistor, NPN, 150V, 1A, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:150V; Transition Frequency ft:100MHz; Power
TRANSISTOR, NPN, 150V, 1A, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 150V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 500mW; DC Collector Current: 1A; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Small Signal Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon
Transistor NPN 1A 150V 100hfe SOT23 | Diodes Inc FMMT495TA
Trans GP BJT NPN 150V 1A 500mW 3-Pin SOT-23 T/R
Transistor, NPN, 150V, 1A, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:150V; Transition Frequency ft:100MHz; Power
TRANSISTOR, NPN, 150V, 1A, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 150V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 500mW; DC Collector Current: 1A; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
The three parts on the right have similar specifications to FMMT495TA.
-
ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinMax Junction Temperature (Tj)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishPin CountCurrent - Collector (Ic) (Max)HTS CodeReach Compliance CodeReference StandardJESD-30 CodeQualification StatusPolarityView Compare
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FMMT495TA15 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJCut Tape (CT)2006e3yesActive1 (Unlimited)3EAR99Other Transistors150V500mWDUALGULL WING2601A100MHz40FMMT4951Single500mWSWITCHING100MHzNPNNPN150V1A10 @ 250mA 10V100nA300mV @ 50mA, 500mA150V100MHz300mV150V170V7V100150°C1A1.1mm3mm1.4mmNo SVHCNoROHS3 CompliantLead Free----------
-
--Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mg--55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)--Other Transistors-12V625mW----2.5A--FMMT717-Single--110MHzPNPPNP220mV2.5A300 @ 100mA 2V100nA220mV @ 50mA, 2.5A12V80MHz-180mV--12V5V---2.5A1mm3.05mm1.4mmNo SVHC-RoHS CompliantLead FreeMatte Tin (Sn) - annealed32.5A------
-
--Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)3EAR99-80V330mWDUALGULL WING260500mA-40FMMTA061Single--100MHzNPNNPN250mV500mA50 @ 10mA 1V100nA250mV @ 10mA, 100mA80V100MHz250mV-80V4V--500mA1mm3.05mm1.4mmNo SVHC-RoHS CompliantLead FreeMATTE TIN3-8541.21.00.95unknownCECC50002-240R-PDSO-G3Not Qualified-
-
15 Weeks-Surface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3yesActive1 (Unlimited)3EAR99-100V330mWDUALGULL WING260500mA40MHz40FMMT4151Single330mWSWITCHING40MHz-NPN - Avalanche Mode100V500mA25 @ 10mA 10V100nA ICBO500mV @ 1mA, 10mA100V40MHz500mV100V320V6V--500mA1.1mm3mm1.4mmNo SVHCNoROHS3 CompliantLead FreeMatte Tin (Sn) - annealed-------NPN
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