Diodes Incorporated FMMT458TA
- Part Number:
- FMMT458TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2462724-FMMT458TA
- Description:
- TRANS NPN 400V 0.225A SOT23-3
- Datasheet:
- FMMT458TA
Diodes Incorporated FMMT458TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FMMT458TA.
- Factory Lead Time15 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2017
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC400V
- Max Power Dissipation500mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating225mA
- Frequency50MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFMMT458
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation500mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product50MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)400V
- Max Collector Current225mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 50mA 10V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic500mV @ 6mA, 50mA
- Collector Emitter Breakdown Voltage400V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage400V
- Collector Base Voltage (VCBO)400V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current225mA
- Height1.1mm
- Length3mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FMMT458TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 50mA 10V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 6mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 225mA for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 225mA.In the part, the transition frequency is 50MHz.This device can take an input voltage of 400V volts before it breaks down.A maximum collector current of 225mA volts can be achieved.
FMMT458TA Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 6mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 225mA
a transition frequency of 50MHz
FMMT458TA Applications
There are a lot of Diodes Incorporated
FMMT458TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 50mA 10V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 6mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 225mA for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 225mA.In the part, the transition frequency is 50MHz.This device can take an input voltage of 400V volts before it breaks down.A maximum collector current of 225mA volts can be achieved.
FMMT458TA Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 6mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 225mA
a transition frequency of 50MHz
FMMT458TA Applications
There are a lot of Diodes Incorporated
FMMT458TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FMMT458TA More Descriptions
FMMT458 Series NPN 0.225 A 400 V SMT Silicon High Voltage Transistor - SOT-23
400V 500mW 100@50mA,10V 225mA NPN SOT-23 Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 0.225A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon
Diodes Inc FMMT458TA NPN Transistor, 225 mA, 400 V, 3-Pin SOT-23
Trans GP BJT NPN 400V 0.225A 500mW 3-Pin SOT-23 T/R
Transistor NPN FMMT458TA ZETEX RoHS milliampere=225 V=400 SOt23Halfin
Ss Hi Voltage Transistor Sot23 T&r 3K Rohs Compliant: Yes |Diodes Inc. FMMT458TA
Transistor, NPN, 400V, 0.225A, 0.5W; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:50MHz; Power
TRANS, NPN, 400V, 0.225A, 0.5W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 500mW; DC Collector Current: 225mA; DC Current Gain hFE: 15hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
400V 500mW 100@50mA,10V 225mA NPN SOT-23 Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 0.225A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon
Diodes Inc FMMT458TA NPN Transistor, 225 mA, 400 V, 3-Pin SOT-23
Trans GP BJT NPN 400V 0.225A 500mW 3-Pin SOT-23 T/R
Transistor NPN FMMT458TA ZETEX RoHS milliampere=225 V=400 SOt23Halfin
Ss Hi Voltage Transistor Sot23 T&r 3K Rohs Compliant: Yes |Diodes Inc. FMMT458TA
Transistor, NPN, 400V, 0.225A, 0.5W; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:50MHz; Power
TRANS, NPN, 400V, 0.225A, 0.5W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 500mW; DC Collector Current: 225mA; DC Current Gain hFE: 15hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
The three parts on the right have similar specifications to FMMT458TA.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishPin CountCurrent - Collector (Ic) (Max)HTS CodeReach Compliance CodeReference StandardJESD-30 CodeQualification StatusConfigurationPower - MaxFrequency - TransitionVCEsat-MaxTurn Off Time-Max (toff)Turn On Time-Max (ton)Collector-Base Capacitance-MaxView Compare
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FMMT458TA15 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2017e3yesActive1 (Unlimited)3EAR99Other Transistors400V500mWDUALGULL WING260225mA50MHz40FMMT4581Single500mWSWITCHING50MHzNPNNPN400V225mA100 @ 50mA 10V100nA500mV @ 6mA, 50mA400V50MHz500mV400V400V5V225mA1.1mm3mm1.4mmNo SVHCNoROHS3 CompliantLead Free----------------
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--Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mg--55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)--Other Transistors-12V625mW----2.5A--FMMT717-Single--110MHzPNPPNP220mV2.5A300 @ 100mA 2V100nA220mV @ 50mA, 2.5A12V80MHz-180mV--12V5V-2.5A1mm3.05mm1.4mmNo SVHC-RoHS CompliantLead FreeMatte Tin (Sn) - annealed32.5A------------
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--Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)3EAR99-80V330mWDUALGULL WING260500mA-40FMMTA061Single--100MHzNPNNPN250mV500mA50 @ 10mA 1V100nA250mV @ 10mA, 100mA80V100MHz250mV-80V4V500mA1mm3.05mm1.4mmNo SVHC-RoHS CompliantLead FreeMATTE TIN3-8541.21.00.95unknownCECC50002-240R-PDSO-G3Not Qualified-------
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13 Weeks-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJTape & Reel (TR)2014e3-Active1 (Unlimited)3EAR99--625mWDUALGULL WING-----1--SWITCHING-PNPPNP330mV1A250 @ 500mA 10V100nA330mV @ 150mA, 1A100V200MHz----------ROHS3 Compliant-Matte Tin (Sn)----AEC-Q101R-PDSO-G3-SINGLE625mW200MHz0.33 V760ns50ns20pF
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