Fairchild/ON Semiconductor FDS8928A

Name: FDS8928A
Brand: Fairchild/ON Semiconductor
SKU: 2847579-FDS8928A
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDS8928A

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2847579-FDS8928A

Description:: MOSFET N/P-CH 30V/20V 8SOIC

ECAD Model:

Datasheet:: FDS8928A

Specifications

Fairchild/ON Semiconductor FDS8928A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS8928A.

Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
230.4mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
30MOhm
Subcategory
Other Transistors
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
5.5A
Number of Elements
2
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
Power - Max
900mW
FET Type
N and P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
30m Ω @ 5.5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
900pF @ 10V
Current - Continuous Drain (Id) @ 25°C
5.5A 4A
Gate Charge (Qg) (Max) @ Vgs
28nC @ 4.5V
Rise Time
23ns
Drain to Source Voltage (Vdss)
30V 20V
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Fall Time (Typ)
90 ns
Turn-Off Delay Time
260 ns
Continuous Drain Current (ID)
5.5A
Threshold Voltage
670mV
Gate to Source Voltage (Vgs)
8V
Drain to Source Breakdown Voltage
-20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Nominal Vgs
670 mV
Height
1.5mm
Length
5mm
Width
4mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDS8928A Description
These dual N-channel and P-channel enhanced mode power field effect transistors are produced using proprietary high cell density DMOS technology. This high-density process is specially tailored to minimize on-resistance and provide excellent switching performance. These devices are particularly suitable for low-voltage applications, such as laptop power management and other battery-powered circuits, which require fast switching, low series power loss and anti-transient. FDS8928A Features
N-Channel 5.5A, 30V Max. RDS(on) = 30 mΩ at VGS = 4.5 V, Max. RDS(on) = 38 mΩ at VGS = 2.5 V P-Channel -4A, -20V Max. RDS(on) = 55 mΩ at VGS = -4.5 V Max. RDS(on) = 72 mΩ at VGS = -2.5 V High density cell design for extremely low RDS(ON) High power and current handling capability in a widely used surface mount package Dual (N & P-Channel) MOSFET in surface mount package Applications This product is general usage and suitable for many different applications.

FDS8928A More Descriptions

Trans MOSFET N/P-CH 30V/20V 5.5A/4A 8-Pin SOIC N T/R
Dual N & P-Channel Enhancement Mode Field Effect Transistor
Power Field-Effect Transistor, 5.5A I(D), 30V, 0.03ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, DUAL, NP, SMD, 8-SOIC; Transistor Polarity:N and P Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:670mV; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:5.5A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:670mV; Voltage Vgs Rds on Measurement:4.5V
These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Product Comparison

The three parts on the right have similar specifications to FDS8928A.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Max Power Dissipation

Terminal Position

Terminal Form

Current Rating

Number of Elements

Operating Mode

Power Dissipation

Power - Max

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Polarity/Channel Type

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

FET Technology

FET Feature

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Series

Published

Terminal Finish

Additional Feature

Element Configuration

Turn On Delay Time

Avalanche Energy Rating (Eas)

Termination

Dual Supply Voltage

Max Operating Temperature

Min Operating Temperature

Drain Current-Max (Abs) (ID)

View Compare
FDS8928A

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 6 days ago)

8 Weeks

Tin

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

230.4mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

8

EAR99

30MOhm

Other Transistors

2W

DUAL

GULL WING

5.5A

2

ENHANCEMENT MODE

2W

900mW

N and P-Channel

SWITCHING

30m Ω @ 5.5A, 4.5V

1V @ 250μA

900pF @ 10V

5.5A 4A

28nC @ 4.5V

23ns

30V 20V

N-CHANNEL AND P-CHANNEL

90 ns

260 ns

5.5A

670mV

8V

-20V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

670 mV

1.5mm

5mm

4mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
FDS89141

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 6 days ago)

11 Weeks

-

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

187mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

8

EAR99

62MOhm

FET General Purpose Power

31W

-

GULL WING

-

2

ENHANCEMENT MODE

31W

1.6W

2 N-Channel (Dual)

SWITCHING

62m Ω @ 3.5A, 10V

4V @ 250μA

398pF @ 50V

-

7.1nC @ 10V

1.4ns

100V

-

2.2 ns

9.8 ns

3.5A

3.1V

20V

100V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

-

1.5mm

4mm

5mm

No SVHC

No

ROHS3 Compliant

Lead Free

PowerTrench®

2010

Tin (Sn)

ULTRA-LOW RESISTANCE

Dual

5 ns

37 mJ

-

-

-

-

-

FDS8928A vs FDS89141
FDS8858CZ

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

18 Weeks

-

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

187mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

8

EAR99

17mOhm

Other Transistors

900mW

DUAL

GULL WING

-

2

ENHANCEMENT MODE

2W

-

N and P-Channel

SWITCHING

17m Ω @ 8.6A, 10V

3V @ 250μA

1205pF @ 15V

8.6A 7.3A

24nC @ 10V

10ns

-

N-CHANNEL AND P-CHANNEL

16 ns

33 ns

8.6A

1.6V

25V

-60V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

1.6 V

1.5mm

5mm

4mm

No SVHC

No

ROHS3 Compliant

Lead Free

PowerTrench®

2006

Tin (Sn)

-

-

-

-

SMD/SMT

30V

-

-

-

FDS8928A vs FDS8858CZ
FDS8958A

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 15 hours ago)

18 Weeks

Tin

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

-

-

-

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

8

-

28mOhm

-

2W

DUAL

GULL WING

7A

2

ENHANCEMENT MODE

2W

900mW

N and P-Channel

SWITCHING

28m Ω @ 7A, 10V

3V @ 250μA

575pF @ 15V

7A 5A

16nC @ 10V

13ns

-

N-CHANNEL AND P-CHANNEL

9 ns

14 ns

7A

1.9V

20V

30V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

1.9 V

1.5mm

5mm

4mm

No SVHC

No

ROHS3 Compliant

Lead Free

PowerTrench®

2007

-

-

-

-

54 mJ

SMD/SMT

30V

150°C

-55°C

7A

FDS8928A vs FDS8958A