FDS6574A

Fairchild/ON Semiconductor FDS6574A

Part Number:
FDS6574A
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2478212-FDS6574A
Description:
MOSFET N-CH 20V 16A 8-SOIC
ECAD Model:
Datasheet:
FDS6574A

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Specifications
Fairchild/ON Semiconductor FDS6574A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6574A.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    18 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    130mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    6MOhm
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    20V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    16A
  • Number of Elements
    1
  • Power Dissipation-Max
    2.5W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Turn On Delay Time
    19.5 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    6m Ω @ 16A, 4.5V
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    7657pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    16A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    105nC @ 4.5V
  • Rise Time
    22ns
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 4.5V
  • Vgs (Max)
    ±8V
  • Fall Time (Typ)
    82 ns
  • Turn-Off Delay Time
    173 ns
  • Continuous Drain Current (ID)
    16A
  • Threshold Voltage
    600mV
  • Gate to Source Voltage (Vgs)
    8V
  • Drain to Source Breakdown Voltage
    20V
  • Height
    1.5mm
  • Length
    5mm
  • Width
    4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDS6574A Description With FDS6574A N-Channel MOSFETs, DC/DC converters with conventional switching PWM controllers can be improved in terms of overall efficiency. The FDS6574A has been optimized to feature low gate charge, low RDS(ON), and fast switching speeds.
FDS6574A Features 16 A, 20 V
RoHS Compliant
Low gate charge
RDS(on) = 6 mΩ@ VGS = 4.5 V
RDS(on) = 7 mΩ @ VGS = 2.5 V
RDS(on) = 9 mΩ @ VGS = 1.8 V
High-performance trench technology for extremely low RDS(ON)
High power and current handling capability
FDS6574A Applications The product is intended for general usage and is suitable for a wide range of applications.
DC/DC Converters
Low-voltage
Battery-powered applications that demand little in-line power loss and quick switching
FDS6574A More Descriptions
N-Channel PowerTrench® MOSFET, 20V, 16A, 6mΩ
N-Channel 20 V 6 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
Trans MOSFET N-CH 20V 16A 8-Pin SOIC N T/R - Tape and Reel
MOSFET, N-CH, 20V, 16A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 16A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.004ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 600mV; Po
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Product Comparison
The three parts on the right have similar specifications to FDS6574A.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Configuration
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Case Connection
    Pulsed Drain Current-Max (IDM)
    Contact Plating
    Published
    View Compare
  • FDS6574A
    FDS6574A
    ACTIVE (Last Updated: 1 day ago)
    18 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    130mg
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e4
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    6MOhm
    Nickel/Palladium/Gold (Ni/Pd/Au)
    FET General Purpose Power
    20V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    16A
    1
    2.5W Ta
    Single
    ENHANCEMENT MODE
    2.5W
    19.5 ns
    N-Channel
    SWITCHING
    6m Ω @ 16A, 4.5V
    1.5V @ 250μA
    7657pF @ 10V
    16A Ta
    105nC @ 4.5V
    22ns
    1.8V 4.5V
    ±8V
    82 ns
    173 ns
    16A
    600mV
    8V
    20V
    1.5mm
    5mm
    4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDS6688S
    -
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    -
    -
    MATTE TIN
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    1
    2.5W Ta
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    6m Ω @ 16A, 10V
    3V @ 1mA
    3.29pF @ 15V
    16A Ta
    78nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    260
    NOT SPECIFIED
    8
    R-PDSO-G8
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    30V
    16A
    0.006Ohm
    30V
    -
    -
    -
    -
  • FDS6064N7
    -
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e4
    yes
    Obsolete
    1 (Unlimited)
    8
    -
    -
    NICKEL PALLADIUM GOLD
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    1
    3W Ta
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    3.5m Ω @ 23A, 4.5V
    1.5V @ 250μA
    7.191pF @ 10V
    23A Ta
    98nC @ 4.5V
    -
    1.8V 4.5V
    ±8V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    260
    NOT SPECIFIED
    8
    R-PDSO-G8
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    20V
    23A
    0.0035Ohm
    20V
    DRAIN
    60A
    -
    -
  • FDS6670AS
    ACTIVE (Last Updated: 1 day ago)
    18 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    130mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®, SyncFET™
    e4
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    9MOhm
    Nickel/Palladium/Gold (Ni/Pd/Au)
    -
    30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    13.5A
    1
    2.5W Ta
    Single
    ENHANCEMENT MODE
    2.5W
    10 ns
    N-Channel
    SWITCHING
    9m Ω @ 13.5A, 10V
    3V @ 1mA
    1540pF @ 15V
    13.5A Ta
    38nC @ 10V
    5ns
    4.5V 10V
    ±20V
    18 ns
    27 ns
    13.5A
    -
    20V
    30V
    1.5mm
    5mm
    4mm
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Tin
    2005
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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