Fairchild/ON Semiconductor FDS6574A
- Part Number:
- FDS6574A
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2478212-FDS6574A
- Description:
- MOSFET N-CH 20V 16A 8-SOIC
- Datasheet:
- FDS6574A
Fairchild/ON Semiconductor FDS6574A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6574A.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time18 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight130mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance6MOhm
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC20V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating16A
- Number of Elements1
- Power Dissipation-Max2.5W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5W
- Turn On Delay Time19.5 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs6m Ω @ 16A, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds7657pF @ 10V
- Current - Continuous Drain (Id) @ 25°C16A Ta
- Gate Charge (Qg) (Max) @ Vgs105nC @ 4.5V
- Rise Time22ns
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)82 ns
- Turn-Off Delay Time173 ns
- Continuous Drain Current (ID)16A
- Threshold Voltage600mV
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage20V
- Height1.5mm
- Length5mm
- Width4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDS6574A Description
With FDS6574A N-Channel MOSFETs, DC/DC converters with conventional switching PWM controllers can be improved in terms of overall efficiency. The FDS6574A has been optimized to feature low gate charge, low RDS(ON), and fast switching speeds.
FDS6574A Features 16 A, 20 V
RoHS Compliant
Low gate charge
RDS(on) = 6 mΩ@ VGS = 4.5 V
RDS(on) = 7 mΩ @ VGS = 2.5 V
RDS(on) = 9 mΩ @ VGS = 1.8 V
High-performance trench technology for extremely low RDS(ON)
High power and current handling capability
FDS6574A Applications The product is intended for general usage and is suitable for a wide range of applications.
DC/DC Converters
Low-voltage
Battery-powered applications that demand little in-line power loss and quick switching
FDS6574A Features 16 A, 20 V
RoHS Compliant
Low gate charge
RDS(on) = 6 mΩ@ VGS = 4.5 V
RDS(on) = 7 mΩ @ VGS = 2.5 V
RDS(on) = 9 mΩ @ VGS = 1.8 V
High-performance trench technology for extremely low RDS(ON)
High power and current handling capability
FDS6574A Applications The product is intended for general usage and is suitable for a wide range of applications.
DC/DC Converters
Low-voltage
Battery-powered applications that demand little in-line power loss and quick switching
FDS6574A More Descriptions
N-Channel PowerTrench® MOSFET, 20V, 16A, 6mΩ
N-Channel 20 V 6 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
Trans MOSFET N-CH 20V 16A 8-Pin SOIC N T/R - Tape and Reel
MOSFET, N-CH, 20V, 16A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 16A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.004ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 600mV; Po
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
N-Channel 20 V 6 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
Trans MOSFET N-CH 20V 16A 8-Pin SOIC N T/R - Tape and Reel
MOSFET, N-CH, 20V, 16A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 16A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.004ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 600mV; Po
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
The three parts on the right have similar specifications to FDS6574A.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormCurrent RatingNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinCase ConnectionPulsed Drain Current-Max (IDM)Contact PlatingPublishedView Compare
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FDS6574AACTIVE (Last Updated: 1 day ago)18 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8130mgSILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®e4yesActive1 (Unlimited)8EAR996MOhmNickel/Palladium/Gold (Ni/Pd/Au)FET General Purpose Power20VMOSFET (Metal Oxide)DUALGULL WING16A12.5W TaSingleENHANCEMENT MODE2.5W19.5 nsN-ChannelSWITCHING6m Ω @ 16A, 4.5V1.5V @ 250μA7657pF @ 10V16A Ta105nC @ 4.5V22ns1.8V 4.5V±8V82 ns173 ns16A600mV8V20V1.5mm5mm4mmNo SVHCNoROHS3 CompliantLead Free----------------
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---Surface Mount8-SOIC (0.154, 3.90mm Width)--SILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®e3yesObsolete1 (Unlimited)8--MATTE TIN--MOSFET (Metal Oxide)DUALGULL WING-12.5W Ta-ENHANCEMENT MODE--N-ChannelSWITCHING6m Ω @ 16A, 10V3V @ 1mA3.29pF @ 15V16A Ta78nC @ 10V-4.5V 10V±20V-----------ROHS3 Compliant-YES260NOT SPECIFIED8R-PDSO-G8COMMERCIALSINGLE WITH BUILT-IN DIODE30V16A0.006Ohm30V----
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---Surface Mount8-SOIC (0.154, 3.90mm Width)--SILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e4yesObsolete1 (Unlimited)8--NICKEL PALLADIUM GOLD--MOSFET (Metal Oxide)DUALGULL WING-13W Ta-ENHANCEMENT MODE--N-ChannelSWITCHING3.5m Ω @ 23A, 4.5V1.5V @ 250μA7.191pF @ 10V23A Ta98nC @ 4.5V-1.8V 4.5V±8V-----------ROHS3 Compliant-YES260NOT SPECIFIED8R-PDSO-G8COMMERCIALSINGLE WITH BUILT-IN DIODE20V23A0.0035Ohm20VDRAIN60A--
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ACTIVE (Last Updated: 1 day ago)18 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8130mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®, SyncFET™e4yesActive1 (Unlimited)8EAR999MOhmNickel/Palladium/Gold (Ni/Pd/Au)-30VMOSFET (Metal Oxide)DUALGULL WING13.5A12.5W TaSingleENHANCEMENT MODE2.5W10 nsN-ChannelSWITCHING9m Ω @ 13.5A, 10V3V @ 1mA1540pF @ 15V13.5A Ta38nC @ 10V5ns4.5V 10V±20V18 ns27 ns13.5A-20V30V1.5mm5mm4mm-NoROHS3 CompliantLead Free-------------Tin2005
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