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FDMS86101

Fairchild/ON Semiconductor FDMS86101

Part Number:
FDMS86101
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2478238-FDMS86101
Description:
MOSFET N-CH 100V 12.4A POWER56
ECAD Model:
Datasheet:
FDMS86101

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Specifications
Fairchild/ON Semiconductor FDMS86101 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS86101.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    10 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Weight
    68.1mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Resistance
    8MOhm
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • JESD-30 Code
    R-PDSO-N5
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2.5W Ta 104W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    15 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    8m Ω @ 13A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3000pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    12.4A Ta 60A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    55nC @ 10V
  • Rise Time
    11ns
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    7 ns
  • Turn-Off Delay Time
    27 ns
  • Continuous Drain Current (ID)
    60A
  • Threshold Voltage
    2.9V
  • JEDEC-95 Code
    MO-240AA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    100V
  • Pulsed Drain Current-Max (IDM)
    200A
  • Max Junction Temperature (Tj)
    150°C
  • Height
    1.1mm
  • Length
    5.1mm
  • Width
    6.25mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
Description
The FDMS86101 is a POWERTRENCH? MOSFET, N-Channel. This N-Channel MOSFET is made with ON Semiconductor's innovative POWERTRENCH? technology, which has been specifically designed to reduce on-state resistance while maintaining excellent switching performance.

Features
? VGS = 10 V, ID = 13 A, max rDS(on) = 8 m ? At VGS = 6 V, ID = 9.5 A, max rDS(on) = 13.5 m ? Combination of advanced package and silicon for low rDS(on) and high efficiency ? MSL1 package design is tough. ? Completely UIL-tested ? Rg was tested 100 percent ? These devices are RoHS compliant and free of lead.

Applications
? DC?DC Conversion ? Switching and amplifying electronic signals in the electronic devices ? Inverter ? Use in digital circuit ? As a high-frequency amplifier
FDMS86101 More Descriptions
N-Channel PowerTrench® MOSFET 100V, 60A, 8mΩ
FDMS86101 Series 100 V 60 A 8 mOhm N-Channel PowerTrench® MOSFET - POWER-56
Power Field-Effect Transistor, 12.4A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
MOSFET,N CH,100V,12.4A,POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0084ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.9V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:Power 56; No. of Pins:8; SVHC:No SVHC (20-Jun-2011)
Product Comparison
The three parts on the right have similar specifications to FDMS86101.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Technology
    Terminal Position
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Max Junction Temperature (Tj)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Drain to Source Voltage (Vdss)
    Terminal Form
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Avalanche Energy Rating (Eas)
    View Compare
  • FDMS86101
    FDMS86101
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    10 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    68.1mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2009
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    8MOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    R-PDSO-N5
    1
    1
    2.5W Ta 104W Tc
    Single
    ENHANCEMENT MODE
    2.5W
    DRAIN
    15 ns
    N-Channel
    SWITCHING
    8m Ω @ 13A, 10V
    4V @ 250μA
    3000pF @ 50V
    12.4A Ta 60A Tc
    55nC @ 10V
    11ns
    6V 10V
    ±20V
    7 ns
    27 ns
    60A
    2.9V
    MO-240AA
    20V
    100V
    200A
    150°C
    1.1mm
    5.1mm
    6.25mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMS86550ET60
    FDMS86550ET60
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    12 Weeks
    -
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    56.5mg
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    1
    3.3W Ta 187W Tc
    Single
    -
    -
    -
    43 ns
    N-Channel
    -
    1.65m Ω @ 32A, 10V
    4.5V @ 250μA
    8235pF @ 30V
    32A Ta 245A Tc
    154nC @ 10V
    27ns
    8V 10V
    ±20V
    11 ns
    42 ns
    245A
    -
    -
    20V
    60V
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    Tin (Sn)
    260
    not_compliant
    NOT SPECIFIED
    -
    -
    -
    -
    -
    FDMS86101 vs FDMS86550ET60
  • FDMS8050ET30
    FDMS8050ET30
    Fairchild/ON Semiconductor
    ACTIVE, NOT REC (Last Updated: 2 days ago)
    6 Weeks
    -
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    56.5mg
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2017
    e3
    yes
    Not For New Designs
    1 (Unlimited)
    -
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    3.3W Ta 180W Tc
    Single
    -
    -
    -
    -
    N-Channel
    -
    0.65m Ω @ 55A, 10V
    3V @ 750μA
    22610pF @ 15V
    55A Ta 423A Tc
    285nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    423A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    Tin (Sn)
    260
    not_compliant
    NOT SPECIFIED
    30V
    -
    -
    -
    -
    FDMS86101 vs FDMS8050ET30
  • FDMS0312AS
    FDMS0312AS
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    26 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    74mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®, SyncFET™
    -
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    R-PDSO-F5
    1
    -
    2.5W Ta 36W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    10 ns
    N-Channel
    SWITCHING
    5m Ω @ 18A, 10V
    3V @ 1mA
    1815pF @ 15V
    18A Ta 22A Tc
    31nC @ 10V
    2.3ns
    4.5V 10V
    ±20V
    6 ns
    25 ns
    18A
    -
    MO-240AA
    20V
    30V
    100A
    -
    1mm
    6mm
    5mm
    -
    -
    ROHS3 Compliant
    -
    -
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    -
    FLAT
    22A
    0.005Ohm
    33 mJ
    FDMS86101 vs FDMS0312AS
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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