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FDMS7682

Fairchild/ON Semiconductor FDMS7682

Part Number:
FDMS7682
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2481900-FDMS7682
Description:
MOSFET N-CH 30V 22A POWER56
ECAD Model:
Datasheet:
FDMS7682

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Specifications
Fairchild/ON Semiconductor FDMS7682 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS7682.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    26 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Weight
    74mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • JESD-30 Code
    R-PDSO-F5
  • Number of Elements
    1
  • Power Dissipation-Max
    2.5W Ta 33W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    33W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    9.4 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    6.3m Ω @ 14A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1885pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    16A Ta 22A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    30nC @ 10V
  • Rise Time
    2.7ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    2.2 ns
  • Turn-Off Delay Time
    22 ns
  • Continuous Drain Current (ID)
    22A
  • JEDEC-95 Code
    MO-240AA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    59A
  • Drain-source On Resistance-Max
    0.0063Ohm
  • Drain to Source Breakdown Voltage
    30V
  • Avalanche Energy Rating (Eas)
    29 mJ
  • Nominal Vgs
    1.9 V
  • Height
    1.05mm
  • Length
    5mm
  • Width
    6mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDMS7682 Description
With a voltage of 30V, the FDMS7682 is an N-channel Power MOSFET from ON Semiconductor. The FDMS7682 has a working temperature of -55°C to 150°C TJ and maximum power dissipation of 33W. This N-Channel MOSFET was created with the goal of increasing overall efficiency and reducing switch node ringing in DC/DC converters with synchronous or traditional switching PWM controllers. Low gate charge, low RDS(on), quick switching speed, and body diode reverse recovery performance have all been tuned.

FDMS7682 Features
Max rDS(on) = 6.3 mΩ at VGS = 10 V, ID = 14 A
Max rDS(on) = 10.4 mΩat VGS = 4.5 V, ID = 11 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
Next-generation enhanced body diode technology, engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant

FDMS7682 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
FDMS7682 More Descriptions
N-Channel PowerTrench® MOSFET 30V, 6.3mΩ
Power Field-Effect Transistor, 16A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
MOSFET, N CH, 30V, 22A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0052ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:33W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Product Comparison
The three parts on the right have similar specifications to FDMS7682.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Drain to Source Voltage (Vdss)
    Number of Channels
    View Compare
  • FDMS7682
    FDMS7682
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    26 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    74mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2006
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    R-PDSO-F5
    1
    2.5W Ta 33W Tc
    Single
    ENHANCEMENT MODE
    33W
    DRAIN
    9.4 ns
    N-Channel
    SWITCHING
    6.3m Ω @ 14A, 10V
    3V @ 250μA
    1885pF @ 15V
    16A Ta 22A Tc
    30nC @ 10V
    2.7ns
    4.5V 10V
    ±20V
    2.2 ns
    22 ns
    22A
    MO-240AA
    20V
    59A
    0.0063Ohm
    30V
    29 mJ
    1.9 V
    1.05mm
    5mm
    6mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • FDMS8350LET40
    FDMS8350LET40
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 week ago)
    12 Weeks
    -
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    56.5mg
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    3.33W Ta 125W Tc
    Single
    -
    -
    -
    -
    N-Channel
    -
    0.85m Ω @ 47A, 10V
    3V @ 250μA
    16590pF @ 20V
    49A Ta 300A Tc
    219nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    300A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    Tin (Sn)
    260
    not_compliant
    NOT SPECIFIED
    40V
    -
    FDMS7682 vs FDMS8350LET40
  • FDMS86550ET60
    FDMS86550ET60
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    12 Weeks
    -
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    56.5mg
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    3.3W Ta 187W Tc
    Single
    -
    -
    -
    43 ns
    N-Channel
    -
    1.65m Ω @ 32A, 10V
    4.5V @ 250μA
    8235pF @ 30V
    32A Ta 245A Tc
    154nC @ 10V
    27ns
    8V 10V
    ±20V
    11 ns
    42 ns
    245A
    -
    20V
    -
    -
    60V
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    Tin (Sn)
    260
    not_compliant
    NOT SPECIFIED
    -
    1
    FDMS7682 vs FDMS86550ET60
  • FDMS8050ET30
    FDMS8050ET30
    Fairchild/ON Semiconductor
    ACTIVE, NOT REC (Last Updated: 2 days ago)
    6 Weeks
    -
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    56.5mg
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2017
    e3
    yes
    Not For New Designs
    1 (Unlimited)
    -
    EAR99
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    3.3W Ta 180W Tc
    Single
    -
    -
    -
    -
    N-Channel
    -
    0.65m Ω @ 55A, 10V
    3V @ 750μA
    22610pF @ 15V
    55A Ta 423A Tc
    285nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    423A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    Tin (Sn)
    260
    not_compliant
    NOT SPECIFIED
    30V
    -
    FDMS7682 vs FDMS8050ET30
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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