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FDMC86240

Fairchild/ON Semiconductor FDMC86240

Part Number:
FDMC86240
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2478225-FDMC86240
Description:
MOSFET N-CH 150V 16A POWER33
ECAD Model:
Datasheet:
FDMC86240

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Specifications
Fairchild/ON Semiconductor FDMC86240 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC86240.
  • Lifecycle Status
    ACTIVE (Last Updated: 17 hours ago)
  • Factory Lead Time
    10 Weeks
  • Contact Plating
    Gold, Silver
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerWDFN
  • Number of Pins
    8
  • Weight
    165.33333mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2007
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Resistance
    70MOhm
  • Terminal Finish
    Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • JESD-30 Code
    S-PDSO-N5
  • Number of Elements
    1
  • Power Dissipation-Max
    2.3W Ta 40W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    40W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    8.2 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    51m Ω @ 4.6A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    905pF @ 75V
  • Current - Continuous Drain (Id) @ 25°C
    4.6A Ta 16A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    15nC @ 10V
  • Rise Time
    1.7ns
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    3.1 ns
  • Turn-Off Delay Time
    14 ns
  • Continuous Drain Current (ID)
    16A
  • Threshold Voltage
    2.9V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    4.6A
  • Drain to Source Breakdown Voltage
    150V
  • Pulsed Drain Current-Max (IDM)
    20A
  • Avalanche Energy Rating (Eas)
    34 mJ
  • Height
    750μm
  • Length
    3.3mm
  • Width
    3.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDMC86240 MOSFET Description
The FDMC86240 MOSFET utilizes Onsemi's PowerTrench technology and extends a low-level on-resistance but manages to remain high switching performance. It is enclosed in the low-profile package and can dissipate 40 W at its maximum power dissipation.

FDMC86240 MOSFET Features
Shielded Gate MOSFET Technology Max rDS(on) = 51 mΩ at VGS = 10 V, ID = 4.6 A Max rDS(on) = 70 mΩ at VGS = 6 V, ID = 3.9 A Low Profile - 1 mm max in Power 33 100% UIL Tested RoHS Compliant

FDMC86240 MOSFET Applications
Power Converter Inverter Switching Applications High Voltage Applications PFC Topology
FDMC86240 More Descriptions
N-Channel Power Trench® MOSFET 150V, 16A, 51mΩ
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
MOSFET, N CH, 150V, 16A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0447ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.9V; Power Dissipation Pd:40W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Product Comparison
The three parts on the right have similar specifications to FDMC86240.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    JEDEC-95 Code
    Nominal Vgs
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Number of Channels
    Max Junction Temperature (Tj)
    View Compare
  • FDMC86240
    FDMC86240
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 17 hours ago)
    10 Weeks
    Gold, Silver
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    165.33333mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2007
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    70MOhm
    Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    2.3W Ta 40W Tc
    Single
    ENHANCEMENT MODE
    40W
    DRAIN
    8.2 ns
    N-Channel
    SWITCHING
    51m Ω @ 4.6A, 10V
    4V @ 250μA
    905pF @ 75V
    4.6A Ta 16A Tc
    15nC @ 10V
    1.7ns
    6V 10V
    ±20V
    3.1 ns
    14 ns
    16A
    2.9V
    20V
    4.6A
    150V
    20A
    34 mJ
    750μm
    3.3mm
    3.3mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMC86102
    FDMC86102
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 week ago)
    40 Weeks
    -
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    24MOhm
    Nickel/Palladium (Ni/Pd)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    2.3W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    8 ns
    N-Channel
    SWITCHING
    24m Ω @ 7A, 10V
    4V @ 250μA
    965pF @ 50V
    7A Ta 20A Tc
    18nC @ 10V
    4ns
    6V 10V
    ±20V
    4 ns
    14 ns
    20A
    3.1V
    20V
    7A
    100V
    30A
    72 mJ
    950μm
    3.4mm
    3.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    MO-240BA
    3.1 V
    -
    -
    -
    -
    -
    -
    FDMC86240 vs FDMC86102
  • FDMC8462
    FDMC8462
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 11 hours ago)
    43 Weeks
    Gold
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    5.8MOhm
    Nickel/Palladium (Ni/Pd)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    2W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    2W
    DRAIN
    12 ns
    N-Channel
    SWITCHING
    5.8m Ω @ 13.5A, 10V
    3V @ 250μA
    2660pF @ 20V
    14A Ta 20A Tc
    43nC @ 10V
    4ns
    4.5V 10V
    ±20V
    3 ns
    27 ns
    14A
    2V
    20V
    64A
    40V
    50A
    -
    1.05mm
    3.3mm
    3.3mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    FDMC86240 vs FDMC8462
  • FDMC8651
    FDMC8651
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    34 Weeks
    -
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    6.1MOhm
    Nickel/Palladium (Ni/Pd)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    2.3W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    18 ns
    N-Channel
    SWITCHING
    6.1m Ω @ 15A, 4.5V
    1.5V @ 250μA
    3365pF @ 15V
    15A Ta 20A Tc
    27.2nC @ 4.5V
    9ns
    2.5V 4.5V
    ±12V
    6 ns
    35 ns
    15A
    800mV
    12V
    64A
    30V
    60A
    -
    1.05mm
    3.3mm
    3.3mm
    No SVHC
    -
    ROHS3 Compliant
    Lead Free
    -
    1.1 V
    NO LEAD
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    1
    150°C
    FDMC86240 vs FDMC8651
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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