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FDMA1430JP

Fairchild/ON Semiconductor FDMA1430JP

Part Number:
FDMA1430JP
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2496802-FDMA1430JP
Description:
FET/BJT NPN/P CH 30V 2.9A MICROF
ECAD Model:
Datasheet:
FDMA1430JP

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Specifications
Fairchild/ON Semiconductor FDMA1430JP technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMA1430JP.
  • Lifecycle Status
    CONSULT SALES OFFICE (Last Updated: 1 week ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-VDFN Exposed Pad
  • Number of Pins
    6
  • Weight
    40mg
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2006
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Applications
    Load Switch
  • Voltage - Rated
    30V
  • HTS Code
    8541.29.00.95
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    1.5W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Current Rating
    2.9A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    FDMA1430
  • Number of Elements
    2
  • Element Configuration
    Single
  • Power Dissipation
    1.5W
  • Turn On Delay Time
    4.8 ns
  • Rise Time
    10ns
  • Fall Time (Typ)
    33 ns
  • Transistor Type
    NPN, P-Channel
  • Turn-Off Delay Time
    107 ns
  • Continuous Drain Current (ID)
    -2.9A
  • Gate to Source Voltage (Vgs)
    8V
  • Drain to Source Breakdown Voltage
    -30V
  • Input Capacitance
    438pF
  • Collector Base Voltage (VCBO)
    50V
  • Emitter Base Voltage (VEBO)
    10V
  • hFE Min
    68
  • Collector Current-Max (IC)
    0.1A
  • DC Current Gain-Min (hFE)
    68
  • Drain to Source Resistance
    90mOhm
  • VCEsat-Max
    0.3 V
  • Height
    725μm
  • Length
    2mm
  • Width
    2mm
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
FDMA1430JP Description
This particular gadget is intended to serve as a single-package solution for loadswitching in mobile phone applications and other ultra-portable ones. It has a 50 V NPN BJT and a 30 V P-ch Trench MOSFET in a compact MicroFET 2x2 package that is ideal for linear mode applications and has remarkable thermal performance for its size.

FDMA1430JP Features
Low profile (maximum 0.8 mm) in the new MicroFET 2x2 package
RoHS Compliant; HBM ESD protection level > 2 kV usual (Note 3).

FDMA1430JP Applications
Switching applications
FDMA1430JP More Descriptions
Integrated P-Channel PowerTrench® MOSFET and BJT -30V , -2.9A, 90mΩ
TAPE REEL / Intergrated P-Channel Power Trench @ MOSFET and BJT
Integrated P-Channel MOSFET and BJT 6-Pin MLP EP T/R
Small Signal Field-Effect Transistor, 2-Element
MOSF/BJT P CH 30V 2.9A MICROFET
FET/BJT NPN/P CH 30V 2.9A MICROF
This device is designed specifically as a single package solution for loadswitching in cellular handset and other ultra-portable applications. It features a 50 V NPN BJT and a 30 V P-ch Trench MOSFET in the space saving MicroFET 2x2 package that offers exceptional thermal performance for it's physical size and is well suited to linear mode applications.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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