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EPC2007C

EPC EPC2007C

Part Number:
EPC2007C
Manufacturer:
EPC
Ventron No:
2478232-EPC2007C
Description:
TRANS GAN 100V 6A BUMPED DIE
ECAD Model:
Datasheet:
EPC2007C

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Specifications
EPC EPC2007C technical specifications, attributes, parameters and parts with similar specifications to EPC EPC2007C.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    Die
  • Supplier Device Package
    Die Outline (5-Solder Bar)
  • Operating Temperature
    -40°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    eGaN®
  • Published
    2015
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -40°C
  • Technology
    GaNFET (Gallium Nitride)
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    30mOhm @ 6A, 5V
  • Vgs(th) (Max) @ Id
    2.5V @ 1.2mA
  • Input Capacitance (Ciss) (Max) @ Vds
    220pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    6A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    2.2nC @ 5V
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    5V
  • Vgs (Max)
    6V, -4V
  • Continuous Drain Current (ID)
    6A
  • Input Capacitance
    220pF
  • Rds On Max
    30 mΩ
  • RoHS Status
    ROHS3 Compliant
Description
EPC2007C Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 220pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (5V).

EPC2007C Features
a continuous drain current (ID) of 6A
a 100V drain to source voltage (Vdss)


EPC2007C Applications
There are a lot of EPC
EPC2007C applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
EPC2007C More Descriptions
Trans MOSFET N-CH GaN 100V 6A Automotive 5-Pin Die T/R
Power Field-Effect Transistor, 6A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET
CoC and 2-years warranty / RFQ for pricing
GANFET N-CH 100V 6A DIE OUTLINE
GANFET TRANS 100V 6A BUMPED DIE
Product Comparison
The three parts on the right have similar specifications to EPC2007C.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    Input Capacitance
    Rds On Max
    RoHS Status
    View Compare
  • EPC2007C
    EPC2007C
    EPC
    12 Weeks
    Surface Mount
    Surface Mount
    Die
    Die Outline (5-Solder Bar)
    -40°C~150°C TJ
    Tape & Reel (TR)
    eGaN®
    2015
    Active
    1 (Unlimited)
    150°C
    -40°C
    GaNFET (Gallium Nitride)
    N-Channel
    30mOhm @ 6A, 5V
    2.5V @ 1.2mA
    220pF @ 50V
    6A Ta
    2.2nC @ 5V
    100V
    5V
    6V, -4V
    6A
    220pF
    30 mΩ
    ROHS3 Compliant
    -
  • EPC2007
    EPC2007
    EPC
    -
    Surface Mount
    Surface Mount
    Die
    Die Outline (5-Solder Bar)
    -40°C~125°C TJ
    Cut Tape (CT)
    eGaN®
    2013
    Obsolete
    1 (Unlimited)
    -
    -
    GaNFET (Gallium Nitride)
    N-Channel
    30mOhm @ 6A, 5V
    2.5V @ 1.2mA
    205pF @ 50V
    6A Ta
    2.8nC @ 5V
    100V
    5V
    6V, -5V
    6A
    205pF
    30 mΩ
    RoHS Compliant
    EPC2007C vs EPC2007
  • EPC2021
    EPC2021
    EPC
    12 Weeks
    Surface Mount
    Surface Mount
    Die
    Die
    -40°C~150°C TJ
    Tape & Reel (TR)
    eGaN®
    2012
    Active
    1 (Unlimited)
    150°C
    -40°C
    GaNFET (Gallium Nitride)
    N-Channel
    2.5mOhm @ 29A, 5V
    2.5V @ 14mA
    1650pF @ 40V
    90A Ta
    15nC @ 5V
    80V
    5V
    6V, -4V
    90A
    1.65nF
    2.5 mΩ
    ROHS3 Compliant
    EPC2007C vs EPC2021
  • EPC2001C
    EPC2001C
    EPC
    12 Weeks
    Surface Mount
    Surface Mount
    Die
    Die Outline (11-Solder Bar)
    -40°C~150°C TJ
    Tape & Reel (TR)
    eGaN®
    2014
    Active
    1 (Unlimited)
    150°C
    -40°C
    GaNFET (Gallium Nitride)
    N-Channel
    7mOhm @ 25A, 5V
    2.5V @ 5mA
    900pF @ 50V
    36A Ta
    9nC @ 5V
    100V
    5V
    6V, -4V
    36A
    900pF
    7 mΩ
    ROHS3 Compliant
    EPC2007C vs EPC2001C
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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