Rohm Semiconductor EMF9T2R
- Part Number:
- EMF9T2R
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2496827-EMF9T2R
- Description:
- TRANS DUAL BIP MOS EMT6
- Datasheet:
- EMF9
Rohm Semiconductor EMF9T2R technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor EMF9T2R.
- Factory Lead Time10 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee2
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTIN COPPER
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- ApplicationsGeneral Purpose
- Voltage - Rated12V NPN 30V N Channel
- SubcategoryOther Transistors
- Current Rating (Amps)500mA NPN 100mA N Channel
- Max Power Dissipation150mW
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)10
- Pin Count6
- Max Output Current100mA
- Number of Elements1
- PolarityNPN, PNP
- Number of Channels2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Max Output Voltage12V
- Transistor ApplicationSWITCHING
- Transistor TypeNPN, N-Channel
- Collector Emitter Breakdown Voltage12V
- Drain Current-Max (Abs) (ID)0.1A
- Drain-source On Resistance-Max8Ohm
- Transition Frequency320MHz
- DS Breakdown Voltage-Min30V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Collector Current-Max (IC)0.5A
- DC Current Gain-Min (hFE)270
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
EMF9T2R Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Special Purpose. The images we provide are for reference only, for detailed product information please see specification sheet EMF9T2R or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of EMF9T2R. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Special Purpose. The images we provide are for reference only, for detailed product information please see specification sheet EMF9T2R or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of EMF9T2R. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
EMF9T2R More Descriptions
Dual Transistors 6-Pin EMT T/R
TRANS. NPN NCH MOSFET; Transistor polarity:N-Channel PNP; Transistors, No. of:2; Termination Type:SMD; Case style:EMT; Channels, No. of:2; Current, output max:0.1A; Pins, No. of:6; Voltage, output max:12V RoHS Compliant: Yes
TRANS. NPN NCH MOSFET; Transistor Polarity: PNP N MOSFET; Collector Emitter Voltage V(br)ceo: 12V; Power Dissipation Pd: 150mW; DC Collector Current: 500mA; DC Current Gain hFE: 270hFE; Transistor Case Style: EMT; No. of P
TRANS. NPN NCH MOSFET; Transistor polarity:N-Channel PNP; Transistors, No. of:2; Termination Type:SMD; Case style:EMT; Channels, No. of:2; Current, output max:0.1A; Pins, No. of:6; Voltage, output max:12V RoHS Compliant: Yes
TRANS. NPN NCH MOSFET; Transistor Polarity: PNP N MOSFET; Collector Emitter Voltage V(br)ceo: 12V; Power Dissipation Pd: 150mW; DC Collector Current: 500mA; DC Current Gain hFE: 270hFE; Transistor Case Style: EMT; No. of P
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