Micron Technology Inc. EDF8164A3PK-JD-F-D
- Part Number:
- EDF8164A3PK-JD-F-D
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3235312-EDF8164A3PK-JD-F-D
- Description:
- IC SDRAM 8GBIT 933MHZ FBGA
- Datasheet:
- EDF8164A3PK, EDFA164A2PK
Micron Technology Inc. EDF8164A3PK-JD-F-D technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. EDF8164A3PK-JD-F-D.
- Factory Lead Time9 Weeks
- Mounting TypeSurface Mount
- Package / Case216-WFBGA
- Surface MountYES
- Operating Temperature-30°C~85°C TC
- PackagingTray
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations216
- ECCN CodeEAR99
- Additional FeatureAUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY
- TechnologySDRAM - Mobile LPDDR3
- Voltage - Supply1.14V~1.95V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage1.2V
- Terminal Pitch0.4mm
- JESD-30 CodeS-PBGA-B216
- Supply Voltage-Max (Vsup)1.3V
- Supply Voltage-Min (Vsup)1.14V
- Memory Size8Gb 128M x 64
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency933MHz
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization128MX64
- Memory Width64
- Memory Density8589934592 bit
- Access ModeSINGLE BANK PAGE BURST
- Height Seated (Max)0.7mm
- Length12mm
- Width12mm
- RoHS StatusROHS3 Compliant
EDF8164A3PK-JD-F-D Overview
The package or case for this particular technology is a 216-WFBGA, which refers to the type of packaging used to house the integrated circuit. This package contains 216 terminations, which are the points where the package is connected to the circuit board. The technology used in this package is SDRAM - Mobile LPDDR3, a type of memory commonly used in mobile devices. The supply voltage-min (Vsup) for this technology is 1.14V, which is the minimum voltage required for the device to operate. This package has 1 port, allowing for data to be transferred in and out. It operates in synchronous mode, meaning that data is transferred in a coordinated and synchronized manner. The organization of this technology is 128MX64, indicating the number of rows and columns in the memory array. The memory density is an impressive 8589934592 bits, allowing for a large amount of data to be stored. The access mode is single bank page burst, which allows for quick and efficient access to the memory. Finally, the height seated (max) of this package is 0.7mm, making it a compact and space-saving option for electronic devices.
EDF8164A3PK-JD-F-D Features
Package / Case: 216-WFBGA
Additional Feature:AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY
EDF8164A3PK-JD-F-D Applications
There are a lot of Micron Technology Inc.
EDF8164A3PK-JD-F-D Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
The package or case for this particular technology is a 216-WFBGA, which refers to the type of packaging used to house the integrated circuit. This package contains 216 terminations, which are the points where the package is connected to the circuit board. The technology used in this package is SDRAM - Mobile LPDDR3, a type of memory commonly used in mobile devices. The supply voltage-min (Vsup) for this technology is 1.14V, which is the minimum voltage required for the device to operate. This package has 1 port, allowing for data to be transferred in and out. It operates in synchronous mode, meaning that data is transferred in a coordinated and synchronized manner. The organization of this technology is 128MX64, indicating the number of rows and columns in the memory array. The memory density is an impressive 8589934592 bits, allowing for a large amount of data to be stored. The access mode is single bank page burst, which allows for quick and efficient access to the memory. Finally, the height seated (max) of this package is 0.7mm, making it a compact and space-saving option for electronic devices.
EDF8164A3PK-JD-F-D Features
Package / Case: 216-WFBGA
Additional Feature:AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY
EDF8164A3PK-JD-F-D Applications
There are a lot of Micron Technology Inc.
EDF8164A3PK-JD-F-D Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
EDF8164A3PK-JD-F-D More Descriptions
IC DRAM 8G PARALLEL 933MHZ FBGA
IC DRAM 8GBIT PARALLEL 216FBGA
IC FLASH 128G PARALLEL 132VBGA
IC DRAM 8GBIT PARALLEL 216FBGA
IC FLASH 128G PARALLEL 132VBGA
The three parts on the right have similar specifications to EDF8164A3PK-JD-F-D.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencyMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityAccess ModeHeight Seated (Max)LengthWidthRoHS StatusView Compare
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EDF8164A3PK-JD-F-D9 WeeksSurface Mount216-WFBGAYES-30°C~85°C TCTrayObsolete3 (168 Hours)216EAR99AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLYSDRAM - Mobile LPDDR31.14V~1.95VBOTTOM11.2V0.4mmS-PBGA-B2161.3V1.14V8Gb 128M x 641VolatileSYNCHRONOUS933MHzDRAMParallel128MX64648589934592 bitSINGLE BANK PAGE BURST0.7mm12mm12mmROHS3 Compliant-
-
-----30°C~85°C TCTape & Reel (TR)Obsolete1 (Unlimited)---SDRAM - Mobile LPDDR31.14V~1.95V-------8Gb 128M x 64-Volatile-800MHzDRAMParallel--------
-
-----30°C~85°C TCTape & Reel (TR)Obsolete3 (168 Hours)---SDRAM - Mobile LPDDR31.14V~1.95V-------8Gb 256M x 32-Volatile-800MHzDRAMParallel-------ROHS3 Compliant
-
--FBGA--30°C~85°C TCTrayObsolete3 (168 Hours)---SDRAM - Mobile LPDDR31.14V~1.95V-------8Gb 128M x 64-Volatile-800MHzDRAMParallel-------ROHS3 Compliant
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