Micron Technology Inc. EDF8164A3PK-GD-F-D
- Part Number:
- EDF8164A3PK-GD-F-D
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3255444-EDF8164A3PK-GD-F-D
- Description:
- IC SDRAM 8GBIT 800MHZ 256FBGA
- Datasheet:
- EDF8164A3PK, EDFA164A2PK
Micron Technology Inc. EDF8164A3PK-GD-F-D technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. EDF8164A3PK-GD-F-D.
- Mounting TypeSurface Mount
- Package / Case216-WFBGA
- Surface MountYES
- Operating Temperature-30°C~85°C TC
- PackagingTray
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations216
- ECCN CodeEAR99
- Additional FeatureAUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY
- TechnologySDRAM - Mobile LPDDR3
- Voltage - Supply1.14V~1.95V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage1.2V
- Terminal Pitch0.4mm
- Reach Compliance Codeunknown
- JESD-30 CodeS-PBGA-B216
- Supply Voltage-Max (Vsup)1.3V
- Supply Voltage-Min (Vsup)1.14V
- Memory Size8Gb 128M x 64
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency800MHz
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization128MX64
- Memory Width64
- Memory Density8589934592 bit
- Access ModeSINGLE BANK PAGE BURST
- Height Seated (Max)0.7mm
- Length12mm
- Width12mm
- RoHS StatusROHS3 Compliant
EDF8164A3PK-GD-F-D Overview
The AUTO/SELF REFRESH feature is an additional capability of the SDRAM - Mobile LPDDR3 technology, which further enhances its performance. This feature allows the memory to automatically refresh itself, reducing the need for manual intervention. However, in order to utilize this feature, the memory requires a 1.8V nominal supply, which is within the recommended voltage range of 1.14V~1.95V. Additionally, the supply voltage for this memory is 1.2V, making it energy efficient. With only one port, this volatile memory type offers a high memory density of 8589934592 bits. It also follows the ROHS3 compliance, ensuring its environmental friendliness. The memory interface is parallel, providing fast and efficient data transfer. Overall, the SDRAM - Mobile LPDDR3 with its AUTO/SELF REFRESH feature is a highly advanced and reliable memory solution for various electronic devices.
EDF8164A3PK-GD-F-D Features
Package / Case: 216-WFBGA
Additional Feature:AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY
EDF8164A3PK-GD-F-D Applications
There are a lot of Micron Technology Inc.
EDF8164A3PK-GD-F-D Memory applications.
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
The AUTO/SELF REFRESH feature is an additional capability of the SDRAM - Mobile LPDDR3 technology, which further enhances its performance. This feature allows the memory to automatically refresh itself, reducing the need for manual intervention. However, in order to utilize this feature, the memory requires a 1.8V nominal supply, which is within the recommended voltage range of 1.14V~1.95V. Additionally, the supply voltage for this memory is 1.2V, making it energy efficient. With only one port, this volatile memory type offers a high memory density of 8589934592 bits. It also follows the ROHS3 compliance, ensuring its environmental friendliness. The memory interface is parallel, providing fast and efficient data transfer. Overall, the SDRAM - Mobile LPDDR3 with its AUTO/SELF REFRESH feature is a highly advanced and reliable memory solution for various electronic devices.
EDF8164A3PK-GD-F-D Features
Package / Case: 216-WFBGA
Additional Feature:AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY
EDF8164A3PK-GD-F-D Applications
There are a lot of Micron Technology Inc.
EDF8164A3PK-GD-F-D Memory applications.
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
EDF8164A3PK-GD-F-D More Descriptions
DRAM Chip Mobile LPDDR3 SDRAM 8G-Bit 128Mx64 1.2V 256-Pin WFBGA Tray
2E0F LPDDR3 128MX64 PLASTIC WFBGA 1.2V WIRELESS TEMP
IC DRAM 8GBIT PARALLEL 216FBGA
2E0F LPDDR3 128MX64 PLASTIC WFBGA 1.2V WIRELESS TEMP
IC DRAM 8GBIT PARALLEL 216FBGA
The three parts on the right have similar specifications to EDF8164A3PK-GD-F-D.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchReach Compliance CodeJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencyMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityAccess ModeHeight Seated (Max)LengthWidthRoHS StatusView Compare
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EDF8164A3PK-GD-F-DSurface Mount216-WFBGAYES-30°C~85°C TCTrayObsolete3 (168 Hours)216EAR99AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLYSDRAM - Mobile LPDDR31.14V~1.95VBOTTOM11.2V0.4mmunknownS-PBGA-B2161.3V1.14V8Gb 128M x 641VolatileSYNCHRONOUS800MHzDRAMParallel128MX64648589934592 bitSINGLE BANK PAGE BURST0.7mm12mm12mmROHS3 Compliant-
-
----30°C~85°C TCTape & Reel (TR)Obsolete1 (Unlimited)---SDRAM - Mobile LPDDR31.14V~1.95V--------8Gb 128M x 64-Volatile-800MHzDRAMParallel--------
-
----30°C~85°C TCTape & Reel (TR)Obsolete1 (Unlimited)---SDRAM - Mobile LPDDR31.14V~1.95V--------8Gb 128M x 64-Volatile-800MHzDRAMParallel--------
-
----30°C~85°C TCTrayObsolete3 (168 Hours)---SDRAM - Mobile LPDDR31.14V~1.95V--------8Gb 256M x 32-Volatile-800MHzDRAMParallel-------ROHS3 Compliant
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