Micron Technology Inc. EDB8164B4PT-1D-F-D
- Part Number:
- EDB8164B4PT-1D-F-D
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3235100-EDB8164B4PT-1D-F-D
- Description:
- IC SDRAM 8GBIT 533MHZ 216FBGA
- ECAD Model:
-
- Datasheet:
- EDB8164B4PT-1D-F-D
Micron Technology Inc. EDB8164B4PT-1D-F-D technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. EDB8164B4PT-1D-F-D.
- Factory Lead Time10 Weeks
- Mounting TypeSurface Mount
- Package / Case216-WFBGA
- Surface MountYES
- Operating Temperature-30°C~85°C TC
- PackagingBulk
- Published2008
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations216
- Additional FeatureAUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY
- TechnologySDRAM - Mobile LPDDR2
- Voltage - Supply1.14V~1.95V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage1.2V
- Terminal Pitch0.4mm
- JESD-30 CodeS-PBGA-B216
- Supply Voltage-Max (Vsup)1.3V
- Supply Voltage-Min (Vsup)1.14V
- Memory Size8Gb 128M x 64
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency533MHz
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization128MX64
- Memory Width64
- Memory Density8589934592 bit
- Access ModeSINGLE BANK PAGE BURST
- Height Seated (Max)0.8mm
- Length12mm
- Width12mm
- RoHS StatusROHS3 Compliant
EDB8164B4PT-1D-F-D Overview
The Moisture Sensitivity Level (MSL) of this particular technology, SDRAM - Mobile LPDDR2, is classified as a level 3 with a duration of 168 hours. This means that it can withstand a certain level of moisture exposure for a period of 168 hours without being damaged. The number of terminations for this technology is 216, and the terminal position is at the bottom. It has a single function and operates at a supply voltage of 1.2V. The JESD-30 Code for this technology is S-PBGA-B216, indicating its package type. It is a DRAM memory format with a density of 8589934592 bits. Additionally, it is also compliant with RoHS3 standards, ensuring that it is environmentally friendly.
EDB8164B4PT-1D-F-D Features
Package / Case: 216-WFBGA
Additional Feature:AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY
EDB8164B4PT-1D-F-D Applications
There are a lot of Micron Technology Inc.
EDB8164B4PT-1D-F-D Memory applications.
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
The Moisture Sensitivity Level (MSL) of this particular technology, SDRAM - Mobile LPDDR2, is classified as a level 3 with a duration of 168 hours. This means that it can withstand a certain level of moisture exposure for a period of 168 hours without being damaged. The number of terminations for this technology is 216, and the terminal position is at the bottom. It has a single function and operates at a supply voltage of 1.2V. The JESD-30 Code for this technology is S-PBGA-B216, indicating its package type. It is a DRAM memory format with a density of 8589934592 bits. Additionally, it is also compliant with RoHS3 standards, ensuring that it is environmentally friendly.
EDB8164B4PT-1D-F-D Features
Package / Case: 216-WFBGA
Additional Feature:AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY
EDB8164B4PT-1D-F-D Applications
There are a lot of Micron Technology Inc.
EDB8164B4PT-1D-F-D Memory applications.
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
EDB8164B4PT-1D-F-D More Descriptions
DRAM Chip Mobile LPDDR2 SDRAM 8G-Bit 128Mx64 1.8V 216-Pin WFBGA Tray
2E0E LPDDR2 8G 128MX64 FBGA DDP
IC DRAM 8GBIT PARALLEL 216FBGA
Dram, 128M X 64Bit, -30 To 85Deg C; Dram Type:Lpddr2; Memory Configuration:128M X 64Bit; Clock Frequency Max:533Mhz; Ic Case/Package:Wfbga; No. Of Pins:216Pins; Supply Voltage Nom:1.2V; Ic Mounting:Surface Mount; Product Range:- Rohs Compliant: Yes |Micron EDB8164B4PT-1D-F-D
2E0E LPDDR2 8G 128MX64 FBGA DDP
IC DRAM 8GBIT PARALLEL 216FBGA
Dram, 128M X 64Bit, -30 To 85Deg C; Dram Type:Lpddr2; Memory Configuration:128M X 64Bit; Clock Frequency Max:533Mhz; Ic Case/Package:Wfbga; No. Of Pins:216Pins; Supply Voltage Nom:1.2V; Ic Mounting:Surface Mount; Product Range:- Rohs Compliant: Yes |Micron EDB8164B4PT-1D-F-D
The three parts on the right have similar specifications to EDB8164B4PT-1D-F-D.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencyMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityAccess ModeHeight Seated (Max)LengthWidthRoHS StatusView Compare
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EDB8164B4PT-1D-F-D10 WeeksSurface Mount216-WFBGAYES-30°C~85°C TCBulk2008Active3 (168 Hours)216AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLYSDRAM - Mobile LPDDR21.14V~1.95VBOTTOM11.2V0.4mmS-PBGA-B2161.3V1.14V8Gb 128M x 641VolatileSYNCHRONOUS533MHzDRAMParallel128MX64648589934592 bitSINGLE BANK PAGE BURST0.8mm12mm12mmROHS3 Compliant- -
-Surface Mount216-WFBGA--30°C~85°C TCTape & Reel (TR)-Active3 (168 Hours)--SDRAM - Mobile LPDDR21.14V~1.95V-------8Gb 128M x 64-Volatile-533MHzDRAMParallel-------ROHS3 Compliant
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-Surface Mount168-VFBGA--40°C~105°C TCTape & Reel (TR)-Active3 (168 Hours)--SDRAM - Mobile LPDDR21.14V~1.95V-------8Gb 256M x 32-Volatile-533MHzDRAMParallel-------ROHS3 Compliant
-
-Surface Mount168-VFBGA--40°C~105°C TCTape & Reel (TR)-Active---SDRAM - Mobile LPDDR21.14V~1.95V-------8Gb 256M x 32-Volatile-533MHzDRAMParallel--------
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