Diodes Incorporated DMT5015LFDF-13
- Part Number:
- DMT5015LFDF-13
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 4538926-DMT5015LFDF-13
- Description:
- MOSFET N-CH 50V 9.1A 6DFN
- Datasheet:
- DMT5015LFDF-13
Diodes Incorporated DMT5015LFDF-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMT5015LFDF-13.
- Factory Lead Time22 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-UDFN Exposed Pad
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2013
- JESD-609 Codee4
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Resistance15mOhm
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeS-PDSO-N6
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max820mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time2.8 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs15m Ω @ 8A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds902.7pF @ 25V
- Current - Continuous Drain (Id) @ 25°C9.1A Ta
- Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
- Rise Time5.1ns
- Drain to Source Voltage (Vdss)50V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±16V
- Fall Time (Typ)2.7 ns
- Turn-Off Delay Time10.6 ns
- Continuous Drain Current (ID)9.1A
- Gate to Source Voltage (Vgs)16V
- DS Breakdown Voltage-Min50V
- RoHS StatusROHS3 Compliant
DMT5015LFDF-13 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 902.7pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 10.6 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 2.8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 16VV.In order for DS breakdown voltage to remain above 50V, it should remain above the 50V level.The transistor must receive a 50V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
DMT5015LFDF-13 Features
a continuous drain current (ID) of 9.1A
the turn-off delay time is 10.6 ns
a 50V drain to source voltage (Vdss)
DMT5015LFDF-13 Applications
There are a lot of Diodes Incorporated
DMT5015LFDF-13 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 902.7pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 10.6 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 2.8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 16VV.In order for DS breakdown voltage to remain above 50V, it should remain above the 50V level.The transistor must receive a 50V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
DMT5015LFDF-13 Features
a continuous drain current (ID) of 9.1A
the turn-off delay time is 10.6 ns
a 50V drain to source voltage (Vdss)
DMT5015LFDF-13 Applications
There are a lot of Diodes Incorporated
DMT5015LFDF-13 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DMT5015LFDF-13 More Descriptions
MOSFET 50V N-Ch Enh FET 15mOhm 10Vgs 9.1A
60V N-CHANNEL ENHANCEMENT MODE MOSFET, 16±V VGSDiodes Inc SCT
MOSFET BVDSS: 41V~60V U-DFN2020-6 T&R 10K
Transistor Polarity:n Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:9.1A; On Resistance Rds(On):0.015Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Product Range:-Rohs Compliant: No
60V N-CHANNEL ENHANCEMENT MODE MOSFET, 16±V VGSDiodes Inc SCT
MOSFET BVDSS: 41V~60V U-DFN2020-6 T&R 10K
Transistor Polarity:n Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:9.1A; On Resistance Rds(On):0.015Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Product Range:-Rohs Compliant: No
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