Diodes Incorporated DMP4050SSS-13
- Part Number:
- DMP4050SSS-13
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2481329-DMP4050SSS-13
- Description:
- MOSFET P-CH 40V 4.4A 8SO
- Datasheet:
- DMP4050SSS-13
Diodes Incorporated DMP4050SSS-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP4050SSS-13.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight73.992255mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count8
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.56W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.8W
- Turn On Delay Time1.9 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs50m Ω @ 6A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds674pF @ 20V
- Current - Continuous Drain (Id) @ 25°C4.4A Ta
- Gate Charge (Qg) (Max) @ Vgs13.9nC @ 10V
- Rise Time3.1ns
- Drain to Source Voltage (Vdss)40V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)12.6 ns
- Turn-Off Delay Time31.5 ns
- Continuous Drain Current (ID)6A
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)4.4A
- Drain-source On Resistance-Max0.05Ohm
- Drain to Source Breakdown Voltage-40V
- Height1.5mm
- Length5mm
- Width4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMP4050SSS-13 Overview
A device's maximal input capacitance is 674pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 6A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 4.4A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 31.5 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 1.9 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
DMP4050SSS-13 Features
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 31.5 ns
a 40V drain to source voltage (Vdss)
DMP4050SSS-13 Applications
There are a lot of Diodes Incorporated
DMP4050SSS-13 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 674pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 6A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 4.4A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 31.5 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 1.9 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
DMP4050SSS-13 Features
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 31.5 ns
a 40V drain to source voltage (Vdss)
DMP4050SSS-13 Applications
There are a lot of Diodes Incorporated
DMP4050SSS-13 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
DMP4050SSS-13 More Descriptions
DMP4050SSS Series 40 V 4.4 A P-Channel Enhancement Mode Mosfet - SOIC-8
Mosfet, P-Ch, 40V, 4.4A, Soic Rohs Compliant: Yes |Diodes Inc. DMP4050SSS-13
Dual nano power high-voltage comparator with open-drain output 8-SOIC 0 to 70
MOSFET Operating temperature: -55...150 °C Housing type: SO-8 Polarity: P Variants: Enhancement mode Power dissipation: 1.56 W
Mosfet, P-Ch, 40V, 4.4A, Soic Rohs Compliant: Yes |Diodes Inc. DMP4050SSS-13
Dual nano power high-voltage comparator with open-drain output 8-SOIC 0 to 70
MOSFET Operating temperature: -55...150 °C Housing type: SO-8 Polarity: P Variants: Enhancement mode Power dissipation: 1.56 W
The three parts on the right have similar specifications to DMP4050SSS-13.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeManufacturer Package IdentifierCapacitanceThreshold VoltageMax Junction Temperature (Tj)ConfigurationView Compare
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DMP4050SSS-1317 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)873.992255mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3yesActive1 (Unlimited)8EAR99Matte Tin (Sn)HIGH RELIABILITYOther TransistorsMOSFET (Metal Oxide)DUALGULL WING260408111.56W TaSingleENHANCEMENT MODE2.8W1.9 nsP-ChannelSWITCHING50m Ω @ 6A, 10V3V @ 250μA674pF @ 20V4.4A Ta13.9nC @ 10V3.1ns40V4.5V 10V±20V12.6 ns31.5 ns6A20V4.4A0.05Ohm-40V1.5mm5mm4mmNo SVHCNoROHS3 CompliantLead Free------
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23 WeeksSurface MountSurface Mount8-PowerVDFN8---55°C~150°C TJTape & Reel (TR)2015e3-Active1 (Unlimited)-EAR99Matte Tin (Sn)--MOSFET (Metal Oxide)--NOT SPECIFIEDNOT SPECIFIED--11W Ta--1W5.3 nsP-Channel-13m Ω @ 10A, 10V3V @ 250μA3426pF @ 20V10.3A Ta68.6nC @ 10V20ns40V4.5V 10V±20V83 ns126 ns-10.3A20V---40V850μm----ROHS3 Compliant-POWERDI3333-82.569nF-3V150°C-
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16 WeeksSurface MountSurface Mount8-PowerVDFN872.007789mg--55°C~150°C TJTape & Reel (TR)2013e3-Active1 (Unlimited)-EAR99Matte Tin (Sn)-Other TransistorsMOSFET (Metal Oxide)------1810mW Ta--1.95W6.9 nsP-Channel-25m Ω @ 3A, 10V1.8V @ 250μA1643pF @ 20V4.65A Ta33.7nC @ 10V14.7ns40V4.5V 10V±20V30.9 ns53.7 ns7.2A20V---40V---No SVHCNoROHS3 Compliant-----Single
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16 WeeksSurface MountSurface Mount8-PowerVDFN872.007789mg--55°C~150°C TJTape & Reel (TR)2013e3-Active1 (Unlimited)-EAR99Matte Tin (Sn)-Other TransistorsMOSFET (Metal Oxide)-------810mW TaSingle--6.9 nsP-Channel-25m Ω @ 3A, 10V1.8V @ 250μA1643pF @ 20V4.65A Ta14nC @ 4.5V14.7ns40V4.5V 10V±20V30.9 ns53.7 ns7.2A20V---800μm3.35mm3.35mmNo SVHCNoROHS3 Compliant------
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