Diodes Incorporated DMP2035UTS-13
- Part Number:
- DMP2035UTS-13
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3813503-DMP2035UTS-13
- Description:
- MOSFET 2P-CH 20V 6.04A 8TSSOP
- Datasheet:
- DMP2035UTS-13
Diodes Incorporated DMP2035UTS-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP2035UTS-13.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-TSSOP (0.173, 4.40mm Width)
- Number of Pins8
- Weight157.991892mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2010
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- Max Power Dissipation890mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberDMP2035UTS
- Pin Count8
- Number of Elements2
- Operating ModeENHANCEMENT MODE
- Power Dissipation890mW
- Turn On Delay Time16.8 ns
- FET Type2 P-Channel (Dual) Common Drain
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs35m Ω @ 4A, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1610pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs15.4nC @ 4.5V
- Rise Time12.4ns
- Drain to Source Voltage (Vdss)20V
- Fall Time (Typ)42.4 ns
- Turn-Off Delay Time94.1 ns
- Continuous Drain Current (ID)6.04A
- Gate to Source Voltage (Vgs)8V
- Drain-source On Resistance-Max0.045Ohm
- Drain to Source Breakdown Voltage-20V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
DMP2035UTS-13 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMP2035UTS-13 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMP2035UTS-13. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMP2035UTS-13 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMP2035UTS-13. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
DMP2035UTS-13 More Descriptions
Transistor MOSFET Array Dual P-CH 20V 6.04A 8-Pin TSSOP T/R
Mosfet, Dual, P-Ch, 20V, 6.04A Rohs Compliant: Yes |Diodes Inc. DMP2035UTS-13
P-Channel (Dual) 20 V 6.04 A 35 mOhm SMT Enhancement Mode Mosfet SOT-363
Dual P-CHANNEL ENHANCEMENT MODE MOSFET, 20V VDS, 8±V VGSDiodes Inc SCT
Small Signal Field-Effect Transistor, 6.04A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Mosfet, Dual, P-Ch, 20V, 6.04A Rohs Compliant: Yes |Diodes Inc. DMP2035UTS-13
P-Channel (Dual) 20 V 6.04 A 35 mOhm SMT Enhancement Mode Mosfet SOT-363
Dual P-CHANNEL ENHANCEMENT MODE MOSFET, 20V VDS, 8±V VGSDiodes Inc SCT
Small Signal Field-Effect Transistor, 6.04A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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