DMP2035UTS-13

Diodes Incorporated DMP2035UTS-13

Part Number:
DMP2035UTS-13
Manufacturer:
Diodes Incorporated
Ventron No:
3813503-DMP2035UTS-13
Description:
MOSFET 2P-CH 20V 6.04A 8TSSOP
ECAD Model:
Datasheet:
DMP2035UTS-13

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Specifications
Diodes Incorporated DMP2035UTS-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP2035UTS-13.
  • Factory Lead Time
    15 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-TSSOP (0.173, 4.40mm Width)
  • Number of Pins
    8
  • Weight
    157.991892mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2010
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    890mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    DMP2035UTS
  • Pin Count
    8
  • Number of Elements
    2
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    890mW
  • Turn On Delay Time
    16.8 ns
  • FET Type
    2 P-Channel (Dual) Common Drain
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    35m Ω @ 4A, 4.5V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1610pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    15.4nC @ 4.5V
  • Rise Time
    12.4ns
  • Drain to Source Voltage (Vdss)
    20V
  • Fall Time (Typ)
    42.4 ns
  • Turn-Off Delay Time
    94.1 ns
  • Continuous Drain Current (ID)
    6.04A
  • Gate to Source Voltage (Vgs)
    8V
  • Drain-source On Resistance-Max
    0.045Ohm
  • Drain to Source Breakdown Voltage
    -20V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
DMP2035UTS-13 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMP2035UTS-13 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMP2035UTS-13. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
DMP2035UTS-13 More Descriptions
Transistor MOSFET Array Dual P-CH 20V 6.04A 8-Pin TSSOP T/R
Mosfet, Dual, P-Ch, 20V, 6.04A Rohs Compliant: Yes |Diodes Inc. DMP2035UTS-13
P-Channel (Dual) 20 V 6.04 A 35 mOhm SMT Enhancement Mode Mosfet SOT-363
Dual P-CHANNEL ENHANCEMENT MODE MOSFET, 20V VDS, 8±V VGSDiodes Inc SCT
Small Signal Field-Effect Transistor, 6.04A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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