Diodes Incorporated DMP2004TK-7
- Part Number:
- DMP2004TK-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2481908-DMP2004TK-7
- Description:
- MOSFET P-CH 20V 0.43A SOT-523
- Datasheet:
- DMP2004TK-7
Diodes Incorporated DMP2004TK-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP2004TK-7.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-523
- Number of Pins3
- Weight2.012816mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance1.1Ohm
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max150mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation150mW
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.1 Ω @ 430mA, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds175pF @ 16V
- Current - Continuous Drain (Id) @ 25°C430mA Ta
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±8V
- Continuous Drain Current (ID)430mA
- Gate to Source Voltage (Vgs)8V
- DS Breakdown Voltage-Min20V
- Feedback Cap-Max (Crss)20 pF
- Height750μm
- Length1.6mm
- Width800μm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMP2004TK-7 Overview
A device's maximal input capacitance is 175pF @ 16V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 430mA, which represents the maximum continuous current it can conduct.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 20V.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (1.8V 4.5V).
DMP2004TK-7 Features
a continuous drain current (ID) of 430mA
a 20V drain to source voltage (Vdss)
DMP2004TK-7 Applications
There are a lot of Diodes Incorporated
DMP2004TK-7 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 175pF @ 16V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 430mA, which represents the maximum continuous current it can conduct.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 20V.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (1.8V 4.5V).
DMP2004TK-7 Features
a continuous drain current (ID) of 430mA
a 20V drain to source voltage (Vdss)
DMP2004TK-7 Applications
There are a lot of Diodes Incorporated
DMP2004TK-7 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
DMP2004TK-7 More Descriptions
P-Channel 20 V 1.1 Ohm SMT Enhancement Mode Mosfet - SOT-523
Trans MOSFET P-CH 20V 0.43A Automotive 3-Pin SOT-523 T/R
Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:430Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; Power Dissipation:230Mw; No. Of Pins:3Pins Rohs Compliant: Yes |Diodes Inc. DMP2004TK-7.
Trans MOSFET P-CH 20V 0.43A Automotive 3-Pin SOT-523 T/R
Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:430Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; Power Dissipation:230Mw; No. Of Pins:3Pins Rohs Compliant: Yes |Diodes Inc. DMP2004TK-7.
The three parts on the right have similar specifications to DMP2004TK-7.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Gate to Source Voltage (Vgs)DS Breakdown Voltage-MinFeedback Cap-Max (Crss)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureGate Charge (Qg) (Max) @ VgsInput CapacitanceRds On MaxJESD-30 CodeCase ConnectionTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeDrain to Source Breakdown VoltageSeriesView Compare
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DMP2004TK-714 WeeksSurface MountSurface MountSOT-52332.012816mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3yesActive1 (Unlimited)3EAR991.1OhmMatte Tin (Sn)HIGH RELIABILITYOther TransistorsMOSFET (Metal Oxide)DUALGULL WING26040311150mW TaSingleENHANCEMENT MODE150mWP-ChannelSWITCHING1.1 Ω @ 430mA, 4.5V1V @ 250μA175pF @ 16V430mA Ta20V1.8V 4.5V±8V430mA8V20V20 pF750μm1.6mm800μmNo SVHCNoROHS3 CompliantLead Free---------------
-
17 WeeksSurface MountSurface Mount8-PowerVDFN8---55°C~150°C TJTape & Reel (TR)2007--Active1 (Unlimited)------MOSFET (Metal Oxide)-------2.3W Ta---P-Channel-5.5mOhm @ 15A, 10V1.3V @ 250μA4621pF @ 10V18A Ta 40A Tc20V2.5V 10V±12V40A--------ROHS3 Compliant-PowerDI3333-8150°C-55°C85nC @ 10V4.621nF5.5 mΩ--------
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19 WeeksSurface MountSurface Mount8-PowerVDFN872.007789mgSILICON-55°C~150°C TJTape & Reel (TR)2014e3yesActive1 (Unlimited)5EAR99-Matte Tin (Sn)-Other TransistorsMOSFET (Metal Oxide)DUALNO LEAD26040-112.4W Ta 41W TcSingleENHANCEMENT MODE-P-ChannelSWITCHING8m Ω @ 12A, 4.5V1V @ 250μA6909pF @ 10V14A Ta 54A Tc20V1.5V 4.5V±8V54A8V--850μm3.35mm3.35mmNo SVHC-ROHS3 CompliantLead Free---72nC @ 4.5V--S-PDSO-N5DRAIN22 ns33ns124 ns291 ns-20V-
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17 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)2016e3-Active1 (Unlimited)-EAR99-Matte Tin (Sn)--MOSFET (Metal Oxide)--NOT SPECIFIEDNOT SPECIFIED---780mW Ta---P-Channel-90m Ω @ 3.5A, 4.5V1.25V @ 250μA303pF @ 10V3.1A Ta20V2.5V 4.5V±12V3.1A--------ROHS3 Compliant----7.8nC @ 10V---------Automotive, AEC-Q101
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