Diodes Incorporated DMN5L06VK-7

Name: DMN5L06VK-7
Brand: Diodes Incorporated
SKU: 2473259-DMN5L06VK-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMN5L06VK-7

Manufacturer:: Diodes Incorporated

Ventron No:: 2473259-DMN5L06VK-7

Description:: MOSFET 2N-CH 50V 0.28A SOT-563

ECAD Model:

Datasheet:: DMN5/L06VK,VAK/010VAK

Specifications

Diodes Incorporated DMN5L06VK-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN5L06VK-7.

Factory Lead Time
19 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Number of Pins
6
Weight
3.005049mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Resistance
2Ohm
Subcategory
FET General Purpose Powers
Voltage - Rated DC
50V
Max Power Dissipation
250mW
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
280mA
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
DMN5L06VK
Pin Count
6
Qualification Status
Not Qualified
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
250mW
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2 Ω @ 50mA, 5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 25V
Continuous Drain Current (ID)
280mA
Threshold Voltage
1V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
50V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Feedback Cap-Max (Crss)
5 pF
Height
600μm
Length
1.6mm
Width
1.2mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DMN5L06VK-7 Description
A small signal MOSFET transistor from Diodes Incorporated, model number DMN5L06VK-7, is made for a variety of low voltage, low power applications. The DMN5L06VK-7 is a small and simple-to-use device that offers great efficiency and low power loss thanks to its low threshold voltage and low on-resistance. The transistor can be used in a number of applications where space is limited because it is housed in a SOT-23 surface mount package. The DMN5L06VK-7 is ideal for use in ecologically friendly goods because it complies with RoHS regulations and is devoid of hazardous materials. The transistor is perfect for use in power management applications including DC-DC converters, voltage regulators, and motor control circuits because it has a quick switching speed and a low gate charge.

DMN5L06VK-7 Features
Low gate charge
RoHS compliant
Small form factor
Low on-resistance
Fast switching speed
Low threshold voltage
Low input capacitance

DMN5L06VK-7 Applications
LED lighting
Motor control
Audio amplifiers
DC-DC converters
Voltage regulators
Battery management

DMN5L06VK-7 More Descriptions

Transistor MOSFET Array Dual N-CH 50V 280mA 6-Pin SOT-563 T/RAvnet Japan
MOSFET 2N-CH 50V 0.28A SOT-563 / Trans MOSFET N-CH 50V 0.28A 6-Pin SOT-563 T/R
DMN5L06VK Series 50 V 2 Ohm Dual N-Channel Enhancement Mode Mosfet - SOT-563
MOSFET, AEC-Q101, DUAL N-CH, 50V, SOT563; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 280mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 2ohm; Rds(on) Tes; Available until stocks are exhausted
Transistor Polarity:n Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:280Ma; On Resistance Rds(On):2Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:1V; No. Of Pins:6Pins Rohs Compliant: No

Certification