Diodes Incorporated DMG9N65CTI
- Part Number:
- DMG9N65CTI
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2485056-DMG9N65CTI
- Description:
- MOSFET N CH 650V 9A ITO-220AB
- Datasheet:
- DMG9N65CTI
Diodes Incorporated DMG9N65CTI technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG9N65CTI.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack, Isolated Tab
- Number of Pins3
- Weight2.299997g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2012
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max13W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Turn On Delay Time39 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.3 Ω @ 4.5A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2310pF @ 25V
- Current - Continuous Drain (Id) @ 25°C9A Tc
- Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
- Rise Time29ns
- Drain to Source Voltage (Vdss)650V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)28 ns
- Turn-Off Delay Time122 ns
- Continuous Drain Current (ID)9A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)30V
- Drain Current-Max (Abs) (ID)9A
- DS Breakdown Voltage-Min650V
- Height16.07mm
- Length16.07mm
- Width4.9mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
DMG9N65CTI Overview
A device's maximal input capacitance is 2310pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 9A, which represents the maximum continuous current it can conduct.In this device, the drain current is 9A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 122 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 39 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 650V.This transistor requires a 650V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
DMG9N65CTI Features
a continuous drain current (ID) of 9A
the turn-off delay time is 122 ns
a 650V drain to source voltage (Vdss)
DMG9N65CTI Applications
There are a lot of Diodes Incorporated
DMG9N65CTI applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 2310pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 9A, which represents the maximum continuous current it can conduct.In this device, the drain current is 9A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 122 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 39 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 650V.This transistor requires a 650V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
DMG9N65CTI Features
a continuous drain current (ID) of 9A
the turn-off delay time is 122 ns
a 650V drain to source voltage (Vdss)
DMG9N65CTI Applications
There are a lot of Diodes Incorporated
DMG9N65CTI applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
DMG9N65CTI More Descriptions
Trans MOSFET N-CH 650V 9A Automotive 3-Pin(3 Tab) ITO-220AB Tube
MOSFET N-channel 650V 9A TO-220F | Diodes Inc DMG9N65CTI
MOSFET N-CH 650V 9A ITO220AB
MOSFET N-channel 650V 9A TO-220F | Diodes Inc DMG9N65CTI
MOSFET N-CH 650V 9A ITO220AB
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