Diodes Incorporated DMG9N65CTI

DMG9N65CTI Overview
A device's maximal input capacitance is 2310pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 9A, which represents the maximum continuous current it can conduct.In this device, the drain current is 9A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 122 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 39 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 650V.This transistor requires a 650V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

DMG9N65CTI Features
a continuous drain current (ID) of 9A
the turn-off delay time is 122 ns
a 650V drain to source voltage (Vdss)


DMG9N65CTI Applications
There are a lot of Diodes Incorporated
DMG9N65CTI applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples