Diodes Incorporated DMG1016V-7

Name: DMG1016V-7
Brand: Diodes Incorporated
SKU: 2473238-DMG1016V-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMG1016V-7

Manufacturer:: Diodes Incorporated

Ventron No:: 2473238-DMG1016V-7

Description:: MOSFET N/P-CH 20V SOT563

ECAD Model:

Datasheet:: DMG1016V-7

Specifications

Diodes Incorporated DMG1016V-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG1016V-7.

Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Number of Pins
6
Weight
3.005049mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Resistance
700mOhm
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Max Power Dissipation
530mW
Terminal Position
DUAL
Terminal Form
FLAT
Base Part Number
DMG1016V
Pin Count
6
Reference Standard
AEC-Q101
Number of Elements
2
Operating Mode
ENHANCEMENT MODE
Power Dissipation
530mW
Turn On Delay Time
5.1 ns
FET Type
N and P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
400m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
60.67pF @ 16V
Current - Continuous Drain (Id) @ 25°C
870mA 640mA
Gate Charge (Qg) (Max) @ Vgs
0.74nC @ 4.5V
Rise Time
8.1ns
Drain to Source Voltage (Vdss)
20V
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Fall Time (Typ)
20.7 ns
Turn-Off Delay Time
28.4 ns
Continuous Drain Current (ID)
640mA
Threshold Voltage
1V
Gate to Source Voltage (Vgs)
6V
Drain Current-Max (Abs) (ID)
0.87A
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Height
600μm
Length
1.7mm
Width
1.25mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DMG1016V-7 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMG1016V-7 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMG1016V-7. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

DMG1016V-7 More Descriptions

Trans MOSFET N/P-CH 20V 0.87A/0.64A Automotive 6-Pin SOT-563 T/R
MOSFET, N & P CH, 20V/-20V, SOT-563; Transistor Polarity: N and P Complement; Continuous Drain Current Id: 870mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 530mW; Transistor Case Style: SOT-563; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Small Signal Field-Effect Transistor, 0.87A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

Product Comparison

The three parts on the right have similar specifications to DMG1016V-7.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Additional Feature

Max Power Dissipation

Terminal Position

Terminal Form

Base Part Number

Pin Count

Reference Standard

Number of Elements

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Polarity/Channel Type

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

FET Technology

FET Feature

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Subcategory

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Element Configuration

Drain to Source Breakdown Voltage

Surface Mount

Series

JESD-30 Code

Configuration

Power - Max

DS Breakdown Voltage-Min

View Compare
DMG1016V-7

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

SOT-563, SOT-666

6

3.005049mg

SILICON

-55°C~150°C TJ

Cut Tape (CT)

2009

e3

yes

Active

1 (Unlimited)

6

EAR99

700mOhm

Matte Tin (Sn)

HIGH RELIABILITY

530mW

DUAL

FLAT

DMG1016V

6

AEC-Q101

2

ENHANCEMENT MODE

530mW

5.1 ns

N and P-Channel

SWITCHING

400m Ω @ 600mA, 4.5V

1V @ 250μA

60.67pF @ 16V

870mA 640mA

0.74nC @ 4.5V

8.1ns

20V

N-CHANNEL AND P-CHANNEL

20.7 ns

28.4 ns

640mA

1V

6V

0.87A

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

600μm

1.7mm

1.25mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-
DMG1026UV-7

Diodes Incorporated

16 Weeks

Surface Mount

Surface Mount

SOT-563, SOT-666

6

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2012

e3

yes

Active

1 (Unlimited)

6

EAR99

-

Matte Tin (Sn)

HIGH RELIABILITY

580mW

-

FLAT

DMG1026

6

-

2

ENHANCEMENT MODE

6.5W

3.4 ns

2 N-Channel (Dual)

SWITCHING

1.8 Ω @ 500mA, 10V

1.8V @ 250μA

32pF @ 25V

-

0.45nC @ 10V

3.4ns

60V

-

16.3 ns

26.4 ns

410mA

-

20V

0.38A

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

600μm

1.7mm

1.25mm

No SVHC

No

ROHS3 Compliant

Lead Free

FET General Purpose Power

260

40

Dual

-

-

-

-

-

-

-

DMG1016V-7 vs DMG1026UV-7
DMG1023UV-7

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

SOT-563, SOT-666

6

3.005049mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2012

e3

yes

Active

1 (Unlimited)

6

EAR99

750mOhm

Matte Tin (Sn)

ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD

530mW

-

FLAT

DMG1023UV

6

-

2

ENHANCEMENT MODE

530mW

5.1 ns

2 P-Channel (Dual)

SWITCHING

750m Ω @ 430mA, 4.5V

1V @ 250μA

59.76pF @ 16V

-

0.62nC @ 4.5V

8.1ns

20V

-

20.7 ns

28.4 ns

1.03A

-1V

6V

-

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

600μm

1.7mm

1.25mm

No SVHC

No

ROHS3 Compliant

Lead Free

Other Transistors

260

-

Dual

-20V

-

-

-

-

-

-

DMG1016V-7 vs DMG1023UV-7
DMG1026UVQ-7

Diodes Incorporated

16 Weeks

-

Surface Mount

SOT-563, SOT-666

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

e3

-

Active

1 (Unlimited)

6

EAR99

-

Matte Tin (Sn)

HIGH RELIABILITY

-

-

FLAT

-

-

-

2

ENHANCEMENT MODE

-

-

2 N-Channel (Dual)

SWITCHING

1.8 Ω @ 500mA, 10V

1.8V @ 250μA

32pF @ 25V

440mA Ta

0.45pC @ 4.5V

-

60V

-

-

-

-

-

-

0.38A

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

-

-

-

-

-

ROHS3 Compliant

-

-

NOT SPECIFIED

NOT SPECIFIED

-

-

YES

Automotive, AEC-Q101

R-PDSO-F6

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

650mW

60V

DMG1016V-7 vs DMG1026UVQ-7