ON Semiconductor DBD10G-E
- Part Number:
- DBD10G-E
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2412431-DBD10G-E
- Description:
- DIODE BRIDGE 1PH 1A 600V 4DIP
- Datasheet:
- DBD10G
ON Semiconductor DBD10G-E technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor DBD10G-E.
- Mounting TypeThrough Hole
- Package / Case4-DIP (0.300, 7.62mm)
- Operating Temperature150°C TJ
- PackagingTape & Box (TB)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyStandard
- Diode TypeSingle Phase
- Current - Reverse Leakage @ Vr10μA @ 600V
- Voltage - Forward (Vf) (Max) @ If1.05V @ 500mA
- Current - Average Rectified (Io)1A
- Voltage - Peak Reverse (Max)600V
- RoHS StatusROHS3 Compliant
DBD10G-E Overview
Basically, rectifier is a type of electronic component that is available in a 4-DIP (0.300, 7.62mm) package.Operating at the temperature of 150°C TJ ensures its normal operation.
DBD10G-E Features
4-DIP (0.300, 7.62mm) package
operating at a temperature of 150°C TJ
DBD10G-E Applications
There are a lot of Rochester Electronics, LLC
DBD10G-E applications of bridge rectifiers.
Controlled avalanche characteristics
Working peak reverse voltages 200 to 1 ,000 volts
Military and other high-reliability applications
High forward surge current capability
Low thermal resistance
Extremely robust construction
Fuse-in-glass diodes design
Electrically isolated aluminum case
Motor controls – Low Voltage and Medium Voltage converters
SCR power bridges for solid state starters
Basically, rectifier is a type of electronic component that is available in a 4-DIP (0.300, 7.62mm) package.Operating at the temperature of 150°C TJ ensures its normal operation.
DBD10G-E Features
4-DIP (0.300, 7.62mm) package
operating at a temperature of 150°C TJ
DBD10G-E Applications
There are a lot of Rochester Electronics, LLC
DBD10G-E applications of bridge rectifiers.
Controlled avalanche characteristics
Working peak reverse voltages 200 to 1 ,000 volts
Military and other high-reliability applications
High forward surge current capability
Low thermal resistance
Extremely robust construction
Fuse-in-glass diodes design
Electrically isolated aluminum case
Motor controls – Low Voltage and Medium Voltage converters
SCR power bridges for solid state starters
DBD10G-E More Descriptions
Rectifier Bridge Diode Single 600V 1A 4-Pin Fan-Fold
Bridge Rectifier Diode, 1A, 600V V(RRM), Silicon
1.0 A Single-Phase Bridge Rectifier
Tape & Box (TB) Through Hole Single Phase Standard Bridge Rectifier 1.05V @ 500mA 1A 600V 150C TJ
DBD10G-E, STANDARD RECOVERY RECTIFIERS;
BRIDGE RECT 1P 600V 800MA 4SMD
Bridge Rectifier Diode, 1A, 600V V(RRM), Silicon
1.0 A Single-Phase Bridge Rectifier
Tape & Box (TB) Through Hole Single Phase Standard Bridge Rectifier 1.05V @ 500mA 1A 600V 150C TJ
DBD10G-E, STANDARD RECOVERY RECTIFIERS;
BRIDGE RECT 1P 600V 800MA 4SMD
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