DB101G

GeneSiC Semiconductor DB101G

Part Number:
DB101G
Manufacturer:
GeneSiC Semiconductor
Ventron No:
2410912-DB101G
Description:
DIODE BRIDGE 50V 1A DB
ECAD Model:
Datasheet:
DB101G

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Specifications
GeneSiC Semiconductor DB101G technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor DB101G.
  • Lifecycle Status
    PRODUCTION (Last Updated: 6 months ago)
  • Factory Lead Time
    4 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    4-EDIP (0.321, 8.15mm)
  • Surface Mount
    NO
  • Number of Pins
    4
  • Diode Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • Published
    2010
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Technology
    Standard
  • Terminal Position
    DUAL
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Number of Elements
    4
  • Diode Type
    Single Phase
  • Current - Reverse Leakage @ Vr
    5μA @ 50V
  • Cable Length
    4.5m
  • Voltage - Forward (Vf) (Max) @ If
    1.1V @ 1A
  • Wire/Cable Gauge
    32 AWG
  • Forward Current
    1A
  • Max Reverse Leakage Current
    5μA
  • Max Surge Current
    30A
  • Output Current-Max
    1A
  • Number of Phases
    1
  • Peak Reverse Current
    5A
  • Max Repetitive Reverse Voltage (Vrrm)
    50V
  • Voltage - Peak Reverse (Max)
    50V
  • RoHS Status
    RoHS Compliant
Description
DB101G Overview
There is no forward voltage applied to this device.A 4-EDIP (0.321, 8.15mm) package electronic component is basically a type of electronic component.The reverse leakage current must be monitored and should not exceed 0 volts.Keeping the temperature at -55°C~150°C TJ ensures normal operation.Its maximum output voltage is 1A.Current surges should be monitored and not exceeded.Powering this device requires a peak reverse voltage of 5A.

DB101G Features
1A forward voltage
forward voltage of 1A
4-EDIP (0.321, 8.15mm) package
operating at a temperature of -55°C~150°C TJ
the maximum output voltage of 1A
peak reverse voltage of 5A
a reverse voltage peak of 5A


DB101G Applications
There are a lot of GeneSiC Semiconductor
DB101G applications of bridge rectifiers.


High forward surge current capability
Low thermal resistance
Extremely robust construction
Fuse-in-glass diodes design
Electrically isolated aluminum case
Motor controls – Low Voltage and Medium Voltage converters
SCR power bridges for solid state starters
SCR and diode based input rectifiers
Crowbar systems for motor drives
Wind power (alternative energy) – Converters available as diodes, SCRs or IGBTs
DB101G More Descriptions
50V 1A DB Single Phase Bridge Rectifier
Bridge Rectifiers SI BRIDGE RECT DB-PK 50-1000V 1A 50P/35R
Bridge Rectifier, 50V, 1A, Db; No. Of Phases:Single Phase; Repetitive Peak Reverse Voltage:50V; Average Forward Current:1A; Bridge Rectifier Case Style:Dip; No. Of Pins:4Pins; Forward Voltage Max:1.1V; Forward Surge Current:30A Rohs Compliant: Yes |Genesic Semiconductor DB101G
Product Comparison
The three parts on the right have similar specifications to DB101G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Diode Element Material
    Operating Temperature
    Packaging
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Number of Elements
    Diode Type
    Current - Reverse Leakage @ Vr
    Cable Length
    Voltage - Forward (Vf) (Max) @ If
    Wire/Cable Gauge
    Forward Current
    Max Reverse Leakage Current
    Max Surge Current
    Output Current-Max
    Number of Phases
    Peak Reverse Current
    Max Repetitive Reverse Voltage (Vrrm)
    Voltage - Peak Reverse (Max)
    RoHS Status
    Current - Average Rectified (Io)
    Supplier Device Package
    View Compare
  • DB101G
    DB101G
    PRODUCTION (Last Updated: 6 months ago)
    4 Weeks
    Through Hole
    4-EDIP (0.321, 8.15mm)
    NO
    4
    SILICON
    -55°C~150°C TJ
    Bulk
    2010
    yes
    Active
    1 (Unlimited)
    4
    EAR99
    Standard
    DUAL
    NOT SPECIFIED
    NOT SPECIFIED
    4
    Single Phase
    5μA @ 50V
    4.5m
    1.1V @ 1A
    32 AWG
    1A
    5μA
    30A
    1A
    1
    5A
    50V
    50V
    RoHS Compliant
    -
    -
    -
  • DB103STR
    -
    6 Weeks
    Surface Mount
    4-SMD, Gull Wing
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2016
    -
    Active
    1 (Unlimited)
    -
    -
    Standard
    -
    -
    -
    -
    Single Phase
    5μA @ 200V
    -
    1.1V @ 1A
    -
    -
    -
    -
    -
    -
    -
    -
    200V
    ROHS3 Compliant
    1A
    -
  • DB103TB
    -
    6 Weeks
    Through Hole
    4-EDIP (0.321, 8.15mm)
    -
    -
    -
    -55°C~150°C TJ
    Tube
    2017
    -
    Active
    1 (Unlimited)
    -
    -
    Standard
    -
    -
    -
    -
    Single Phase
    5μA @ 200V
    -
    1.1V @ 1A
    -
    -
    -
    -
    -
    -
    -
    -
    200V
    ROHS3 Compliant
    1A
    DB-M
  • DB101STR
    -
    6 Weeks
    Surface Mount
    4-SMD, Gull Wing
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2016
    -
    Active
    1 (Unlimited)
    -
    -
    Standard
    -
    -
    -
    -
    Single Phase
    5μA @ 50V
    -
    1.1V @ 1A
    -
    -
    -
    -
    -
    -
    -
    -
    50V
    ROHS3 Compliant
    1A
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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