GeneSiC Semiconductor DB101G
- Part Number:
- DB101G
- Manufacturer:
- GeneSiC Semiconductor
- Ventron No:
- 2410912-DB101G
- Description:
- DIODE BRIDGE 50V 1A DB
- Datasheet:
- DB101G
GeneSiC Semiconductor DB101G technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor DB101G.
- Lifecycle StatusPRODUCTION (Last Updated: 6 months ago)
- Factory Lead Time4 Weeks
- Mounting TypeThrough Hole
- Package / Case4-EDIP (0.321, 8.15mm)
- Surface MountNO
- Number of Pins4
- Diode Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2010
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- TechnologyStandard
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Number of Elements4
- Diode TypeSingle Phase
- Current - Reverse Leakage @ Vr5μA @ 50V
- Cable Length4.5m
- Voltage - Forward (Vf) (Max) @ If1.1V @ 1A
- Wire/Cable Gauge32 AWG
- Forward Current1A
- Max Reverse Leakage Current5μA
- Max Surge Current30A
- Output Current-Max1A
- Number of Phases1
- Peak Reverse Current5A
- Max Repetitive Reverse Voltage (Vrrm)50V
- Voltage - Peak Reverse (Max)50V
- RoHS StatusRoHS Compliant
DB101G Overview
There is no forward voltage applied to this device.A 4-EDIP (0.321, 8.15mm) package electronic component is basically a type of electronic component.The reverse leakage current must be monitored and should not exceed 0 volts.Keeping the temperature at -55°C~150°C TJ ensures normal operation.Its maximum output voltage is 1A.Current surges should be monitored and not exceeded.Powering this device requires a peak reverse voltage of 5A.
DB101G Features
1A forward voltage
forward voltage of 1A
4-EDIP (0.321, 8.15mm) package
operating at a temperature of -55°C~150°C TJ
the maximum output voltage of 1A
peak reverse voltage of 5A
a reverse voltage peak of 5A
DB101G Applications
There are a lot of GeneSiC Semiconductor
DB101G applications of bridge rectifiers.
High forward surge current capability
Low thermal resistance
Extremely robust construction
Fuse-in-glass diodes design
Electrically isolated aluminum case
Motor controls – Low Voltage and Medium Voltage converters
SCR power bridges for solid state starters
SCR and diode based input rectifiers
Crowbar systems for motor drives
Wind power (alternative energy) – Converters available as diodes, SCRs or IGBTs
There is no forward voltage applied to this device.A 4-EDIP (0.321, 8.15mm) package electronic component is basically a type of electronic component.The reverse leakage current must be monitored and should not exceed 0 volts.Keeping the temperature at -55°C~150°C TJ ensures normal operation.Its maximum output voltage is 1A.Current surges should be monitored and not exceeded.Powering this device requires a peak reverse voltage of 5A.
DB101G Features
1A forward voltage
forward voltage of 1A
4-EDIP (0.321, 8.15mm) package
operating at a temperature of -55°C~150°C TJ
the maximum output voltage of 1A
peak reverse voltage of 5A
a reverse voltage peak of 5A
DB101G Applications
There are a lot of GeneSiC Semiconductor
DB101G applications of bridge rectifiers.
High forward surge current capability
Low thermal resistance
Extremely robust construction
Fuse-in-glass diodes design
Electrically isolated aluminum case
Motor controls – Low Voltage and Medium Voltage converters
SCR power bridges for solid state starters
SCR and diode based input rectifiers
Crowbar systems for motor drives
Wind power (alternative energy) – Converters available as diodes, SCRs or IGBTs
DB101G More Descriptions
50V 1A DB Single Phase Bridge Rectifier
Bridge Rectifiers SI BRIDGE RECT DB-PK 50-1000V 1A 50P/35R
Bridge Rectifier, 50V, 1A, Db; No. Of Phases:Single Phase; Repetitive Peak Reverse Voltage:50V; Average Forward Current:1A; Bridge Rectifier Case Style:Dip; No. Of Pins:4Pins; Forward Voltage Max:1.1V; Forward Surge Current:30A Rohs Compliant: Yes |Genesic Semiconductor DB101G
Bridge Rectifiers SI BRIDGE RECT DB-PK 50-1000V 1A 50P/35R
Bridge Rectifier, 50V, 1A, Db; No. Of Phases:Single Phase; Repetitive Peak Reverse Voltage:50V; Average Forward Current:1A; Bridge Rectifier Case Style:Dip; No. Of Pins:4Pins; Forward Voltage Max:1.1V; Forward Surge Current:30A Rohs Compliant: Yes |Genesic Semiconductor DB101G
The three parts on the right have similar specifications to DB101G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsDiode Element MaterialOperating TemperaturePackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsDiode TypeCurrent - Reverse Leakage @ VrCable LengthVoltage - Forward (Vf) (Max) @ IfWire/Cable GaugeForward CurrentMax Reverse Leakage CurrentMax Surge CurrentOutput Current-MaxNumber of PhasesPeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)Voltage - Peak Reverse (Max)RoHS StatusCurrent - Average Rectified (Io)Supplier Device PackageView Compare
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DB101GPRODUCTION (Last Updated: 6 months ago)4 WeeksThrough Hole4-EDIP (0.321, 8.15mm)NO4SILICON-55°C~150°C TJBulk2010yesActive1 (Unlimited)4EAR99StandardDUALNOT SPECIFIEDNOT SPECIFIED4Single Phase5μA @ 50V4.5m1.1V @ 1A32 AWG1A5μA30A1A15A50V50VRoHS Compliant---
-
-6 WeeksSurface Mount4-SMD, Gull Wing----55°C~150°C TJTape & Reel (TR)2016-Active1 (Unlimited)--Standard----Single Phase5μA @ 200V-1.1V @ 1A--------200VROHS3 Compliant1A-
-
-6 WeeksThrough Hole4-EDIP (0.321, 8.15mm)----55°C~150°C TJTube2017-Active1 (Unlimited)--Standard----Single Phase5μA @ 200V-1.1V @ 1A--------200VROHS3 Compliant1ADB-M
-
-6 WeeksSurface Mount4-SMD, Gull Wing----55°C~150°C TJTape & Reel (TR)2016-Active1 (Unlimited)--Standard----Single Phase5μA @ 50V-1.1V @ 1A--------50VROHS3 Compliant1A-
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